A near-ultraviolet LED lamp with novel electron blocking layer, and preparation method thereof

An electron blocking layer and near-ultraviolet technology, which is applied in the direction of circuits, electrical components, nanotechnology for materials and surface science, etc., can solve the problem that the output power is only the input power, so as to improve the efficiency of hole injection and improve the efficiency of electron holes. Hole recombination luminous efficiency, the effect of improving luminous efficiency
CN105932130AActive Publication Date: 2016-09-07东莞市中晶半导体科技有限公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
东莞市中晶半导体科技有限公司
Publication Date
2016-09-07

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Abstract

The invention provides a near-ultraviolet LED lamp with a novel electron blocking layer, and a preparation method thereof. A near-ultraviolet LED epitaxial wafer structure comprises a graphical sapphire substrate, a low-temperature GaN nucleating layer, a high-temperature non-doped GaN buffer layer, an n-type GaN layer, an InGaN / AlGaN multiple-quantum well active layer, a p-type AlGaN / InGaN superlattice electron blocking layer, a low-temperature lightly-doped p-type AlInGaN hole expansion layer, a high-temperature p-type GaN layer and a p-type InGaN contact layer. The electron blocking layer adopts a p-type Al<y1>Ga<1 y1>N / In<x1>Ga<1 x1>N superlattice structure. Along with the increase of the number of superlattice periods, the InGaN thickness is reduced step by step, the Mg doping concentration is increased step by step and the hole concentration is increased. By the invention, the hole injection efficiency is effectively improved and the electron hole recombination luminous efficiency is enhanced, so the near-ultraviolet LED luminous efficiency is increased.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor optoelectronics, a near-ultraviolet light-emitting diode and a preparation method thereof, in particular to a novel electron blocking layer (i.e., a p-type AlGaN / InGaN electron blocking layer) having a stepwise change in its doping concentration and Al composition. ) near-ultraviolet LED and a preparation method thereof. Background technique

[0002] Ultraviolet semiconductor light sources are mainly used in biomedicine, anti-counterfeiting identification, purification (water, air, etc.), computer data storage, and military affairs. With the advancement of ultraviolet light technology, new applications will continue to appear to replace the original technology and products, and ultraviolet light LEDs have broad market application prospects. The ultraviolet light source will be developed for general lighting, optical tweezers, plant growth, oil pipeline leak detection, archaeological applica...

Claims

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