Double-layer glue removing method used for electron beam lithography stripping

An electron beam lithography, double-layer adhesive technology, applied in coating, optics, circuits, etc., can solve the problem of blurred internal cutting structure of double-layer adhesive, improve the peeling yield, reduce the difficulty of peeling process, and widely The effect of the application foreground
CN101430503AActive Publication Date: 2009-05-13INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Publication Date
2009-05-13

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Abstract

The invention discloses a method for removing double layered glue in electron bean lithography lift off, which comprises that a substrate is cleaned and dried; an LOR type resist is coated on the substrate in a pin way to be as the under layer glue of the double layered glue and is dried; a ZEP520 type electron beam resist is coated on an LOR layer in a pin way to be as the top layer glue and is prebaked; electron beam lithography exposes the top layer glue. The exposed top layer glue is developed, fixed and dried to obtain the etching graph of the top layer glue; an LOR corrosive erodes the under layer glue by using the top layer glue as masking to obtain a required interior contact graph; metal is evaporated on the obtained interior contact graph; the top layer glue and the under layer glue are sequentially removed to finish the peeling procedure and obtain the required metal graph. By using the method, the problem that the interior contact structure of the double layered glue becomes vague is solved; the method has the advantages of high resolution, high reliability, good repeatability and the like and has wide application prospect in the preparation of nano electronic devices.
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Description

technical field

[0001] The invention relates to the technical field of micro-nano processing in microelectronics and nanoelectronics, in particular to a method for removing double-layer glue used in electron beam photolithography stripping. Background technique

[0002] As the feature size of large-scale integrated circuits enters the nanometer level, traditional silicon-based integrated circuit technology is facing challenges, nanoelectronics is developing vigorously, and research on new processes has become a current hot field.

[0003] Due to the inscribed structure of the bottom glue (such as figure 1 as shown, figure 1 It is a schematic diagram of a double-layer glue inscribed structure), which reduces the difficulty of the metal lift-off process, improves the yield of the metal lift-off process, and has broad potential application prospects in the preparation of metal electrodes for nanoelectronic devices and nanoimprint templates.

[0004] Usually, the commonly used...

Claims

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