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A kind of epitaxial wafer of light-emitting diode and its manufacturing method

A technology of light-emitting diodes and manufacturing methods, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low electron recombination luminous efficiency, and achieve the effects of improving internal quantum efficiency, improving efficiency, and increasing the number of holes

Active Publication Date: 2019-05-07
HC SEMITEK CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem of low efficiency of hole and electron recombination light emission in the prior art, an embodiment of the present invention provides an epitaxial wafer of a light emitting diode and a manufacturing method thereof

Method used

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  • A kind of epitaxial wafer of light-emitting diode and its manufacturing method
  • A kind of epitaxial wafer of light-emitting diode and its manufacturing method
  • A kind of epitaxial wafer of light-emitting diode and its manufacturing method

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Embodiment 1

[0029] The embodiment of the present invention provides an epitaxial wafer of a light emitting diode, see figure 1 The epitaxial wafer includes a substrate 1 and a buffer layer 2, an undoped gallium nitride layer 3, an N-type gallium nitride layer 4, a light-emitting layer 5, and a P-type gallium nitride layer 6 sequentially stacked on the substrate 1.

[0030] In this embodiment, see figure 2 The light emitting layer 5 includes a plurality of quantum well layers 51 and a plurality of quantum barrier layers 52. The plurality of quantum well layers 51 and the plurality of quantum barrier layers 52 are alternately stacked and arranged, and the quantum barrier layer 52 is a gallium nitride layer. At least three quantum well layers 51 of the plurality of quantum well layers 51 that are closest to the N-type gallium nitride layer 4 are the first quantum well layers 51a, and the plurality of quantum well layers 51 except for the first quantum well layer 51a The quantum well layer 51 is...

Embodiment 2

[0054] The embodiment of the present invention provides an epitaxial wafer for a light emitting diode, and the epitaxial wafer provided in this embodiment is a specific implementation of the epitaxial wafer provided in the first embodiment.

[0055] In this embodiment, the number of layers of the first quantum well layer is 3, and the number of layers of the second quantum well layer is 6, and the doping concentration of the P-type dopant in each second quantum well layer remains unchanged, and The doping concentrations of the P-type dopants in the plurality of second quantum well layers are equal.

Embodiment 3

[0057] The embodiment of the present invention provides an epitaxial wafer for a light emitting diode, and the epitaxial wafer provided in this embodiment is another specific implementation of the epitaxial wafer provided in the first embodiment.

[0058] In this embodiment, the number of layers of the first quantum well layer is 3, and the number of layers of the second quantum well layer is 6, and each second quantum well layer includes a first sublayer, a second sublayer, and a first sublayer that are sequentially stacked. Three sublayers, the second sublayer is a P-type doped indium gallium nitride layer, the first and third sublayers are undoped indium gallium nitride layers, the thickness of the first sublayer and the thickness of the third sublayer The thickness is equal, the thickness of the second sub-layer is 1 nm, and the doping concentration of the P-type dopant in the plurality of second quantum well layers is equal.

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Abstract

The invention discloses an epitaxial wafer of a light-emitting diode and a manufacturing method thereof, belonging to the technical field of semiconductors. The epitaxial wafer includes a substrate and a buffer layer, an undoped gallium nitride layer, an N-type gallium nitride layer, a light-emitting layer and a P-type gallium nitride layer stacked sequentially on the substrate, and the light-emitting layer includes A plurality of quantum well layers and a plurality of quantum barrier layers, the plurality of quantum well layers and the plurality of quantum barrier layers are alternately stacked, the quantum barrier layer is a gallium nitride layer, and the plurality of quantum well layers The at least three quantum well layers closest to the N-type gallium nitride layer are the first quantum well layers, and the quantum wells in the plurality of quantum well layers except the first quantum well layer The second quantum well layer is a second quantum well layer, the first quantum well layer is an undoped InGaN layer, and the second quantum well layer includes a P-type doped InGaN layer. The invention increases the number of holes in the quantum well layer and improves the efficiency of compound light emission of holes and electrons.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to an epitaxial wafer of a light emitting diode and a manufacturing method thereof. Background technique [0002] The semiconductor light-emitting diode represented by gallium nitride (English: Light Emitting Diode, abbreviation: LED) has excellent characteristics such as large band gap, high electron saturation drift speed, high temperature resistance, and high power capacity. Its ternary alloy InGaN The band gap is continuously adjustable from 0.7ev to 3.4ev, and the emission wavelength covers the entire area of ​​visible light and ultraviolet light, which has broad prospects in the emerging optoelectronic industry. [0003] The epitaxial wafer is a semi-finished product in the manufacturing process of light-emitting diodes. The existing epitaxial wafer includes a sapphire substrate and a buffer layer, an undoped gallium nitride layer, an N-type gallium nitride layer, a l...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/32H01L33/12H01L33/00
CPCH01L33/0075H01L33/06H01L33/12H01L33/32
Inventor 刘华容万林胡加辉
Owner HC SEMITEK CORP
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