14 results about "Electron beam resist" patented technology

The present invention relates to a composition for forming a resist underlayer film, which contains a polymer having a structural unit (A) having a polycyclic aromatic structure and a crosslinking agent, and is used in lithography using a photoresist film or an electron beam resist film, and forming a lower layer film of the resist film on a nitrogen atom-containing substrate.

The application discloses a method for patterning and thinning two-dimensional tellurene, comprising the following steps: (1) transferring the prepared two-dimensional tellurene to a target substrate; (2) spin-coating electron beam resist on the surface of the two-dimensional tellurene in the target substrate, and then performing patterning on the electron beam resist by using an electron beam exposure method after baking; (3) placing the obtained two-dimensional tellurene with patterned electron beam resist in an oxidant solution for soaking, and performing selective etching and thinning on the exposed two-dimensional tellurene in the patterned area; (4) removing the electron beam resist on the surface of the two-dimensional tellurene by using an organic solvent, then washing with deionized water, and finally drying the washed two-dimensional tellurene at a certain temperature, so that the patterned and thinned two-dimensional tellurene is obtained. The thinning method is simple, green and economical, is suitable for the patterning and thinning of a large-area two-dimensional tellurium film, and avoids the material surface damage problem caused by high-energy particle bombardment in a traditional patterning and thinning method.

The invention provides a patterning reinforcing method of electron beam photoresist, which relates to the technical field of electron beam lithography, and comprises a silicon substrate Si, a surface oxide layer SiO2 is arranged on the silicon substrate, a photoresist layer is arranged at the top of the silicon substrate, and a reflection reinforcing layer is arranged between the surface oxide layer and the photoresist layer. The hafnium oxide HfO2 enhancement layer is prepared by molecular layer deposition, and each complete cycle in the molecular layer deposition process is composed of two reactions: (1) blowing in a gaseous hafnium metal source with the gas partial pressure of about 3.2 Pa and then carrying out nitrogen purging for 15 seconds, and (2) blowing in gaseous water with the gas partial pressure of about 5.6 Pa and then carrying out nitrogen purging for 30 seconds. According to the invention, the HfO2 coating film is added on the Si substrate to enhance the photoresist patterning scheme.

The invention provides an electron beam photoresist composition containing cross-linked resin as well as a preparation method and application of the electron beam photoresist composition. The electron beam photoresist composition comprises a blend of two different systems of resins, a self-crosslinking resin material is doped on the basis of electron beam photoresist substrate resin, and the problem that lines are prone to collapse is solved under the condition that a later electron beam photoetching basic process is not affected.

To provide an electron beam etching method for reducing a pixel size of an organic light emitting diode which reduces the pixel size to several hundred nanometers.SOLUTION: By introducing an electron beam lithography process method, an evaporation method through a fine metal mask in the manufacture of an existing organic light-emitting diode display screen is abandoned, and an insulating electron beam resist is used as a fixed mask, thereby avoiding thermal expansion and cold shrinkage of a material and a positioning error when the fine metal mask is moved or replaced. The process includes step (4) of etching a blind hole structure in an electron beam resist, step (5) of increasing a surface work function of a conductive anode on a substrate, and step (6) of evaporating each organic functional layer and a conductive cathode of an organic light-emitting diode on the electron beam resist having the blind hole structure to prepare the organic light-emitting diode with a pixel size of hundreds of nanometers.SELECTED DRAWING: Figure 3

The present invention provides electroactive compounds, compositions containing electroactive compounds, and methods for pattern formation. [Solution] A composition comprising: an acid-sensitive polymer containing a first repeating unit derived from a monomer containing an acid-degradable group; a photoacid generator compound; a nonpolymer electron acceptor compound having an electron affinity greater than the electron affinity of the photoacid generator compound, which does not generate photoacid and does not contain a plurality of diazonaphthoquinone (DNQ) groups; and a solvent present in the composition in an amount exceeding 50 weight percent based on the total weight of the composition, wherein the composition is a positive-type EUV photoresist or electron beam resist.

The present invention aims to provide an electroconductive polymer composition which can be suitably used for a filter and a flat film forming property on an electron beam resist is excellent, and also shows excellent antistatic properties in an electron beam lithography process due to the property of a low volume resistivity (Ω·cm), and reduces the influence of an acid diffused from the film to a minimum to reduce the influence on lithography, and also has excellent stripping properties based on H2O or an alkaline developer after drawing for an antistatic film for electron beam lithography. The electroconductive polymer composition is characterized by containing: (A) a polyaniline-based electroconductive polymer having at least one or more repeating units represented by the following general formula (1), and (B) a carboxylic acid salt represented by the following general formula (2). [Chemical Formula 1] [Chemical Formula 2] [Chemical Formula 3]

The invention provides a layered structure for an electron beam lithography process and a lithography process thereof. By adopting the layered structure to carry out electron beam lithography, the problem that electron beam lithography pattern lines are easy to collapse can be effectively improved, the obtained pattern has better line edge roughness, and the pattern lines are clearer. In addition, the obtained photoetching pattern lines also have good contrast. According to the layered structure, the sensitivity of the electron beam photoresist is remarkably improved.

