The invention belongs to the technical field of state monitoring of power electronic devices, and discloses a SiC
MOSFET junction temperature online monitoring circuit and method based on a turn-on
delay integrator, and the circuit comprises a
grid voltage detection circuit, a power source
voltage detection circuit, a
comparator circuit, a trigger circuit, an isolation circuit and a high-precision integral holding circuit. The
gate voltage detection circuit measures the
gate voltage of the scaled SiC
MOSFET device and transmits the
gate voltage to the
comparator circuit; the power source
electrode voltage detection circuit measures the scaled SiC
MOSFET device power source
electrode voltage VL in real time, filters the power source
electrode voltage, carries out inverse proportion amplification on the power source electrode voltage through the inverting
amplifier, and transmits the power source electrode voltage to the
comparator circuit; the comparator circuit compares the
grid voltage and the power source voltage with the reference voltage Vref1 of the comparator and the reference voltage Vref2 of the comparator respectively, outputs two pulse comparison signals V1 and V2 respectively, and then transmits the two pulse comparison output signals to the trigger circuit. According to the invention, when a plurality of SiC MOFET chips are connected in parallel, the highest
junction temperature of the chips can be measured, which is more beneficial to
online evaluation of the states of power
electronic equipment and devices.