24results about How to "Reduce injection" patented technology

The invention belongs to the field of organic electroluminescent materials, and discloses a blue light host material, a preparation method and an organic electroluminescent device. The structure of the blue light host material is as shown in a chemical formula I: # imgabs0 #. After the blue light host material provided by the invention is applied to the organic electroluminescent device, the driving voltage of the photoelectric device can be reduced, the luminous efficiency of the photoelectric device can be improved, and the service life of the photoelectric device can be prolonged.

The utility model discloses a polycarbonate plate with air permeability, which relates to the technical field of building boards, and comprises a top substrate and a bottom substrate, the bottom of the top substrate is fixedly connected with the top of the bottom substrate, the top of the top substrate is provided with a top air groove, the inner side wall of the top air groove is provided with a side air groove, and the bottom of the bottom substrate is provided with a side air groove. A bottom air groove is formed in the bottom of the top base plate, the top air groove, the bottom air groove and the side air grooves communicate with one another, and a plurality of drainage grooves and vent grooves are formed in the top of the bottom base plate. The polycarbonate plate with the air permeability is provided with the top air groove, the bottom air groove, the side air groove, the vent groove and the drainage groove, when it rains, rainwater enters from the top air groove and flows into the drainage groove to be discharged, and gas enters from the top air groove, then passes through the side air groove and the bottom air groove and finally flows out from the vent groove; according to the structure, the air permeability of the polycarbonate plate can be improved, air circulation is improved, and stuffiness is reduced.

Embodiments of the present invention provide a power semiconductor device, a related circuit, a chip, an electronic device, and a preparation method. The semiconductor device optimizes a front structure of a diode region, and reduces carrier concentration in the diode region by reducing a thickness of a semiconductor layer used as a positive electrode region or a negative electrode region in the region. In this way, a reverse recovery charge amount is reduced, a reverse recovery loss Err of a diode is reduced, and switching efficiency of an RC-IGBT is finally improved.

The application discloses a kind of liquid bag automatic filling heat sealing machine and its operating method, including rack;Liquid inlet device, including liquid inlet pipe, setting on the filling mechanism and exhaust mechanism of rack, filling mechanism is connected with the liquid inlet end of liquid inlet pipe, exhaust mechanism is connected with the liquid suction end of liquid inlet pipe, liquid inlet pipe is equipped with the clamping stop component of pressing liquid inlet pipe;Heat sealing device, including with the branch pipe of liquid inlet pipe connection, liquid level sensor and for heat sealing branch pipe end heat sealing component, the liquid inlet end of branch pipe is located between two adjacent clamping stop components.This scheme reduces the contact of liquid bag and external air during filling process, reduces the pollution to blood in liquid bag;Exhaust mechanism is used to exhaust liquid in liquid bag, reduce the injection of air in liquid bag, prevent that there is obvious bubble after liquid bag filling, cause bubble damage to save the cell liquid after freezing;Multiple heat sealing devices are in parallel, when one bag is exhausted and heat sealed, the next bag is filled simultaneously.Improve filling heat sealing efficiency, and the degree of automation is higher.

The invention discloses a compressor lower cover, a vertical compressor and an air conditioner, the compressor lower cover comprises a lower cover body, the lower cover body is provided with an oil pool for containing refrigeration oil, the oil pool is of a conical structure, and the wider end of the oil pool is located above the narrower end of the oil pool; when the compressor is in a horizontal or inclined working state, the oil level of refrigeration oil in the oil pool is higher than the effective surface of an oil pump of the compressor. According to the compressor, the oil pool is designed to be of the conical structure, compared with the prior art, in order to achieve the same horizontal state oil liquid level height, less refrigerant oil needs to be injected, the injection amount of the refrigerant oil is reduced, and then the overall weight of the compressor is reduced.

