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Double-layer glue removing method used for electron beam lithography stripping

An electron beam lithography, double-layer adhesive technology, applied in coating, optics, circuits, etc., can solve the problem of blurred internal cutting structure of double-layer adhesive, improve the peeling yield, reduce the difficulty of peeling process, and widely The effect of the application foreground

Active Publication Date: 2009-05-13
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

[0008] In view of this, the main purpose of the present invention is to provide a method for removing double-layer glue for electron beam lithography stripping, to solve the problem that the inscribed structure of double-layer glue becomes blurred

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  • Double-layer glue removing method used for electron beam lithography stripping
  • Double-layer glue removing method used for electron beam lithography stripping
  • Double-layer glue removing method used for electron beam lithography stripping

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Embodiment Construction

[0034] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0035] LOR (Micro Chem.Corp.) is not sensitive to electron beams, and is insoluble in PMMA / ZEP520 commonly used developer and fixer. It is an ideal choice for the bottom layer of electron beam double-layer adhesives. Therefore, the present invention uses ZEP520 as the top glue and LOR as the bottom glue, which has high innovative significance and practical value. Moreover, at present, there is no patent application for the double-layer adhesive process applied to electron beam lithography. The patent applied for (Chinese patent application number: 02123171.0) is a double-layer adhesive process for optical lithography, and the method of etching the bottom layer adhesive with O2 / HBr gas is complicated and different from the...

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Abstract

The invention discloses a method for removing double layered glue in electron bean lithography lift off, which comprises that a substrate is cleaned and dried; an LOR type resist is coated on the substrate in a pin way to be as the under layer glue of the double layered glue and is dried; a ZEP520 type electron beam resist is coated on an LOR layer in a pin way to be as the top layer glue and is prebaked; electron beam lithography exposes the top layer glue. The exposed top layer glue is developed, fixed and dried to obtain the etching graph of the top layer glue; an LOR corrosive erodes the under layer glue by using the top layer glue as masking to obtain a required interior contact graph; metal is evaporated on the obtained interior contact graph; the top layer glue and the under layer glue are sequentially removed to finish the peeling procedure and obtain the required metal graph. By using the method, the problem that the interior contact structure of the double layered glue becomes vague is solved; the method has the advantages of high resolution, high reliability, good repeatability and the like and has wide application prospect in the preparation of nano electronic devices.

Description

technical field [0001] The invention relates to the technical field of micro-nano processing in microelectronics and nanoelectronics, in particular to a method for removing double-layer glue used in electron beam photolithography stripping. Background technique [0002] As the feature size of large-scale integrated circuits enters the nanometer level, traditional silicon-based integrated circuit technology is facing challenges, nanoelectronics is developing vigorously, and research on new processes has become a current hot field. [0003] Due to the inscribed structure of the bottom glue (such as figure 1 as shown, figure 1 It is a schematic diagram of a double-layer glue inscribed structure), which reduces the difficulty of the metal lift-off process, improves the yield of the metal lift-off process, and has broad potential application prospects in the preparation of metal electrodes for nanoelectronic devices and nanoimprint templates. [0004] Usually, the commonly used...

Claims

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Application Information

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IPC IPC(8): G03F7/00G03F7/42G03F7/26G03F7/32C23C14/00
Inventor 涂德钰刘明谢常青刘新华商立伟
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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