A method and system for micro-nano electrical discharge machining of micro-three-dimensional structures

An electrical discharge machining, three-dimensional structure technology, applied in microstructure technology, microstructure device, nanostructure manufacturing, etc., can solve the problems of shrinking microstructure size and difficult chip removal, and achieve the solution of chip removal problem and enrich technical methods. Effect

Inactive Publication Date: 2012-02-15
TIANJIN UNIV
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the same time, because the size of the processed structure is too small, it is difficult to remove chips by using external flushing, which makes the problem of chip removal more prominent in the EDM process, thus restricting the further reduction of the size of the microstructure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method and system for micro-nano electrical discharge machining of micro-three-dimensional structures
  • A method and system for micro-nano electrical discharge machining of micro-three-dimensional structures
  • A method and system for micro-nano electrical discharge machining of micro-three-dimensional structures

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The present invention uses nanowires and nanotubes as electrodes for nano-discharge processing to process micron and nanoscale complex three-dimensional structures, and the nanowires and nanotubes used as electrodes need to meet the following conditions:

[0021] Nanowires and nanotubes need to have good electrical and thermal conductivity and mechanical properties. For example, the melting point of carbon nanotubes is the highest among known materials at present, and it is not easy to be corroded by heat in electric discharge machining; secondly, the molecular structure of carbon nanotubes is stable and has high thermal stability; thirdly, the structure of carbon nanotubes It has the same sheet structure as graphite, so it has good electrical properties. At the same time, carbon nanotubes have high heat exchange along the tube axis, which is good for heat dissipation during processing; finally, carbon nanotubes have good mechanical properties, and their tensile strength...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
tensile strengthaaaaaaaaaa
Login to view more

Abstract

The invention belongs to the technical field of micro-nano manufacturing, and relates to a method for micro-nano electric discharge machining of a micro-three-dimensional structure: (1) fixing conductive nanowires or nanotubes on probe tips made of conductive materials as electrodes; (2) ) place the electrode clamping device on the displacement platform, and control the movement of the displacement platform through the multi-axis motion controller; (3) place the conductive material workpiece on the X / Y precision displacement platform, and use the multi-axis motion controller to control the movement of the displacement platform; Control the movement of the X / Y precision translation stage; (4) Connect the negative pole of the pulse power supply to the probe, and its positive pole to the workpiece; (5) Use the industrial computer to send instructions to the multi-axis motion control card to control the placement of electrodes The displacement table of the clamping device is provided with the working voltage of the discharge machining by the pulse power supply, and the discharge gap voltage is collected by the gap voltage detection device, and the industrial computer controls the movement of the electrode feeding displacement table according to the gap voltage. The invention enables the size of electric discharge machining to reach micron and nanometer levels, and simultaneously solves the chip removal problem in the machining process.

Description

technical field [0001] The invention belongs to the technical field of micro-nano manufacturing, and relates to a method and system for electric discharge machining of a micro-nano three-dimensional structure. Background technique [0002] As one of the special processing technologies, electrical discharge machining has been widely used in industry. With the miniaturization of products, the research on processing technology and methods of micro-nano three-dimensional structure has become one of the main topics in the field of manufacturing. According to different processing principles, the processing of micro-nano three-dimensional structures can be divided into two categories: traditional mechanical processing and special processing. In traditional mechanical processing, due to the existence of macroscopic cutting force, there are phenomena such as stress and heat in the processing process. In micro- and nano-scale processing, it is difficult to control the processing accu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): B82B3/00B81C5/00B81C1/00B81C3/00
Inventor 房丰洲徐宗伟王庆袆胡小唐
Owner TIANJIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap