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Manufacturing method of nano structure

A nanostructure and fabrication method technology, applied in the field of nanostructure fabrication, can solve the problems of nanostructure damage, electron beam resist being difficult to be stripped off, etc.

Pending Publication Date: 2020-01-31
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for nanoscale structures, especially closed patterns, electron beam resists are difficult to peel off, and improper handling can easily cause damage to nanostructures

Method used

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  • Manufacturing method of nano structure
  • Manufacturing method of nano structure

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0075] The manufacturing process of the nanostructure of the present embodiment is specifically as follows:

[0076] (1) Use L-Edit software to draw the layout according to the graph of the nanostructure, wherein the layout is provided with an exposure area and a non-exposure area, and 3 auxiliary exposure areas are set in the non-exposure area, and the 3 auxiliary exposure areas are arranged along a straight line, And the auxiliary exposure area is located in the middle of the non-exposed area, and the ratio of the total area of ​​the three auxiliary exposure areas to the area of ​​the non-exposed area is 1:4.

[0077] (2) Use polymethyl methacrylate as the positive electronic resist, and use a glue coater to spin-coat the positive electronic resist on the substrate to form a resist layer with a thickness of 200 nanometers.

[0078] (3) Expose the resist layer according to the layout, and then use a developer to develop it for 2 minutes to obtain a resist layer with a pattern...

Embodiment 2

[0082] The manufacturing process of the nanostructure of the present embodiment is specifically as follows:

[0083] (1) Use L-Edit software to draw the layout according to the graph of the nanostructure, wherein the layout is provided with an exposure area and a non-exposure area, 2 auxiliary exposure areas are set in the non-exposure area, and 2 auxiliary exposure intervals are set, and the auxiliary The exposed area is located in the middle of the non-exposed area, and the ratio of the total area of ​​the two auxiliary exposed areas to the area of ​​the non-exposed area is 1:7.

[0084] (2) Use polymethyl methacrylate as the positive electronic resist, and use a coating machine to spin-coat the positive electronic resist on the substrate to form a resist layer with a thickness of 100 nanometers.

[0085] (3) Expose the resist layer according to the layout, and then use a developer to develop it for 1 minute to obtain a resist layer with a pattern. Among them, the exposure ...

Embodiment 3

[0089] The manufacturing process of the nanostructure of the present embodiment is specifically as follows:

[0090] (1) Use L-Edit software to draw the layout according to the graph of the nanostructure, wherein the layout is provided with an exposure area and a non-exposure area, and 6 auxiliary exposure areas are set in the non-exposure area, and the 6 auxiliary exposure areas are along an arc set, and the auxiliary exposure area is located in the middle of the non-exposed area, the ratio of the total area of ​​the six auxiliary exposure areas to the area of ​​the non-exposed area is 1:30.

[0091] (2) Use polymethyl methacrylate as the positive electronic resist, and use a glue coater to spin-coat the positive electronic resist on the substrate to form a resist layer with a thickness of 300 nanometers.

[0092] (3) Expose the resist layer according to the layout, and then use a developer to develop it for 3 minutes to obtain a resist layer with a pattern. Among them, the ex...

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Abstract

The invention relates to a manufacturing method of a nano structure. The method comprises the steps that a layout which is provided with an exposed area and a non-exposed area is drawn, and an auxiliary exposure area is set in the non-exposed area; a positive electron resist is used to form a resist layer on a substrate; and the resist layer is exposed according to the layout, and then developed to acquire a patterned resist layer. In the step of the exposure process, the exposure dose of the auxiliary exposure area is smaller than the exposure dose of the exposed area, so that a groove is formed in the area of the resist layer corresponding to the auxiliary exposure area. A metal layer is formed on the patterned resist layer to acquire a laminate. The laminate is cleaned with a stripper reagent to remove the resist layer to acquire the nano structure. According to the manufacturing method of the nano structure, a pattern is easily peeled, and the acquired pattern is complete.

Description

technical field [0001] The invention relates to the field of making nanostructures, in particular to a method for making nanostructures. Background technique [0002] Nanostructures are widely used, but the preparation process of nanostructures is relatively complicated. The flexibility and high resolution of electron beam exposure direct writing make it possible to process fine structures smaller than 10 nanometers. Therefore, electron beam lithography equipment is often used to prepare nanostructures. We formed the nanostructures by spin-coating an e-beam resist on the substrate and after e-beam exposure. After the metal film is deposited, it is peeled off to transfer the nanostructure to the metal film. However, for nanoscale structures, especially closed patterns, the electron beam resist is difficult to be stripped off, and improper handling can easily cause damage to nanostructures. Contents of the invention [0003] Based on this, it is necessary to provide a me...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/00
CPCG03F7/0035
Inventor 段天利王尧马续航张锐瞿学选
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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