A method for preparing the nano-electrode with the negative electronic erosion-resisting agent

A nano-electrode and resist technology, applied in the field of nano-electrode preparation, can solve the problems of optical lithography resolution difficult to reach nanoscale resolution, low efficiency, single electrode material, etc.
CN101017778AInactive Publication Date: 2007-08-15INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Publication Date
2007-08-15
Estimated Expiration
Not applicable · inactive patent

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Abstract

The preparation method for nano electrode comprises: growing well-conductive metal or semiconductor layer; using EBL to obtain a couple or group negative electronic anti-corrosive agent, and coating the agent; first baking; with electron beam to direct expose; developing, fixing, etching, and stripping the photoresist. The product has 20-100nm space and fit to wide application. This invention is simple and reliable, and compatible with traditional CMOS technology.
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Description

technical field

[0001] The invention belongs to the technical field of nano processing, in particular to a preparation method of a nano electrode. Background technique

[0002] For more than half a century, semiconductor integrated circuits with CMOS as the mainstream technology have been developing rapidly following "Moore's Law". Nanoelectronic devices with new principles, such as various quantum dot devices, nanowires, nanotube devices, and single-electron devices, have become research hotspots. In the manufacture of these nanoelectronic devices, the manufacture of nanoelectrodes with small size, good conductivity and nanoscale gaps is a key and difficult point.

[0003] The Chinese invention patent with application number 200410095163.9 mainly uses chemical methods combined with the use of polymer materials to prepare electrodes, but this electrode has not reached the nanometer scale. The Chinese invention patent with the application number 200410010181.2 uses an atomi...

Claims

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