2021 results about "Coupling effect" patented technology

A non-volatile memory device and programming process is described that compensates for coupling effects on threshold gate voltages of adjacent floating gate or non-conductive floating node memory cells by adjusting the threshold voltage level programmed in view of the data being programmed on a following programming cycle into adjacent memory cells, so that the coupling effect results in the desired target threshold voltages for the cells. In one embodiment of the present invention, memory cell coupling is compensated for by adjusting programming level of one or more memory cells of a first page a memory array to a higher or lower threshold verify target voltage given the data/programming level to be written to directly adjacent memory cells of a second page, so that coupling between the directly adjacent memory cells of the first and second pages brings the memory cells of first page to their final target programming level.

Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pronouncedly between sets of adjacent memory cells that have been programmed at different times. To account for this coupling, the read process for a particular memory cell will provide compensation to an adjacent memory cell in order to reduce the coupling effect that the adjacent memory cell has on the particular memory cell.

A dual frequency band inverted-F antenna used for communicating a low frequency signal and a high frequency signal includes a substrate, a ground metal, a vortical metal structure, a short circuit leg, a feeding leg, and a terminal micro strip. The ground metal and the terminal micro strip are formed on the lower surface of the substrate. The vortical metal structure, formed on the upper surface of the substrate, further has a short circuit end and an open circuit end. The short circuit leg connects electrically the short circuit end of the vortical metal structure with the ground metal. The feeding leg extends along a predetermined direction of the vortical metal structure to couple with a feeding circuit on the substrate. The terminal micro strip connects electrically to the open circuit end through a first conductive aperture. By increasing the encircling number of the vortical metal structure, the coupling effect is generated so that the equivalent wavelength of the high frequency signal can be longer, thus the resonance frequency thereof can be reduced, and so a first frequency can be still kept communicating at a lower frequency band and a second frequency can also be added for communicating at a higher frequency band.

Embodiments of the invention provide a flash memory device that can improve the reliability of a reading operation by minimizing a variation in the threshold voltage distribution that occurs due to coupling between cells, and a method of driving the flash memory device. In an embodiment of the invention, the method of driving the flash memory includes: performing an erasing operation on memory cells; after the performing the erasing operation, performing a post-programming operation to control a threshold voltage of the memory cells; and after performing the post-programming operation, performing a main programming operation on the memory cells, wherein the performing of the post-programming operation comprises increasing the threshold voltage of the memory cells in an erased state, thereby reducing a difference in the threshold voltage between the memory cells in the erased state and the memory cells in the programmed state.

A magnetic memory cell including a soft magnetic layer and a coupling layer, and methods of operating the memory cell are provided. The memory cell includes a stack with a free ferromagnetic layer and a pinned ferromagnetic layer, and a soft magnetic layer and a coupling layer may also be formed as layers in the stack. The coupling layer may cause antiferromagnetic coupling to induce the free ferromagnetic layer to be magnetized in a direction antiparallel to the magnetization of the soft magnetic layer, or the coupling layer may cause ferromagnetic coupling to induce the free ferromagnetic layer to be magnetized in a direction parallel to the magnetization of the soft magnetic layer. The coupling layer, through a coupling effect, reduces the critical switching current of the memory cell.

For a non-volatile memory system, compressing the erase threshold voltage distribution into the lowest threshold voltage state will decrease the valid data threshold voltage window. Decreasing the valid data threshold voltage window reduces the floating gate to floating gate coupling effect. The compression can be performed as part of the erase process or part of the programming operation.

The invention provides waterproof sealing paste producing chemical crosslinking and physical mortising with cement. The sealing paste is characterized by comprising the following raw materials in parts by weight: 40-60 parts of synthesized rubber latex, 20-30 parts of rubber modified emulsified asphalt, 1-2 parts of a functional additive, 10-30 parts of filler, 0.5-5 parts of plasticizer, 1-3 parts of a thickener and 2-5 parts of water. A principle is that part of molecules in the synthesized rubber and the asphalt are coupled into macromolecules with reactivity under the coupling effect of the functional additive; when the macromolecules are contacted with a basic surface, the non-reactivity molecule sections of the rubber and the asphalt form a physical adsorption effect with the basic surface, and the reactivity molecule sections react with the basic surface to form a chemical bonding effect so as to generate a powerful bonding force; and the bonding effect is difficultly influenced by outside environment factors after the bonding operation is finished. Therefore, the sealing paste is very excellent in waterproof performance.

