Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing material with highly gradient surface micronano structure

A technology of micro-nano structure and target materials, applied in the field of nano-material processing, to achieve the effects of rapid construction, breakthrough of space limitations, and simple operation

Inactive Publication Date: 2010-06-16
PEKING UNIV
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these methods are difficult to construct an ideal structure with a high degree of gradient and a smooth surface.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing material with highly gradient surface micronano structure
  • Method for preparing material with highly gradient surface micronano structure
  • Method for preparing material with highly gradient surface micronano structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

Embodiment 2

Embodiment 3

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for preparing a material with a highly gradient surface micronano structure. The method comprises the following steps of: 1) coating an electron beam resist on a substrate to obtain an electron beam resist layer, and baking the electron beam resist layer ; 2) exposing, developing and fixing electron beams; 3) coating anisole to obtain an anisole layer, and baking the anisole layer; 4) depositing a target material on the anisole layer to obtain a target material layer; 5) attaching the target material layer to another substrate; and 6) separating the target material layer from the electron beam resist layer. The method has the advantages of simple and convenient operation mode, wide material application range, customized shape and position of a pattern, smooth structural surface and high controllability and repeatability, and can play an important role in fields of surface plasmon research, self assembly of nano particles, utilization of solar energy, micro-flow research and the like.

Description

technical field The invention relates to the field of nanomaterial processing, and relates to a method for preparing a material with a micro-nano structure, in particular to a method for preparing a material with a surface micro-nano structure. Background technique The structure of surface micro- and nanostructures is of great significance in many fields, and has played a huge role in surface plasmons, self-assembly of nanoparticles, solar energy utilization, and microfluidic devices (H. Ditlbacher, J.R. Krenn, G. Schider et al. Applied Physics Letters, 81, 1762 (2002); M.J. Lee, J. Kim and Y.S. Nanotechnology, 19, 355301 (2008); A. Lasagni, M. Nejati, R. Clasen et al. Advanced Functional Materials, 8, 580 (2006); S. Billat, K. Kliche, R. Gronmaier et al. Sensors and Actuators A: Physical, 145-146, 66 (2008)). Along with the trend of device miniaturization, various micro-nano-fabrication methods have been greatly developed, so as to obtain simple and precise control of the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B82B3/00
Inventor 张洋朱新利俞大鹏
Owner PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products