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Method for extracting electron-beam exposure scattering parameter

A technology of electron beam exposure and scattering parameters, which is applied in the field of electron beam exposure, can solve the problems of cumbersome operation and difficulty in ensuring accuracy, and achieve the effect of reducing errors, accurate and simple parameter extraction

Active Publication Date: 2011-09-07
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

[0006] In order to solve the problem of cumbersome operation and difficulty in ensuring accuracy in the existing method for extracting scattering parameters of electron beam exposure, the present invention provides a method for extracting scattering parameters of electron beam exposure, which does not require a large number of cumbersome measurements and data preprocessing and data processing. Fitting, so there is no measurement error, and reduces the error caused by mathematical processing, making parameter extraction accurate and easy

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  • Method for extracting electron-beam exposure scattering parameter
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  • Method for extracting electron-beam exposure scattering parameter

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Embodiment

[0050] In this embodiment, taking polymethyl methacrylate PMMA positive electronic resist as an example, the method for extracting scattering parameters of electron beam exposure provided by the present invention is further described with reference to the accompanying drawings.

[0051] Step 201: cleaning and heat-treating the surface of the two-inch silicon wafer substrate;

[0052]In this step, a batch (20 pieces) of new silicon wafers are first rinsed with deionized water, and then placed in a special container filled with concentrated sulfuric acid and heated at about 300°C for 40 minutes. After cooling, the silicon wafers are taken out and deionized Rinse off the water, put it in an oven, bake at 180°C for 2 hours, and wait for the water vapor to evaporate completely.

[0053] Step 202: Spin-coat a PMMA electron beam lithography resist layer on the surface of the Si substrate, perform a pre-baking treatment on a hot plate at 180°C for 2 minutes, let the organic solvent fu...

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Abstract

The invention relates to a method for extracting an electron beam lithography scattering parameter. In order to solve the problems of complex operation and difficult guarantee for the accuracy in the existing method for extracting the electron beam lithography scattering parameter, the invention provides the method for extracting the electron beam lithography scattering parameter. According to the electron beam resist agent for parameter extraction and the substrate structure characteristics, the method designs a suitable front-scattering parameter Alpha, a back-scattering parameter Beta, andan extracting version map of Gama which is the ratio of the back-scattering deposition energy and the front-scattering deposition energy; and then electron beam direct writing lithography of variabledoses for three types of design version maps is carried out on the electron beam resist agent and the substrate structure; and finally, according to a plurality of groups of different parameter lithography, development and the stripped graph structure features, a group of suitable scattering parameters are determined. The invention does not need large amount of complex measurement, therefore, no measurement error exists, the error caused by mathematical treatment is reduced, and the parameter extraction is led to be accurate, simple and feasible.

Description

technical field [0001] The invention relates to the technical field of electron beam exposure, in particular to a method for extracting scattering parameters of electron beam exposure. Background technique [0002] Electron beam lithography technology (including electron beam direct writing exposure and projection exposure) is an important means of modern micro-nano processing, and it is also a strong candidate for the next generation of lithography technology. Since the wavelength of the electron beam is extremely short (when the accelerating voltage is 15-20kv, the wavelength is about 0.1-0.07 angstroms), it will not be limited by the diffraction effect like optical lithography and can achieve higher resolution. However, the diffusion of the exposure range caused by the scattering of the incident electrons in the resist layer and the substrate restricts the improvement of its resolution and affects the imaging quality. For example, the outline of the graphic is extended t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/00G03F7/16G03F7/20G03F7/26
Inventor 赵珉陈宝钦刘明牛洁斌
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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