A kind of growth method of light-emitting diode epitaxial wafer and epitaxial wafer
A technology for light-emitting diodes and a growth method, which is applied to the growth method of light-emitting diode epitaxial wafers and the field of epitaxial wafers, can solve problems such as limited luminous efficiency of LEDs, and achieve the effects of being beneficial to two-dimensional growth, improving efficiency, and increasing light extraction efficiency.
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Embodiment 1
[0026] Embodiments of the present invention provide a method for growing light-emitting diode epitaxial wafers, see figure 1 , the growth method includes:
[0027] Step 10: pretreating the substrate. This step 10 is an optional step.
[0028] Alternatively, the substrate can be sapphire.
[0029] Specifically, this step 10 may include:
[0030] Under the hydrogen atmosphere, the substrate was treated at high temperature for 5-8 minutes. Wherein, the temperature of the reaction chamber can be 1000-1100° C., and the pressure of the reaction chamber can be controlled at 200-500 torr.
[0031] Step 11: growing a low-temperature buffer layer, an undoped GaN layer, and an N-type layer on the substrate in sequence.
[0032] In this embodiment, Veeco K465i / C4MOCVD (Metal Organic Chemical Vapor Deposition, Metal Organic Chemical Vapor Deposition) equipment is used to realize the growth method of LED epitaxial wafers. Using high-purity H 2 (hydrogen) or high-purity N 2 (Nitrogen...
Embodiment 2
[0074] An embodiment of the present invention provides a light emitting diode epitaxial wafer, the light emitting diode epitaxial wafer is obtained by the growth method of the light emitting diode epitaxial wafer provided in the first embodiment, see figure 2 , the light-emitting diode epitaxial wafer includes a substrate 1, and a low-temperature buffer layer 2, an undoped GaN layer 3, an N-type layer 4, a first active layer 5, and a second active layer 6 sequentially stacked on the substrate 1 , the electron blocking layer 7, and the P-type layer 8.
[0075] In this embodiment, the first active layer 5 is formed of alternately grown first InGaN well layers 51 and first GaN barrier layers 52 . The second active layer 6 is formed of alternately grown second InGaN well layers 61 and second GaN barrier layers 62 .
[0076] Wherein, the growth pressure of the second active layer 6 is lower than the growth pressure of the first active layer 5, the growth speed of the second activ...
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