This invention relates to the field of data monitoring technology, specifically to a business operation monitoring system based on AI data sharing, comprising: a federated learning module for aggregating model parameters of multiple business systems through a dynamic differential privacy mechanism to generate an anomaly detection model; and a knowledge graph module for constructing a dynamic service dependency graph based on logs, performance indicators, and user behavior data of the multiple business systems. In use, this invention combines a dynamic differential privacy mechanism with local training, achieving the goal of making user data available but invisible, meeting legal compliance requirements such as GDPR and data export restrictions. By automatically adjusting noise injection through a combination of information gain and differential privacy budget, the system improves model aggregation accuracy while avoiding privacy leaks. High-contribution nodes receive less noise injection, helping their high-quality local models to play a greater role in the global model. An automatic pause mechanism with an upper limit is set to prevent sensitive systems from exceeding acceptable privacy leakage limits due to excessive participation.

The application relates to the technical field of semiconductors, and provides a gradient-doped composite JTE terminal structure. The structure comprises a substrate, an epitaxial layer arranged on the substrate, an active region arranged in the epitaxial layer, and an edge protection region arranged in the epitaxial layer and surrounding the active region. The edge protection region comprises a plurality of JTE regions and a plurality of reverse-doped regions, the plurality of JTE regions are arranged in the epitaxial layer in a direction away from the active region, the plurality of reverse-doped regions are embedded in the JTE regions, the reverse-doped regions and the JTE regions have semiconductor materials of different conduction types, and the doping concentration of the reverse-doped regions is in an increasing distribution in the direction away from the active region. The application splits the electric field peak at the main junction into a plurality of electric field peaks, effectively flattens the surface electric field distribution, and improves the breakdown voltage of the device and the tolerance to process fluctuations.

The utility model provides a hydrogen injection machine for high-concentration hydrogen-rich liquid, which relates to the technical field of hydrogen injection, and comprises a shell and a cover body, a fixing frame capable of fixing a bottle body is arranged in the shell, a detachable placing frame is arranged above the fixing frame, a hydrogen injection pipe is arranged on the cover body, the hydrogen injection pipe is connected with a hydrogen storage tank, and the hydrogen storage tank is connected with the shell. The hydrogen injection pipe comprises a pipe body, one end of the pipe body is provided with a gas inlet nozzle, the gas inlet nozzle is connected with the hydrogen storage tank through a connecting pipe, the pipe body is provided with a diffusion assembly, and the diffusion assembly evenly disperses hydrogen output from the hydrogen storage tank into the bottle body.

The present application relates to the technical fields of biomass gasification furnace, and disclose a tower-shaped grate, the present application is arranged with the annular base of receiving ash and slag below the furnace body, so as to ensure that after the discharge of ash and slag, the fresh air outside will be sucked from the output direction of ash and slag, and enter the furnace through ash and slag, the outside air passes through ash and slag again, so that ash and slag are further burned, and the waste heat generated in ash and slag enters the furnace along with air, and the heat can be fully reused, and by means of waterless slagging, the water vapor injection into the furnace is reduced, the temperature in the furnace is prevented from being suddenly reduced, the heat energy is saved, and the purpose of saving heat energy and recycling residual heat energy is achieved.

This invention discloses a method and system for reducing white pixels generated by F-ion implantation on CIS products. The method includes the following steps: if the current injection gas source of the machine is a predetermined reducing gas source, determine if there is a batch of F-ion implantation. If so, switch the injection gas source to complete the first batch of F-ion implantation. Continue to determine if there is a second batch of F-ion implantation. If so, switch the gas source of the machine to the predetermined reducing gas source and process the corresponding product batch. After completing the corresponding product batch, switch the gas source of the machine again to process the second batch of F-ion implantation. This cycle is repeated until all batches requiring F-ion implantation are completed. This invention can effectively avoid the defect of white pixels and improve product quality.

