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Process for producing nano-scale cross lines array structure organic molecule device

A technology of molecular devices and array structures, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of polluting organic materials, difficult processing, and improvement, and achieve the effect of avoiding damage and improving reliability

Active Publication Date: 2007-12-05
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology

The current manufacturing process of the cross-wire structure is generally to first prepare the lower electrode, then grow the organic material, and finally complete the preparation of the upper electrode. In the prepar

Method used

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  • Process for producing nano-scale cross lines array structure organic molecule device
  • Process for producing nano-scale cross lines array structure organic molecule device
  • Process for producing nano-scale cross lines array structure organic molecule device

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Experimental program
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Embodiment Construction

[0015] Invention flow chart (the section selected in the flow chart is the A-A section in Figure 1-14):

[0016] 1. As shown in Figure 1-1, an insulating layer film is prepared on the substrate surface by thermal oxidation growth or chemical vapor deposition.

[0017] 2. As shown in Figure 1-2, spin-coat electron beam photoresist on the surface of the insulating layer film, and bake it on a hot plate or an oven.

[0018] 3. As shown in Figure 1-3, the lower electrode pattern is obtained on the photoresist after electron beam exposure and development.

[0019] 4. As shown in Figure 1-4, the metal thin film of the lower electrode is obtained by metal evaporation.

[0020] 5. As shown in Figure 1-5, the metal lower electrode is prepared on the insulating layer after ultrasonic stripping with acetone, ethanol and deionized water.

[0021] 6. As shown in Figure 1-6, the organic molecular film is prepared by vacuum evaporation or liquid phase LB film. Organic molecular materials ...

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Abstract

The invention belongs to the micro machining field in microelectronics and molectronics, especially relating to a method for preparing nano cross line array structure organic molecular device, comprising the steps of: 1. depositing insulating film on substrate surface; 2. spin-coating electron beam resist on the insulating film surface, making electron beam exposure and developing to obtain lower electrode figure; 3. evaporating to prepare lower electrode metal; 4. peeling off the metal to obtain cross line lower electrode; 5. cover-grow organic molecular film on the lower electrode; 6. evaporating to prepare metal protection layer on the organic molecular film; 7. spin-coating double layers of photoetching glue on the protection layer, and making electron beam exposure and developing to obtain upper electrode figure; 8. slantingly evaporating to prepare upper electrode metal film; 9. peeling off the metal to obtain cross line upper electrode; and 10. dry-etching the protection layer and completing preparing of the device.

Description

technical field [0001] The invention belongs to the field of microfabrication in microelectronics and molecular electronics, and in particular relates to a preparation method of an organic molecular device with a nanoscale cross-line array structure. Background technique [0002] As the feature size of large-scale integrated circuits enters the nanometer level, the traditional silicon-based integrated circuit technology is facing challenges, and the research on new materials and new structures has become a hot spot. Molecular electronic devices, one of the branches of nanoelectronics, are booming. FET and cross-wire are currently the main structures of molecular electronic devices, and the cross-wire structure is beneficial to integration and has attracted extensive attention. The current manufacturing process of the cross-wire structure is generally to first prepare the lower electrode, then grow the organic material, and finally complete the preparation of the upper electr...

Claims

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Application Information

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IPC IPC(8): H01L51/40
Inventor 商立伟涂德钰王丛舜刘明
Owner SEMICON MFG INT (SHANGHAI) CORP
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