32results about How to "Improve composite luminous efficiency" patented technology

The invention discloses a transverse zinc oxide nanorod array light emitting diode. The transverse zinc oxide nanorod array light emitting diode comprises a sapphire substrate (101), a silicon dioxide insulating layer (102) and a gallium nitride buffer layer (103) which are sequentially arranged from bottom to top. A p-region electrode (106) is arranged on one lateral side of a rectangular etching groove in the gallium nitride buffer layer (103), a piece of blocky n<+>-ZnO (104) is arranged on the other lateral side, opposite to the lateral side, of the rectangular etching groove, and an n-region electrode (105) of an ITO-ZnO film is arranged on the blocky n<+>-ZnO (104). The transverse zinc oxide nanorod array light emitting diode further comprises a ZnO nanorod array (107), an n-type region and a p-type region are arranged at the two ends of the ZnO nanorod array respectively, and meanwhile the ZnO nanorod array is connected with the p-region electrode (106) and the blocky n<+>-ZnO (104) through the p-type region and the n-type region respectively. The transverse zinc oxide nanorod array light emitting diode is high in both light extraction efficiency and electron injection efficiency and meanwhile low in cost.

The invention discloses a UV light emitting diode with a compound electronic barrier layer structure. The light emitting diode, successively from the bottom to the top, includes a substrate (101), a low-temperature AlN nucleation layer (102), a high-temperature AlN buffer layer (103), an n type AlGaN layer (104), an Al<x>Ga<1-x>N / Al<y>Ga<1-y>N multi-quantum well active region (105), and a p-AlsIntGa1-s-tN / p-AlzGa1-zN compound electronic barrier layer (106) consisting of a p-Al<s>In<t>Ga<1-s-t> layer (106) and a p-Al<z>Ga<1-z>N layer. The diode provided can solve the problem that a conventional electronic barrier layer structure generates a parasitic electronic inversion layer between the last quantum well barrier and an electronic barrier layer.

The invention discloses a growth method for a light-emitting diode epitaxial wafer and an epitaxial wafer, belonging to the technical field of a semiconductor. The growth method comprises the following steps of: sequentially growing a low-temperature buffer layer, a non-doped GaN layer and an N-type layer on a substrate; alternatively growing a first InGaN pit layer and a first GaN barrier layer on the N-type layer to form a first active layer; alternatively growing a second InGaN pit layer and a second GaN barrier layer on the first active layer to form a second active layer; and sequentially growing an electron blocking layer and a P-type layer on the second active layer, wherein the growth pressure of the second active layer is lower than the growth pressure of the first active layer, the growth speed of the second active layer is lower than the growth speed of the first active layer, the thickness of the second active layer is smaller than the thickness of the first active layer, and the growth pressure, the growth speed and the thickness of the second InGaN pit layer are gradually reduced, slowed and decreased along the growth direction of the light-emitting diode epitaxial wafer. The epitaxial wafer is high in luminous efficiency.

The invention discloses a high-brightness light-emitting diode based on an AIN / PSS composite substrate and a preparation method of the high-brightness light-emitting diode. The high-brightness light-emitting diode comprises the AlN / PSS composite substrate, a u-type GaN merging layer, an n-type GaN layer, a low-temperature GaN V-pits layer, an active region, an electron blocking layer, a high-temperature p-type GaN layer and a contact layer which are sequentially stacked from bottom to top. The high-brightness light-emitting diode provided by the invention comprises the u-GaN merging layer of anovel structure, the V-pits layer and the active region; and therefore, the crystal quality of an epitaxial layer can be effectively improved, the stress of the active region can be effectively relieved, current expansion in a horizontal direction can be improved, the light-emitting efficiency of the light-emitting diode can be improved, and the brightness of the prepared light-emitting diode ishigh.

