In the case where measurement / inspection of a
wafer is performed in a measurement / inspection instrument before and after
exposure is performed in an
exposure apparatus, various kinds of conditions of the
exposure apparatus and the measurement / inspection instrument such as environment in the apparatus / instrument, a measurement condition of an alignment
system a measurement condition of an AF
measurement device, a
wafer grid, and image
distortion are made to be matched. In particular, in accordance with a
processing state of the exposure apparatus and a coater developer, a measurement result of a film, and the like, exclusion of a mark for
overlay error measurement, adjustment of the measurement condition and correction of the measurement result, adjustment of the environment, correction of the measurement result according to the environment, and adjustment of pattern defect inspection are performed. Further, in calibration
processing, aberration of a projection optical
system of an exposure apparatus that transfers a pattern on a
wafer for calibration, and the like are also taken into consideration. Accordingly, the yield of device production can be improved.