A
system and method for finding
electromigration (EM), self heat (SH) and
voltage drop / droop violations of an
integrated circuit, when its design and electrical characterization are not complete, are disclosed. The method includes analyzing polygons for average, root-mean-square (RMS) and Ipeak current densities and voltages of a
mask layout block and obtaining one or more
electromigration, self heat and / or
voltage drop / droop rules associated with the polygon from a technology and an external constraints file. The
system reads the available design
simulation data to calculate the average, RMS and Ipeak current densities and voltages, and estimates the current densities and voltages when no data available. The method also includes topological analysis of the
mask layout and analysis of the electrical circuit elements of the design. The method finds the polygons where the current densities are higher than
electromigration and self heat rules as taken from technology or external constraints file. The method also finds the polygons where the current densities are higher than in other polygons, by the defined threshold. The method also finds the nodes where the
voltage drop / droop is larger than the rule. The method also finds the polygons where the
voltage drop / droop is larger than in other polygons by the defined threshold. The method and
system work on GDSII, GDSIII format files and on industry standards
layout editors'
database.