The double-bottom pot comprises a pot body and a double-bottom piece arranged at the bottom of the pot body, the double-bottom piece comprises an inner double bottom and an outer double bottom, a limiting structure is arranged on the surface of the side, facing the inner double bottom, of the outer double bottom, and a mounting cavity is defined by the limiting structure and the pot body; the inner composite bottom is arranged in the mounting cavity, and the limiting structure abuts against the inner composite bottom so as to limit the inner composite bottom to move relative to the outer composite bottom. The relative position relation between the inner composite bottom and the outer composite bottom is fixed, combination between the inner composite bottom and the outer composite bottom is tighter and fuller, the inner composite bottom is not prone to eccentricity, the position precision of the inner composite bottom and the outer composite bottom installed at the bottom of the pot body can be guaranteed, accordingly, the respective functions are guaranteed, and the yield of the pot is increased.

The invention provides a memory, a memory system and an operation method of the memory, and relates to the technical field of semiconductor chips. The memory comprises a plurality of memory strings, each memory string comprises a source electrode layer, a bottom selection tube layer and a grid electrode layer, the bottom selection tube layer is located between the source electrode layer and the grid electrode layer, and the bottom selection tube layer comprises a plurality of bottom selection tubes; and the bottom selection tube of the first memory string and the bottom selection tube of the second memory string are connected with the same bottom selection grid line. The invention aims to solve the problem that the programming time is longer and longer under the condition that the density of the memory cells is higher and higher.

The VDMOS comprises a first conductive layer, an N + substrate layer, an N-epitaxial layer and a source gate structure which are sequentially stacked from bottom to top, and further comprises two first P-body regions which are symmetrically arranged at the top of the N-epitaxial layer, and first NSD regions are embedded in the top surfaces of the first P-body regions; the groove structure is arranged in the middle of the top of the N-epitaxial layer, and the two first P-body regions are arranged on the two sides of the groove structure; the trench structure includes a second P-body region, a second NSD region, and a LOCOS oxide layer. According to the invention, the channel of a common VDMOS is not changed and is ensured to participate in the forward conduction process, so that the channel density is not reduced, and the current capability and the conduction resistance of the device are not deteriorated; during reverse conduction, the source electrode and the grid electrode of the channel diode are in short circuit, current flows to the drain electrode from the source electrode of the VDMOS through the opened channel diode, minority carrier injection caused by conduction of the body diode is reduced, reverse recovery charge and reverse recovery time are reduced, and the reverse recovery performance of the device is optimized.

The application discloses a processing method for improving process defects of an image sensor, and comprises the following steps: step 1, providing a substrate comprising a substrate, a polysilicon layer arranged above the substrate, a plurality of grooves arranged in the polysilicon layer, and a side wall formed on the side wall of the groove, wherein the side wall is a SiN layer; step 2, introducing an oxygen-containing gas, and the oxygen-containing gas reacts with the surface of the SiN layer to form SiO x N y ; step 3, cleaning the substrate by using a cleaning reagent; and step 4, forming a photoresist pattern above the substrate to expose the groove; and the SiO x N y , wherein x represents the atomic proportion of O, and y represents the atomic proportion of N. The method provided by the application can effectively clean and remove the tiny particles on the side wall of the groove, avoids the negative influence of the tiny particles on the subsequent photoresist exposure and development, ensures the accurate implementation of the subsequent P-type ion implantation process, is beneficial to reducing white pixels, and improves the performance of the image sensor chip.

The invention provides a blue light host material based on benzonaphthofuryl and anthryl and application of the blue light host material in an organic electroluminescent device, a novel compound serving as the blue light host material in a luminescent layer takes a rigid benzonaphthofuryl group and deuterated anthryl as a host structure, and D has lower activity than H, so that the blue light host material can be applied to organic electroluminescent devices. A C-D bond on anthryl is more stable than a C-H bond, the non-radiative transition of the compound is reduced, the structure is more stable, and the service life and efficiency of the material applied to a device are improved. Aryl is further introduced, a conjugated system can be effectively prolonged, the luminous efficiency can be improved, the HOMO energy level of the aryl is generally high, the LUMO energy level of the aryl is generally low, the energy gap (HOMO-LUMO energy range) of the aryl is large, electron transition is not prone to overspeed, and therefore high stability is achieved.