The invention discloses a gallium nitride-based light-emitting diode epitaxial wafer and a preparation method thereof, and belongs to the technical field of semiconductors. A gallium nitride-based light-emitting diode comprises a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer; the N-type semiconductor layer, the active layer and the P-type semiconductorlayer are sequentially stacked on the substrate; the active layer comprises a plurality of periodic structures which are stacked in sequence, wherein each periodic structure comprises quantum wells and quantum barriers which are stacked in sequence; and the periodic structure further comprises a plurality of metal nanoparticles laid between the quantum wells and the quantum barriers. The pluralityof metal nanoparticles are laid on the surfaces of the quantum wells, and electrons injected into the active layer, electrons in the quantum wells, and photons generated by hole recombination react with each other on the surfaces of the metal nanoparticles, so that the plurality of metal nanoparticles play a role of surface plasmon polariton, the composite light-emitting efficiency of electrons and holes in the quantum wells can be increased, and the light-emitting efficiency of the whole LED is improved.

The invention discloses a gallium nitride-based light emitting diode epitaxial wafer and a preparation method thereof, and belongs to the technical field of semiconductors. The gallium nitride-based light emitting diode epitaxial wafer comprises a substrate, a buffer layer, an N-type semiconductor layer, an active layer, and a P-type semiconductor layer, and the buffer layer, the N-type semiconductor layer, the active layer, and the P-type semiconductor layer are sequentially stacked on the substrate; the active layer comprises a plurality of quantum wells and a plurality of quantum barriers,and the plurality of quantum wells and the plurality of quantum barriers are alternately stacked; and at least one boron hydride layer is inserted into the quantum barrier. According to the epitaxialwafer and the preparation method in the invention, at least one boron hydride layer is inserted into the quantum barrier, and the thermal conductivity of the boron hydride layer is good, so the heat generated by combined luminescence of electrons and holes in the active layer can be conducted out in time to prevent the junction temperature of the active layer from rising, thereby facilitating theimprovement of combined luminous efficiency of the electrons and holes, and further improving the luminous efficiency of the LED, and the gallium nitride-based light emitting diode epitaxial wafer isparticularly suitable for LEDs at a high current density.

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, belonging to the technical field of semiconductors. The light-emitting diode epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer, and a P-type semiconductor layer, and the N-type semiconductor layer, the active layer, and the P-type semiconductor layer are sequentially stacked on the substrate above; the active layer includes a plurality of composite structures stacked in sequence, and each composite structure includes a well layer and a barrier layer stacked in sequence; the material of the well layer is undoped indium gallium nitride, and the The material of the barrier layer is undoped gallium nitride; the composite structure also includes a transition layer, and the transition layer is arranged between the well layer and the barrier layer; the transition layer includes first sublayers stacked in sequence and the second sublayer, the material of the first sublayer is undoped aluminum indium nitride, and the material of the second sublayer is undoped aluminum nitride. The invention can improve the photoelectric performance of the LED.

The invention discloses a gallium nitride-based light emitting diode epitaxial wafer and a growth method thereof, belonging to the field of semiconductor technology. The gallium nitride-based light emitting diode epitaxial wafer comprises a substrate, buffer layer, N-type layer, active layer, low temperature P-type layer, an electron barrier layer and a high temperature P-type layer, The buffer layer, the N-type layer, the active layer, the low-temperature P-type layer, the electron blocking layer and the high-temperature P-type layer are laminated on the substrate in turn, the material of thelow-temperature P-type layer adopts P-type doped aluminum gallium nitride, and the material of the electron blocking layer adopts P-type doped aluminum indium gallium nitrogen layer. By changing thematerial of the low-temperature P-type layer to P-type doped aluminum gallium nitride, The barrier height of the low temperature P-type layer is increased by using the higher barrier of the aluminum component, and the material of the electron barrier layer is changed into the P-type doped Al-In-Ga-N layer. The barrier height of the electron barrier layer is decreased by using the lower barrier ofthe indium component, and finally the luminescence efficiency of the LED is improved.

