A kind of epitaxial wafer of light-emitting diode and its manufacturing method

A technology of light-emitting diodes and manufacturing methods, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low electron recombination luminous efficiency, and achieve the effects of improving internal quantum efficiency, improving efficiency, and increasing the number of holes
CN107331744BActive Publication Date: 2019-05-07HC SEMITEK CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
HC SEMITEK CORP
Publication Date
2019-05-07

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Abstract

The invention discloses an epitaxial wafer of a light-emitting diode and a manufacturing method thereof, belonging to the technical field of semiconductors. The epitaxial wafer includes a substrate and a buffer layer, an undoped gallium nitride layer, an N-type gallium nitride layer, a light-emitting layer and a P-type gallium nitride layer stacked sequentially on the substrate, and the light-emitting layer includes A plurality of quantum well layers and a plurality of quantum barrier layers, the plurality of quantum well layers and the plurality of quantum barrier layers are alternately stacked, the quantum barrier layer is a gallium nitride layer, and the plurality of quantum well layers The at least three quantum well layers closest to the N-type gallium nitride layer are the first quantum well layers, and the quantum wells in the plurality of quantum well layers except the first quantum well layer The second quantum well layer is a second quantum well layer, the first quantum well layer is an undoped InGaN layer, and the second quantum well layer includes a P-type doped InGaN layer. The invention increases the number of holes in the quantum well layer and improves the efficiency of compound light emission of holes and electrons.
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Description

Technical field

[0001] The present invention relates to the field of semiconductor technology, in particular to an epitaxial wafer of a light emitting diode and a manufacturing method thereof. Background technique

[0002] The semiconductor light-emitting diode represented by gallium nitride (English: Light Emitting Diode, abbreviation: LED) has excellent characteristics such as large band gap, high electron saturation drift speed, high temperature resistance, and high power capacity. Its ternary alloy InGaN The band gap is continuously adjustable from 0.7ev to 3.4ev, and the emission wavelength covers the entire area of ​​visible light and ultraviolet light, which has broad prospects in the emerging optoelectronic industry.

[0003] The epitaxial wafer is a semi-finished product in the manufacturing process of light-emitting diodes. The existing epitaxial wafer includes a sapphire substrate and a buffer layer, an undoped gallium nitride layer, an N-type gallium nitride layer, a l...

Claims

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