The invention belongs to the technical field of electronic data processing and information retrieval, and particularly relates to a specific target circling method and application in potential customer group screening. According to the circling method and the application, the calculation of intersection, union and difference is realized by utilizing the RoaringBitmap algorithm through accurate bit operation, and the operation between two containers is efficiently realized, so that the storage performance and the calculation performance are excellent. Meanwhile, a self-developed visual editor is used, so that the process of user circle selection is greatly simplified, the burden of non-technical workers on data preprocessing is reduced, and the work of the non-technical workers can be more focused and focused, for example, the work is focused on the formulation of business logic and marketing strategies. Through the application, a worker can carry out configuration on a visual page, and does not need to deeply understand a data structure and an algorithm principle at the back. The user circle selection function becomes simple and quick, and accurate screening of the target user group can be realized only by simple clicking.

The invention discloses a long-wave infrared detector with a complementary barrier CBIRD structure, belongs to the technical field of infrared detectors, and aims to provide a long-wave infrared detector with a complementary barrier CBIRD structure, introduces a newly designed hole barrier structure, the hole barrier reduces the tunneling related to traps, and the single-stage barrier Np junction between the hole barrier and the absorption layer reduces the SRH related dark current, and the electron barrier is combined to form a complementary barrier CBIRD structure, which solves the problems of high dark current and low responsivity / specific detection rate of InAs / InAsSb T2SL detectors in the prior art. It includes a substrate, and a buffer layer, a bottom contact-hole barrier layer, an absorption layer, an electron barrier layer, and a top contact layer are sequentially arranged on the upper surface of the substrate from bottom to top, and a bottom contact electrode is arranged on the upper surface of the bottom contact-hole barrier layer, and a top contact electrode is arranged on the upper surface of the top contact layer. The invention is applicable to a long-wave infrared detector with a complementary barrier CBIRD structure.

The invention discloses a compound containing a pyrimidine structure, an organic electroluminescent device and a display element, and belongs to the technical field of semiconductor materials. The structure of the compound containing the pyrimidine structure is shown as a general formula (A): # imgabs0 #. The compound containing the pyrimidine structure is applied to an organic thin film layer of an organic electroluminescent device, and the organic thin film layer comprises a hole transmission region thin film layer, a light-emitting region thin film layer and an electron transmission region thin film layer, the electron transmission region thin film layer contains the compound containing the pyrimidine structure. The compound containing the pyrimidine structure has good stability and good hole blocking capacity, and when the compound containing the pyrimidine structure is used as a material of an organic electroluminescent device, the efficiency of the device is remarkably improved, and the service life of the device is remarkably prolonged.

The application discloses a method and system for reducing white pixel caused by F ion implantation on CIS products, wherein the method comprises the following steps: if the current machine implantation gas source is a predetermined gas source with reducing property, it is determined whether there is a batch of F ion implantation; if yes, the machine implantation gas is switched, and the first batch of F ion implantation is completed; it is continuously determined whether there is a second batch of F ion implantation; if yes, the machine switches the gas source, and the predetermined gas source with reducing property is implanted, and the corresponding product batch is processed; after the corresponding product batch is completed, the machine switches the gas source, and the second batch of F ion implantation is processed; the cycle is repeated until all batches of F ion implantation are completed. The application can effectively avoid the white pixel defect and improve the product quality.

The invention discloses temperature-control-activation-based efficient cross-linking modified silicone rubber applied to cable accessories and a preparation method of the silicone rubber, and belongs to the technical field of cable accessory materials. The invention aims to solve the problem that the insulation performance is reduced due to tensile deformation by improving the electrical tree electric strength of the silicone rubber material; the temperature resistance of the SIR is improved, so that the high temperature resistance required by temperature-resistant wires and cables in engineering can be met; and the tensile strength of the silicon rubber material is improved, so that relatively large tensile stress required by accessory installation is relieved. The invention relates to efficient crosslinking modified silicone rubber based on temperature control activation applied to cable accessories. The silicone rubber is cinnamyl nitrile grafted silicone rubber. The silicone rubber comprises a component A and a component B, wherein the component A mainly comprises vinyl raw rubber and a platinum catalyst; the component B mainly contains vinyl raw rubber and hydrogen-containing silicone oil; the cable accessory is used in offshore wind power, urban underground power grids, transformer substation engineering, photovoltaic power generation and energy storage systems.