The invention provides a method for preparing a p-type AlGaN / AlInGaN electron blocking layer near ultraviolet LED with doping density and Al component in stepwise change. In an LED epitaxial structure, an electron blocking layer adopts a p-type Aly1Ga1-y1N / AlyInx1Ga1-x1N superlattice structure, and the Al component is reduced from 0.2 to 0.05 stepwisely with the increase of superlattice cycle number; Mg doping density increases stepwisely with the increase of superlattice cycle number, and corresponding hole concentration increases from 0.5*10<17> cm<3> to 2* 10<17> cm<3>; the thickness range of the AlGaN barrier layer is 2-5 nm; and the thickness of the GaN well layer is 2 nm-5 nm. Through the design of the novel ultraviolet LED electronic blocking layer structure, hole injection efficiency can be improved effectively, and electron-hole recombination luminescence efficiency is improved, and thus near ultraviolet LED luminescence efficiency is improved.

The invention discloses an epitaxial wafer of a light-emitting diode and a manufacturing method thereof, belonging to the technical field of semiconductors. The epitaxial wafer includes a substrate and a buffer layer, an undoped gallium nitride layer, an N-type gallium nitride layer, a light-emitting layer and a P-type gallium nitride layer stacked sequentially on the substrate, and the light-emitting layer includes A plurality of quantum well layers and a plurality of quantum barrier layers, the plurality of quantum well layers and the plurality of quantum barrier layers are alternately stacked, the quantum barrier layer is a gallium nitride layer, and the plurality of quantum well layers The at least three quantum well layers closest to the N-type gallium nitride layer are the first quantum well layers, and the quantum wells in the plurality of quantum well layers except the first quantum well layer The second quantum well layer is a second quantum well layer, the first quantum well layer is an undoped InGaN layer, and the second quantum well layer includes a P-type doped InGaN layer. The invention increases the number of holes in the quantum well layer and improves the efficiency of compound light emission of holes and electrons.

The invention discloses a light-emitting diode epitaxial wafer and a manufacture method thereof and belongs to the technical field of semiconductors. The light-emitting diode epitaxial wafer comprisesan electronic barrier layer that includes superlattice structure of N cycles; the superlattice structure of each cycle includes an InxGa1-xN layer and an AlyG1-yN layer, wherein the InxGa1-xN layer is formed by growth at 900-950 DEG C; lattice quality of a multi-quantum well layer can be improved, composite light-emitting efficiency of electrons and holes in the multi-quantum well layer can be improved. In addition, the presence of In brings down activation energy of Mg and increases hole concentration of a P-type layer. Each AlyG1-yN layer is formed by growth at 950-980 DEG C, barrier heightof the AlyG1-yN layer is increased, and electrons are avoided overflowing to the P-type layer; the content of Al gradually decreases or increases, so that electrons can be avoided overflowing to theP-type layer at the premise of reducing the blocking action of holes, and light-emitting efficiency of a diode is improved.

The invention discloses a gallium nitride-based light-emitting diode epitaxial wafer and a growth method thereof, belonging to the technical field of semiconductors. The gallium nitride-based light-emitting diode epitaxial wafer includes a substrate, an N-type semiconductor layer, a stress release layer, an active layer, and a P-type semiconductor layer, and the N-type semiconductor layer, the stress release layer, and the active layer and the P-type semiconductor layer are sequentially stacked on the substrate, and the gallium nitride-based light-emitting diode epitaxial wafer further includes an electronic adjustment layer, and the electronic adjustment layer is arranged on the stress release layer and the active layer Between; the material of the electronic adjustment layer is N-type doped aluminum gallium nitride, and the doping concentration of the N-type dopant in the electronic adjustment layer is along the stacking direction of the gallium nitride-based light-emitting diode epitaxial wafer slowing shrieking. The invention can improve the recombination luminous efficiency of electrons and holes in the active layer.