On-line detection device with function of calibrating systematic error for wave aberration of projection objective of photoetching machine

A technology of projection objective lens and calibration system, which is applied in the field of optical detection, can solve problems such as existing systems and errors, and achieve the effect of improving measurement accuracy

Active Publication Date: 2010-02-24
BEIJING INSTITUTE OF TECHNOLOGYGY
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Problems solved by technology

[0005] The purpose of the present invention is to propose an on-line detection device for the wave aberration of the projection objective lens of a lithography machine that can calibrate the system error in view of the existing PSPDI structure that causes systematic errors in the measurement results.

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  • On-line detection device with function of calibrating systematic error for wave aberration of projection objective of photoetching machine
  • On-line detection device with function of calibrating systematic error for wave aberration of projection objective of photoetching machine
  • On-line detection device with function of calibrating systematic error for wave aberration of projection objective of photoetching machine

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Embodiment Construction

[0046] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0047] Firstly, the structural composition and working principle of the lithography machine are described. The lithography machine includes a light source 101 , an illumination system 102 , a mask plate 103 , a mask workpiece stage 104 , a projection objective lens 105 , a silicon wafer 106 and a silicon wafer workpiece stage 107 . After passing through the illumination system 102, the light emitted by the light source 101 is illuminated on the mask plate 103, and the pattern on the mask plate 103 is projected onto the silicon wafer 106 coated with photoresist in a step-and-scan manner through the projection objective lens 105. Realize pattern transfer. The light source 101 is an extreme ultraviolet light source with a wavelength of about 13.5nm, or an ArF excimer laser with a wavelength of about 193nm, or a KrF excimer laser with a ...

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Abstract

The invention discloses an on-line detection device with the function of calibrating a systematic error for wave aberration of a projection objective of a photoetching machine, belonging to the fieldof optical detection. The device comprises an object space mask plate with circular holes, a phase-shifting device, a photoelectric sensor, a memorizer, a controller, an arithmetic unit, a beam splitting device and an image space mask plate, wherein the beam splitting device comprises two binary diffraction gratings: a first grating and a second grating; and the image space mask plate comprises awindow and a first circular hole and a second circular hole with equal diameters. The second grating of the beam splitting device and the second circular hole of the image space mask plate are used aselements for calibrating the systematic error, and the systematic error of the device is calibrated according to the orthogonal property and the odd-even symmetrical property of the Zernike multinomial in a unit circle. The device of the invention is integrated on a masking workpiece platform and a silicon slice workpiece platform of the photoetching machine, and compared with the prior art, thedevice can calibrate the systematic measurement error introduced by a measuring device, thereby increasing the accuracy of measurement.

Description

technical field [0001] The invention belongs to the field of optical detection, and relates to an online detection device for wave aberration of a projected objective lens of a lithography machine with a system error calibration function, in particular to an online detection device for wave aberration of a projected objective lens of an extreme ultraviolet lithography machine. Background technique [0002] In the preparation process of large-scale integrated circuits, a projection exposure device is often used to reduce and project the pattern on the mask plate on the silicon wafer coated with photoresist through the projection objective lens. The 2007 International Semiconductor Technology Roadmap (ITRS 2007) pointed out that extreme ultraviolet lithography (EUVL) is the most potential candidate technology to achieve 32nm and below technology nodes. EUVL uses an exposure light source with a wavelength of 13.5nm. The refractive index of any material in this wavelength band i...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G01M11/02
Inventor 刘克李艳秋刘丽辉
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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