This application provides a method for manufacturing a field-effect transistor (FET), the FET itself, and its layout structure. The FET separates the shielding gate and the gate electrode, ensuring uniform contact between the shielding gate and the source metal for timely response to state transitions and preventing localized breakdown. Furthermore, the oxide layer at the top of the shielding gate is thinned to reduce reverse recovery charge injection during reverse recovery. By adjusting the position of the shielding gate and thinning the oxide layer, this invention effectively improves the device's ease of use (EAS), reduces the reverse recovery time, enhances its reverse recovery capability, and improves reliability.

This invention discloses an implicit MCP invocation method, system, and computer-readable storage medium. The method includes: converting and storing the description information of multiple MCPs into multiple MCP description vectors; receiving a user request and generating a query vector based on the user request; using the query vector to search, match, and score the multiple MCP description vectors, and selecting the MCP description vector with the highest comprehensive score for invocation. This invention reduces the injection of irrelevant MCP information by converting and storing the MCP description information into MCP description vectors and transforming the user request into a query vector, thus avoiding excessive occupancy of the limited context window by description information and improving the overall efficiency of data vocation. Users also do not need to remember or search for MCP names, optimizing the user experience. Furthermore, using the query vector to search, match, and score multiple MCP description vectors and selecting the MCP description vector with the highest comprehensive score for invocation improves the quality of the invocation response.

The utility model relates to a cooling tower air inlet grille which comprises a frame body, a plurality of partition plates and a plurality of shielding assemblies, the frame body comprises two parallel first side frames, the section of each partition plate is in a corrugated shape, the partition plates are arranged on the inner side of the frame body at intervals, the partition plates are all parallel to the first side frames, and the shielding assemblies are arranged on the first side frames. A plurality of baffle plates are arranged at intervals of the partition plates, the baffle plates are distributed at intervals, the baffle plates are inclined to the partition plates, every two adjacent baffle plates are symmetrically arranged with the horizontal direction as the symmetry axis, the two sides of the shielding assembly are connected with the first side frame, and the shielding assembly comprises a shielding plate; and the baffle plate is inclined relative to the first side frame. According to the air inlet grille, the amount of sunlight entering the cooling tower can be greatly reduced at multiple angles through the corrugated partition plates, the latticed structure composed of the partition plates and the inclined blocking pieces and the shielding assembly arranged on the outer side, so that growth of algae in the cooling tower is prevented, bacterial reproduction is inhibited, and cleanliness of circulating water in the cooling tower is guaranteed.

The utility model discloses a mine heat exchange system with deep geothermal energy as a power source. The mine heat exchange system comprises a power device and a heat exchange device. The power device comprises a steam generating mechanism, a driving mechanism and a ground source heat pump, and the steam generating mechanism is connected with the driving mechanism and used for transmitting generated steam to the driving mechanism; the driving mechanism is connected with the geothermal source pump and used for pressurizing the received steam and then driving the geothermal source pump to work; the heat exchange device comprises a water inlet pipe, a water outlet pipe and a heat exchange pipe, and the water inlet pipe is connected with a heat dissipation belt of the mine goaf and used for injecting water into the mine goaf; one end of the water outlet pipe is connected with a water accumulation area of the mine goaf, the other end of the water outlet pipe is fixedly connected with the geothermal source pump, and accumulated water in the mine goaf is pumped out from the water accumulation area through the water outlet pipe under the power action of the geothermal source pump; one end of the heat exchange pipe is connected with the geothermal source pump, the other end of the heat exchange pipe is connected with the heat utilization unit, and accumulated water in the goaf is pumped out along the water outlet pipe and pumped into the heat utilization unit along the heat exchange pipe under power driving of the geothermal source pump.