Surface acoustic wave filter and preparation method thereof

A surface acoustic wave and filter technology, which is applied in the field of surface acoustic wave filters and their preparation, can solve the problems of expensive lithography machines and electron beam direct writing equipment, and achieves reduction of preparation cost, reduction of preparation time, and consideration of line The effect of miniaturization of wide size

Active Publication Date: 2020-10-13
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

More advanced lithography machines and electron

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Surface acoustic wave filter and preparation method thereof
  • Surface acoustic wave filter and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] The invention provides a method for preparing a surface acoustic wave filter, in particular a method for preparing a filter for high-frequency surface acoustic waves, which can realize batch and low-cost preparation of high-frequency surface acoustic wave filters.

[0019] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0020] As an aspect of the present invention, a method for preparing a surface acoustic wave filter is provided, comprising the steps of:

[0021] Step 1: Place the filter plate with nanopores between the mask plate and the piezoelectric substrate coated with electronic resist;

[0022] Step 2: Using the electron beam exposure method, image-transfer the pinholes of the interdigitated electrode mask pattern on the reticle to the electronic resist of the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a surface acoustic wave filter and a preparation method thereof. The preparation method comprises the following steps: step 1, placing a filter plate with nanopores between amask plate and a piezoelectric substrate coated with an electronic resist; step 2, transferring the interdigital electrode mask pattern pinhole image on the mask onto the electronic resist of the piezoelectric substrate by using an electron beam exposure method, and forming an interdigital electrode pattern of which the line width is reduced relative to the interdigital electrode mask pattern of the mask on the piezoelectric substrate; step 3, stripping or etching an exposed area outside the interdigital electrode pattern of the piezoelectric substrate; and step 4, removing the electronic resist, and forming an interdigital electrode on the piezoelectric substrate to obtain the surface acoustic wave filter. According to the method disclosed in the invention, the line width of the a devicecan be reduced, the center frequency of the device can be improved, meanwhile, the preparation method can realize rapid and large-batch preparation of the device, and the processing cost is reduced.

Description

technical field [0001] The invention relates to the field of surface acoustic wave filter processing, in particular to a surface acoustic wave filter and a preparation method thereof. Background technique [0002] SAW filters are in great demand in the communications field. The center frequency required by the surface acoustic wave filter used in smart phones is getting higher and higher, and the line width of the interdigitated electrodes in the corresponding filter is getting smaller and smaller. The line processing capability of ordinary lithography machines is becoming more and more difficult to meet the demand. More advanced lithography machines and electron beam direct writing equipment are very expensive. How to prepare high-frequency surface acoustic wave filters quickly and at low cost is a technical problem that researchers in this field need to solve. Contents of the invention [0003] In view of this, the present invention provides a surface acoustic wave fi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H03H9/25H03H9/64G03F7/20
CPCH03H9/25H03H9/64G03F7/20
Inventor 梁圣法张文昌项飞斌牛洁斌姚志宏李冬梅刘明谢常青
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap