Method for extracting electron-beam exposure scattering parameter
A technology of electron beam exposure and scattering parameters, which is applied in the field of electron beam exposure, can solve the problems of cumbersome operation and difficulty in ensuring accuracy, and achieve the effect of reducing errors, accurate and simple parameter extraction
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[0050] In this embodiment, taking polymethyl methacrylate PMMA positive electronic resist as an example, the method for extracting scattering parameters of electron beam exposure provided by the present invention is further described with reference to the accompanying drawings.
[0051] Step 201: cleaning and heat-treating the surface of the two-inch silicon wafer substrate;
[0052]In this step, a batch (20 pieces) of new silicon wafers are first rinsed with deionized water, and then placed in a special container filled with concentrated sulfuric acid and heated at about 300°C for 40 minutes. After cooling, the silicon wafers are taken out and deionized Rinse off the water, put it in an oven, bake at 180°C for 2 hours, and wait for the water vapor to evaporate completely.
[0053] Step 202: Spin-coat a PMMA electron beam lithography resist layer on the surface of the Si substrate, perform a pre-baking treatment on a hot plate at 180°C for 2 minutes, let the organic solvent fu...
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