Graphene device capable of realizing spin polarization and preparation method thereof
A technology of spin polarization and graphene, which is applied in the manufacture/processing of Hall effect devices and electromagnetic devices, can solve the problems of low yield, high cost, and difficult promotion, and achieve high yield, low cost, The effect of easy promotion
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[0037] The present invention will be further described through the embodiments below in conjunction with the accompanying drawings.
[0038] The physical mechanism of the present invention: the magnetic insulator nanosheet and graphene form a heterogeneous structure, and the hybridization of the electron orbit of the magnetic atom in the magnetic insulator nanosheet and the π electron orbit of graphene is the source of the magnetic proximity at the interface. Through the magnetic proximity of the magnetic insulator, an exchange field is induced on the graphene, which causes the Zeeman splitting of the graphene to cause spin polarization. Such as figure 1 As shown in (a), the spin-up and down energy bands of initial graphene are degenerate; when there is a Zeeman splitting as figure 1 As shown in (b), the graphene spin-up and spin-down energy bands move in opposite directions, respectively. When there is no external magnetic field, the Zeeman splitting energy gap at this time...
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