The invention relates to a high-speed milling process parameter optimizing method based on a dynamic model. The optimizing method includes 1) inputting structure parameter and initial cutting condition of a spindle-cutter system; 2) building a dynamic model of the spindle-cutter system, calculating a frequency response function of the cutter nose position according to the model and determining cutting force coefficient; 3) building a high speed spindle-cutter dynamic characteristic and milling interaction process model to obtain the characteristic equation of a closed loop dynamic milling system; 4) calculating a high-speed milling machining shimmy stability leaf picture; 5) selecting lathe spindle rotating speed and cutting depth to achieve high-speed milling parameter optimization with the lower bound curve of the high-speed milling machining shimmy stability leaf picture as the constraint condition and with maximum material removing rate as the optimization target. The method considers centrifugal force and gyroscopic couple effect of the cutter-cutter system in the high-speed rotating state, approaches actual work condition, improves accuracy of stability prediction, and provides effective technology for optimization of high-speed milling process parameter optimization.

Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pronouncedly between sets of adjacent memory cells that have been programmed at different times. To account for this coupling, the read process for a particular memory cell will provide compensation to an adjacent memory cell in order to reduce the coupling effect that the adjacent memory cell has on the particular memory cell.

A YUKAI NAND array comprising multiple strings associated with hierarchical global/local bit lines (GBL/LBL) and each string being associated with one LBL and having adjacent LBL as a dedicated local source line (LSL) without a common source line to connect all strings. Each of the LBLs is interleavingly associated with either an Odd or Even string selected via one pair of dummy cells inserted in each string and is used as one on-chip PCACHE register with full BL-shielding without wasting extra silicon area to allow batch-based multiple concurrent MLC All-BL, All-Vtn-Program and Alternative-WL program, Odd/Even read and verify operations with options of providing individual and common V_SL-based Vt-compensation and V_LBL compensations to mitigate high WL-WL and BL-BL coupling effects. Bias conditions in each string are provided to correctly sense highly-negative erase-verify voltage, multiple negative program-verify voltages and without V_DS punch-through, breakdown and body-effect in both boundary and non-boundary WLs cells.

An in-plane switching liquid crystal display, especially relative to an in-plane switching liquid crystal display with the absence of an overcoat layer is provided. The in-plane switching liquid crystal display having a first substrate, a second substrate and a liquid crystal layer sandwiched therebetween, a plurality of gate lines and data lines disposed on the first substrate, a counter electrode disposed on the second substrate and corresponding to one of the data lines, a pixel having a pixel electrode, a pair of shielding electrodes and a common electrode also disposed on the first substrate. Through the arrangement of shielding electrodes as well as the counter electrode, the coupling effect of the applied pixel voltage on the data lines is shielded.

The invention discloses a method for predicting the remaining lifetime of a high-temperature part of a steam turbine after defects are found, including the following steps of: obtaining the material property of the material of the high-temperature part of the steam turbine at different temperatures; performing nondestructive flaw detection on the high-temperature part of the steam turbine; regularizing cracks obtained by nondestructive flaw detection as elliptic type cracks; analyzing and evaluating the interference and communication between cracks; analyzing the stress of the high-temperature part; predicting the remaining lifetime of the high-temperature part of the steam turbine. The invention has the advantages of taking reasonably the coupling effect of fatigue and creep deformation on the lifetime into consideration, realizing the judgment of cracks interference and combination, improving the calculation accuracy of the remaining lifetime of the high-temperature part of the steam turbine; therefore, the invention can be used to support the analysis of safety performance of defects and the prolonging of the service life of the high-temperature part in the manufacturing process and to guide the reasonable making of repair schedule.

An antenna apparatus including a metal layer, a first planar antenna, a second planar antenna and a conducting wire is provided. The first planar antenna has a first ground terminal electrically connected to the metal layer. The second planar antenna has a second ground terminal electrically connected to the metal layer. The conducting wire is connected between the first planar antenna and the second planar antenna. In the whole operation, electromagnetic signals transmitted by the first planar antenna and the second planar antenna are in the same frequency band, and the coupling effect of the first planar antenna and the second planar antenna is reduced along with the formation of a current loop of the conducting wire.

Errors can occur when reading the threshold voltage of a programmed non-volatile storage element due to at least two mechanisms: (1) capacitive coupling between neighboring floating gates and (2) changing conductivity of the channel area after programming (referred to as back pattern effect). To account for coupling between neighboring floating gates, the read process for a particular memory cell will provide compensation to an adjacent memory cell in order to reduce the coupling effect that the adjacent memory cell has on the particular memory cell. To account for the back pattern effect, a first voltage is used during a verify operation for unselected word lines that have been subjected to a programming operation and a second voltage is used for unselected word lines that have not been subjected to a programming operation. The combination of these two techniques provides for more accurate storage and retrieval of data.