Three-dimensional tapered nano-layer film structure, preparation method thereof and application thereof

A technology of nano-layer and film structure, applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problem of low net radiation cooling power, achieve high-efficiency passive radiation cooling, high performance Effect of double window atmospheric radiation

Pending Publication Date: 2019-06-28
SHENZHEN UNIV
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Problems solved by technology

[0007] In view of this, the present invention provides a three-dimensional conical nano-layer film structure, preparation method and applica

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  • Three-dimensional tapered nano-layer film structure, preparation method thereof and application thereof

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Embodiment Construction

[0025] The embodiment of the present invention provides a three-dimensional tapered nano-layer film structure, a preparation method and its application, which are used to solve the technical defect of low net radiation cooling power in the daytime cooling method in the prior art.

[0026] The technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0027] In order to describe the present invention in more detail, a three-dimensional tapered nano-layer film structure, preparation method and application provided by the present invention will be specifically described below in conjunction with examples....

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Abstract

The invention belongs to the field of novel energy technical development, in particular to a three-dimensional tapered nano-layer film structure, a preparation method thereof and application thereof.The three-dimensional tapered nano-layer film structure provided by the invention comprises silicon dioxide layer-hafnium dioxide composite layers and sliver layers, wherein silicon dioxide layers arearranged above hafnium dioxide layers; number of the silicon dioxide layer-hafnium dioxide composite layers is greater than 10; and the silicon dioxide layer-hafnium dioxide composite layers are arranged above the sliver layers. The invention further provides a preparation method for the three-dimensional tapered nano-layer film structure, and further provides application of the three-dimensionaltapered nano-layer film structure or a product prepared by the preparation method in a radiation cooling device. The three-dimensional tapered nano-layer film structure is introduced, so that high-performance dual-window atmospheric radiation can be realized, and high-efficiency passive radiation cooling ability can be finally realized. The technical defect that a daytime cooling method has low net radiation cooling power in the prior art is solved.

Description

technical field [0001] The invention belongs to the field of new energy technology development, and in particular relates to a three-dimensional tapered nano-layer film structure, a preparation method and an application thereof. Background technique [0002] Energy crisis and environmental pollution are two major problems facing the world today. It is an urgent task to research and develop new energy sources, new methods and new technologies with low pollution and low energy consumption. According to the principles of thermodynamics, natural large-capacity cold sources can also be used as energy. For example, icebergs at the two poles of the earth and water under the deep sea are such cold sources, but their use is limited by objective conditions or the cost is too high. In the absence of a medium, two objects with a temperature difference can exchange energy in the form of radiation, and eventually the temperatures of the two objects are equal. The huge volume of space in ...

Claims

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Application Information

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IPC IPC(8): C23C14/30C23C14/58C23C14/16C23C14/08C23C14/10B82Y40/00B82Y30/00F25B23/00
Inventor 蔡博渊孔阿茹石鹏刘民航褚宪薇袁小聪
Owner SHENZHEN UNIV
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