Special fixture applied to aluminum thick film resistivity method vacuum evaporation device

A special fixture and resistance method technology, used in vacuum evaporation coating, sputtering coating, ion implantation coating and other directions, can solve the problem of low limit thickness of evaporated aluminum film, and achieve the effect of improving the limit thickness

Pending Publication Date: 2019-04-09
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It is to solve the problem that the limit thickness of the evaporated aluminum film of ordinary evaporation equipment is relatively low, only a few hundred nanometer scale. In the case of the size of the chamber, increase the hanging amount of the aluminum ring of the evaporation source, thereby increasing the thickness of a single evaporation, realizing the production of micron-scale films, and achieving the purpose of vacuum evaporation aluminum thick film

Method used

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  • Special fixture applied to aluminum thick film resistivity method vacuum evaporation device
  • Special fixture applied to aluminum thick film resistivity method vacuum evaporation device
  • Special fixture applied to aluminum thick film resistivity method vacuum evaporation device

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Embodiment Construction

[0017] The specific implementation manners of the present invention will be further described below in conjunction with the accompanying drawings and technical solutions.

[0018] A special fixture used in resistance method vacuum evaporation aluminum thick film equipment, the special fixture has a left-right symmetrical structure, including a left fixture 1, a left electrode 3, a first tungsten wire cover plate 6, a first tungsten wire 7, a second Tungsten wire 8, aluminum ring 9, second tungsten wire cover plate 10, right electrode 13 and right clamp 14;

[0019] The left clamp 1 and the right clamp 14 cooperate with the first bolt 2 and the sixth bolt 15 respectively to clamp the left electrode 3 and the right electrode 12; the left clamp 1 and the right clamp 14 have the same structure, and are divided into fixed electrode terminals and Fixed tungsten wire end;

[0020] The first tungsten wire 7 and the second tungsten wire 8 are horizontally fixed between the left fixtur...

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Abstract

The invention belongs to the technical field of micro and nano-fabrication, and provides a special fixture applied to an aluminum thick film resistivity method vacuum evaporation device. The special fixture is of a bilateral symmetry structure and comprises a left clamp, a left electrode, a first tungsten wire cover plate, a first tungsten wire, a second tungsten wire, aluminum rings, a second tungsten wire cover plate, a right electrode and a right clamp; the use amount of used evaporation source aluminum rings is 2.5 times that of aluminum rings before transformation, after the use amount ofthe evaporation source aluminum rings is increased, the limit thickness of one-time evaporation can be increased to the micrometer scale from few hundred nanometers, and through increasing of the useamount of evaporation source aluminum rings, the limit thickness of a coating film is obviously improved; when the transformed clamps and tungsten wires are used for evaporating the aluminum film, the distance between a sample and an evaporation source is increased, the included angle between the sample and the evaporation source is 71.4 degrees, at the time, the single-time aluminum film evaporation limit thickness is the micrometer scale, and the clamp can achieve the aim of evaporating the aluminum thick film.

Description

technical field [0001] The invention relates to a special fixture used in vacuum vapor deposition aluminum thick film equipment by resistance method, which is used for vacuum vapor deposition deposition of metal aluminum thick film, and belongs to the technical field of micro-nano manufacturing. Background technique [0002] Vacuum evaporation aluminum film is a thin film production method based on the principle of physical vapor deposition. It refers to heating the metal to be evaporated to a higher temperature in a vacuum chamber, so that its atoms can obtain high enough energy to break away from the bondage of the surface of the metal material. , the process in which evaporation transfers to the substrate surface and forms a thin film. Vacuum evaporation has the advantages of simple equipment, easy operation, and fast film forming rate. Among them, the resistance heating evaporation is to fix the heating source tungsten wire between the two electrodes by using a fixture,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/50C23C14/26C23C14/14
CPCC23C14/50C23C14/14C23C14/26
Inventor 单庆孙盼单骁罗怡徐征
Owner DALIAN UNIV OF TECH
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