The application discloses a
processing method for improving process defects of an
image sensor, and comprises the following steps: step 1, providing a substrate comprising a substrate, a polysilicon layer arranged above the substrate, a plurality of grooves arranged in the polysilicon layer, and a side wall formed on the side wall of the groove, wherein the side wall is a SiN layer; step 2, introducing an
oxygen-containing gas, and the
oxygen-containing gas reacts with the surface of the SiN layer to form SiO x N y ; step 3, cleaning the substrate by using a cleaning
reagent; and step 4, forming a
photoresist pattern above the substrate to
expose the groove; and the SiO x N y , wherein x represents the atomic proportion of O, and y represents the atomic proportion of N. The method provided by the application can effectively clean and remove the tiny particles on the side wall of the groove, avoids the negative influence of the tiny particles on the subsequent
photoresist exposure and development, ensures the accurate implementation of the subsequent P-type
ion implantation process, is beneficial to reducing white pixels, and improves the performance of the
image sensor chip.