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Method for producing nano-structure on insulated underlay

An on-insulating, nano-structured technology, applied in opto-mechanical equipment, patterned surface photoengraving process, semiconductor/solid-state device manufacturing, etc. , the effect of assisting the dissolution process and increasing flexibility

Inactive Publication Date: 2011-08-31
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although this method can effectively avoid the accumulation of charges in electron beam exposure, if the conductive layer material on the surface of the substrate is not effectively removed, it may cause contamination of the sample and even change the characteristics of the material, such as Conductive layers such as ITO glass can only be removed by etching, which increases the complexity of the process and may cause damage to the pattern
Moreover, the two methods mentioned above simply solve the problem of electron beam exposure on the insulating substrate, which is not only helpful to the subsequent stripping process, but also often accompanied by serious side effects, such as high accelerating voltage. Severe edge effects or cracking of the electronic resist layer, without any treatment, simply plating a conductive layer on the surface of the substrate or resist layer will often bring unnecessary pollution or have to introduce unnecessary Etching process

Method used

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  • Method for producing nano-structure on insulated underlay
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Examples

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Effect test

Embodiment 1

[0031] Embodiment 1, the method for making nanostructure on insulating quartz glass, comprises the following steps:

[0032] 1. Select insulating quartz glass as the substrate, choose 0.8mm double-sided polished quartz glass as the substrate 1, and clean it with acetone, alcohol and deionized water in sequence, after ultrasonic cleaning, then dry it with dry nitrogen, and put it at 95°C Bake on a hot plate for two hours and set aside;

[0033] 2. Use thermal evaporation coating equipment to deposit a layer of 80nm aluminum film 2 on the above-mentioned baked quartz glass substrate 1, and then spin-coat a layer of about 140nm thick electron beam resist on the aluminum film 2. Agent 3, the electron beam resist is selected from the PMMA495 glue purchased on the market, and the spin coating speed is 4000rpm; after spin coating, the sample is pre-baked with a hot plate at 180°C, and the pre-baking time is 65 seconds;

[0034] 3 Design of nanostructure pattern: According to the siz...

Embodiment 2

[0041] The preparation method of the present embodiment is identical with embodiment 6, but condition is as follows:

[0042] Fabrication of nano-copper electrodes on insulating sapphire substrate 1: 1 mm thick double-sided polished sapphire was cleaned ultrasonically with acetone, alcohol and deionized water, dried with dry nitrogen, and baked on a hot plate at 115°C for two hours . A layer of 120nm aluminum film 2 is deposited on the sapphire substrate using magnetron sputtering coating equipment, and then a layer of electron beam resist 3 with a thickness of about 120nm is spin-coated on the aluminum film 2. The electron beam resist Use the PMMA950 glue purchased in the market. After spin coating, the sample was pre-baked in an oven at 180°C for 30 minutes. The samples were then exposed using an electron beam exposure system. The exposure pattern is edited by GDSII software, including the line structure with a minimum line width of 60nm. Exposure parameters: write field...

Embodiment 3

[0044] The preparation method of the present embodiment is identical with embodiment 6, but condition is as follows:

[0045] Fabrication of nano-gold electrodes on insulating glass substrate 1: After cleaning the 0.5mm thick glass substrate with acetone, alcohol and deionized water with ultrasonic cleaning and drying with dry nitrogen, bake it on a hot plate at 180°C for 20 minute. A layer of 60nm aluminum film 2 is deposited on a sapphire substrate using magnetron sputtering coating equipment, and then a layer of electron beam resist 3 with a thickness of about 200nm is spin-coated on the aluminum film. The electron beam resist is selected from ZEP520 glue purchased in the market. After spin coating, the samples were pre-baked on a hot plate at 200°C for 2 minutes. The samples were then exposed using an electron beam exposure system. The exposure pattern is edited by L-edit software, including a line structure with a minimum line width of 80nm and a minimum line spacing o...

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Abstract

The invention relates to a method for preparing nanometer structures on an insulating substrate. The method comprises the following steps of: selecting and disposing the insulating substrate; spin-coating electronic anti-corrosion adhesive after an aluminium film with suitable thickness is aggraded on the substrate by coating equipment; designing the shape and the dimension of the required surface nanometer structure according to the requirement; realizing the precise exposal of the design graphics on the surface of the substrate in an electron beam exposal system; realizing suitable undercutstructure at the exposal line position in a dual-layer structure of electronic anti-corrosion adhesive and aluminium by controlling the process parameters such as temperature of alkali liquor, consistency of alkali liquor and corrosion disposal time; finally realizing the sediment of nanometer structure material by the coating equipment and completing the preparation of the nanometer structure bysolubilisation process and alkali liquor disposal. The method overcomes the charge accumulation effect of the insulating substrate in the electron beam exposal system and realizes the exposal of the nanometer graphics; meanwhile, the prepared undercut structure can extremely effectively assist the subsequent solubilisation process, thus ensuring that the surface nanometer structure is effectively, integrally and precisely realized on the insulating substrate material.

Description

technical field [0001] The invention relates to a manufacturing method for realizing a nanostructure on an insulating substrate, in particular to a method for preparing a metal nanostructure on an insulating substrate material by using electron beam exposure technology. Background technique [0002] Subwavelength-sized artificial materials with special electromagnetic propagation properties, such as high-frequency magnetically responsive materials, left-handed materials, etc., have been the focus of close attention in recent years. This material is usually realized by fabricating subwavelength-sized metal artificial structures on the surface of the substrate medium. Therefore, in order to achieve applications in the near-infrared and visible light bands, it is necessary to realize submicron or nanoscale artificial structures on the substrate. Using electron beam exposure technology, sub-micron or nano-scale pattern transfer can be realized on substrates with good conductivi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/00H01L21/027G06F17/50
Inventor 顾长志夏晓翔杨海方李俊杰罗强金爱子
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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