Green light emitting diode epitaxial wafer and preparation method thereof

A technology of light-emitting diodes and manufacturing methods, which can be applied to electrical components, circuits, semiconductor devices, etc., and can solve problems such as large lattice mismatches

Inactive Publication Date: 2019-03-29
HC SEMITEK CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Embodiments of the present invention provide a green light-emitting diode epitaxial wafer and a manufacturing method thereof, which can solve the problem of large lattice mismatch between quantum wells and quantum barriers in the prior art

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  • Green light emitting diode epitaxial wafer and preparation method thereof
  • Green light emitting diode epitaxial wafer and preparation method thereof
  • Green light emitting diode epitaxial wafer and preparation method thereof

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Embodiment Construction

[0026] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0027] An embodiment of the present invention provides a green light emitting diode epitaxial wafer. figure 1 A schematic structural diagram of a green light-emitting diode epitaxial wafer provided by an embodiment of the present invention. see figure 1 , the green light emitting diode epitaxial wafer includes a substrate 10, an N-type semiconductor layer 20, an active layer 30 and a P-type semiconductor layer 40, and the N-type semiconductor layer 20, the active layer 30 and the P-type semiconductor layer 40 are sequentially stacked on the substrate Bottom 10 on top.

[0028] figure 2 A schematic structural diagram of an active layer provided by an embodiment of the present invention. see figure 2 , the active layer 30 includes...

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Abstract

The invention discloses a green light emitting diode epitaxial wafer and a preparation method thereof and belongs to the technical field of a semiconductor. The green light emitting diode epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, wherein the N-type semiconductor layer, the active layer and the P type semiconductor layer are sequentially laminated on the substrate, the active layer includes multiple quantum wells and multiple quantum barriers, the multiple quantum wells and the multiple quantum barriers are arranged inan alternate lamination mode, the material of the quantum wells employs non-doped MoS2, and the material of the quantum barriers employs non-doped InxAl1-xN, and the x is greater than 0 and smaller than 0.3. The epitaxial wafer is advantaged in that the non-doped MoS2 is utilized as the material of the quantum wells, the non-doped InxAl1-xN is utilized as the material of the quantum barriers, 0<x<0.3, lattice matching between the InxAl1-xN and the MoS2 is better, and the polarization effect of LEDs can be effectively alleviated.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a green light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. Gallium nitride (GaN) has good thermal conductivity, and has excellent characteristics such as high temperature resistance, acid and alkali resistance, and high hardness, so that gallium nitride (GaN)-based LEDs have received more and more attention and research. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing GaN-based LED epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, and the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially stacked on the substrate. The subst...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/00
CPCH01L33/005H01L33/06
Inventor 郭炳磊李鹏胡加辉
Owner HC SEMITEK CORP
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