Controllable preparation method and product of germanium silicon nanometer low-dimensional structure

Abstract

The invention discloses a controllable preparation method of a germanium-silicon nano lower-dimension structure and the germanium-silicon nano lower-dimension structure. The controllable preparation method comprises the following steps of (a) cleaning a silicon substrate; (b) forming germanium-silicon alloy on the silicon substrate in an epitaxial growth mode to form an epitaxial substrate; (c) spreading electron resist and exposing the required germanium-silicon nano lower-dimension structure graph on the electron resist through the electron beam photolithography; (d) transferring the germanium-silicon nano lower-dimension structure graph to the epitaxial substrate through dry etching to obtain a sample; (e) removing the electron resist on the sample; (f) performing oxidation and anneal under a high-temperature environment to enable oxygen to react with silicon preferentially to form silicon oxide and germanium to be separated out; (g) performing anneal in a nitrogen and hydrogen mixing atmosphere to form the germanium-silicon nano lower-dimension structure. By means of the controllable preparation method, controllable preparation of the germanium-silicon nano lower-dimension structure in dimension, shape, position and component is achieved. Furthermore, the controllable preparation method has the advantages of being low in process difficulty, high in repeatability and capable of performing large-scale integration easily.

Description

technical field [0001] The invention belongs to the technical field of nano-processing of semiconductor devices, and in particular relates to a controllable preparation method and product of germanium-silicon nanometer low-dimensional structure. Background technique [0002] SiGe nano-low-dimensional structures are nanoscale structures with two-dimensional quantum confinement or three-dimensional quantum confinement, such as SiGe quantum dots and SiGe nanowires. They have gradually become a research hotspot in the field of integrated optoelectronics in recent years. The low-dimensional nanostructure of silicon germanium has the advantages of unique light emission and light absorption characteristics in the communication band, quantum confinement effect and Coulomb blockade effect, good carrier mobility, and compatibility with CMOS technology, etc., and has very broad application prospects. For example, silicon germanium quantum dots can be used to make on-chip integrated li...

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Problems solved by technology

This kind of silicon germanium nanowires generally grows vertically upwards, and the growth direction and position are often relatively random, so the grown silicon germanium nanowires are not easy to be compatible with the planar process of semiconductor micro-nano processing

[0005] In short, although the existing growth and preparation processes of silicon germanium nanowires and quantum dots are relatively mature, they cannot realize the fully controllable preparation of nanometer low-dimensional structures, and cannot precisely control each nanowire and each quantum dot. Key parameters such as point location, size, morphology, and composition have brought great technological difficulties to the processing of semiconductor devices based on germanium-silicon nano-structure at low temperature

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