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Light-emitting diode epitaxial wafer and fabrication method thereof

A technology of light-emitting diodes and epitaxial wafers, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of reducing the recombination luminous efficiency of electrons and holes, and improve the recombination luminous efficiency, reduce the heterojunction mismatch, Mitigating the effect of the quantum-confined Stark effect

Active Publication Date: 2019-02-15
HC SEMITEK ZHEJIANG CO LTD
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Problems solved by technology

[0006] The embodiment of the present invention provides a light-emitting diode epitaxial wafer and a preparation method thereof, which can solve the problem that the lattice mismatch between quantum wells and quantum barriers in the prior art reduces the recombination luminous efficiency of electrons and holes in the quantum wells

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  • Light-emitting diode epitaxial wafer and fabrication method thereof
  • Light-emitting diode epitaxial wafer and fabrication method thereof
  • Light-emitting diode epitaxial wafer and fabrication method thereof

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Embodiment Construction

[0027] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0028] An embodiment of the present invention provides a light emitting diode epitaxial wafer. figure 1 A schematic structural diagram of a light emitting diode epitaxial wafer provided by an embodiment of the present invention. see figure 1 , the light-emitting diode epitaxial wafer includes a substrate 10, an N-type semiconductor layer 20, an active layer 30, and a P-type semiconductor layer 40, and the N-type semiconductor layer 20, the active layer 30, and the P-type semiconductor layer 40 are sequentially stacked on the substrate 10 superior.

[0029] figure 2 A schematic structural diagram of an active layer provided by an embodiment of the present invention. see figure 2 , in this embodiment, the active layer 30 includes ...

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Abstract

The invention discloses a light-emitting diode epitaxial wafer and a fabrication method thereof, and belongs to the technical field of semiconductors. The light-emitting diode epitaxial wafer comprises a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, wherein the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially laminated on the substrate, the active layer comprises a plurality of composite structures which are sequentially laminated, each composite structure comprises a well layer and a barrier layer which are sequentially laminated, the material of the well layer employs non-doped InGaN, the material of the barrier layer employs non-doped GaN, the composite structure also comprises a transition layer, the transition layer is arranged between the well layer and the barrier layer, the transition layer comprises a first sub-layer and a second sub-layer which are sequentially laminated, the material of the first sub-layer employs non-doped AlInN, and the material of the second sub-layer employs non-doped AIN. By the light-emitting diode epitaxial wafer, the photoelectric performance of an LED can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. In the development of the light-emitting diode industry, gallium nitride (GaN), a wide bandgap (Eg>2.3eV) semiconductor material, has developed rapidly and is widely used in lighting, display screens, signal lights, backlights, toys and other fields. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing LED epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, and the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially stacked on the substrate. The active layer includes multiple qu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/12H01L33/32H01L33/00
CPCH01L33/007H01L33/06H01L33/12H01L33/32
Inventor 乔楠李昱桦胡加辉李鹏
Owner HC SEMITEK ZHEJIANG CO LTD
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