A composition including an acid-sensitive polymer comprising a first repeating unit derived from a monomer comprising an acid-decomposable group; a photoacid generator compound; a non-polymeric electron acceptor compound that has a greater electron affinity than an electron affinity of the photoacid generator compound, wherein the non-polymeric electron acceptor compound does not generate a photoacid, and wherein the non-polymeric electron acceptor compound does not comprise a plurality of diazonaphthoquinone (DNQ) groups; and a solvent, wherein the solvent is present in the composition in an amount greater than 50 weight percent, based on total weight of the composition, wherein the composition is a positive-acting EUV photoresist or an electron beam resist.

A conductive polymer composition containing: (A) a polyaniline-based conductive polymer having a repeating unit represented by following general formula (1); and (B) polymer having structure represented by following general formula (2). In formulae, each of R1 to R4 represents hydrogen atom, acidic group, hydroxy group, alkoxy group, carboxy group, nitro group, halogen atom, or hydrocarbon group, R5 and R6 each independently represent a hydrogen atom, linear, branched, or cyclic alkyl group having 1-10 carbon atoms or a hydrocarbon group containing a hetero atom, Xa- represents anion, and “a” represents valence. The conductive polymer composition has good filterability and film-formability of flat film on electron beam resist and can be used suitably for antistatic film for electron beam resist writing showing excellent antistatic property in electron beam writing process, and, reducing effect of acid diffused from film to minimum, and also having excellent peelability.

The application belongs to the field of photoresist microelectronic chemistry technology, and discloses application of polyphosphate as an electron beam photoresist material, and the structure of the polyphosphate is shown as formula I, wherein R1 is a benzene ring-containing group, R2 is a carbocyclic or heterocyclic group, m is a polymerization degree, 10 <= m <= 1000, and the molecular weight distribution is 1.00-3.0. The polyphosphate is used as the electron beam photoresist material, and has high resolution and high sensitivity, and can be used for manufacturing large-area complex layout.

This invention discloses a high-frequency, high-voltage gate structure based on source and drain functional decoupling and its fabrication method, belonging to the field of semiconductor device technology. The method includes: depositing a passivation layer on a substrate, then forming an asymmetric gate pin pattern with source and drain sidewalls on an electron beam resist using asymmetric progressive electron beam lithography; etching the passivation layer using this pattern as a mask to form asymmetric gate pin grooves; subsequently forming a gate neck region and a gate cap region with an undercut structure through multilayer photolithography; and finally fabricating a floating T-type gate through metal deposition and lift-off processes. This invention reduces gate capacitance through steep source sidewalls and modulates the electric field distribution through gentle drain sidewalls, achieving synergistic optimization of frequency characteristics and voltage withstand capability. It effectively solves the performance trade-off problem of traditional symmetrical structures in the millimeter-wave band and is suitable for high-frequency applications such as 5G / 6G communication and satellite communication.

The application belongs to the technical field of semiconductor device manufacturing, and relates to preparation of a positive electron beam resist film, in particular to a zinc-dichloroimidazole coordination dense film and a preparation method thereof. The preparation method comprises film deposition by alternately adopting atomic layer deposition and molecular layer deposition, and the film material contains an electron beam sensitive leaving group, is a positive resist film, cannot be etched by hexafluoroacetylacetone when not irradiated by an electron beam, and can be etched by hexafluoroacetylacetone after irradiation by an electron beam. Neither film deposition nor etching uses a liquid solvent, no chemical waste liquid is generated, and the method is environmentally friendly. The film is loaded on 5A zeolite and has potential for electron beam lithography for manufacturing high-precision patterns, provides a potential scheme for a process of depositing a positive electron beam resist film on a silicon substrate, can solve the problems of using a liquid solvent in the film deposition process of the electron beam resist film and uneven film thickness, and has important application in semiconductor advanced processes and the like.

An underlayer film, which is a baked product of a coating film of an underlayer film-forming composition, in which in lithography using a resist film of either a photoresist film or an electron beam resist film and a self-assembled film, the underlayer film is used as an underlayer film of the resist film, and then is further used as an underlayer film of the self-assembled film, the underlayer film-forming composition contains a polymer and a crosslinking agent, the polymer has a unit structure (A) having a polycyclic aromatic structure and a unit structure (B) having a reactive group, and the crosslinking agent has a functional group that can react with the reactive group.