49results about How to "Reduce injection" patented technology

The invention discloses a TOPCon battery capable of reducing UV attenuation and a preparation method thereof, and belongs to the field of TOPCon batteries, the TOPCon battery comprises a silicon substrate, and three silicon nitride layers / two silicon oxynitride layers / one silicon oxide layer are sequentially deposited on the front surface of the treated silicon substrate to form a front surface antireflection layer; and depositing three silicon nitride layers on the back of the silicon substrate to form a back antireflection layer. The polycrystalline solar cell has the advantages that three silicon nitride layers / two silicon oxynitride layers / one silicon oxide layer are arranged on the front face of the silicon substrate to serve as the front face antireflection layer, the color stability is high, the surface of the silicon substrate can be better passivated, light reflection can be better reduced, the open-circuit voltage and the short-circuit current of the polycrystalline solar cell are improved, and the service life of the polycrystalline solar cell is prolonged. Therefore, the photoelectric conversion efficiency of the polycrystalline solar cell is effectively improved.

The invention belongs to the field of organic electroluminescent materials, and discloses a blue light host material, a preparation method and an organic electroluminescent device. The structure of the blue light host material is as shown in a chemical formula I: # imgabs0 #. After the blue light host material provided by the invention is applied to the organic electroluminescent device, the driving voltage of the photoelectric device can be reduced, the luminous efficiency of the photoelectric device can be improved, and the service life of the photoelectric device can be prolonged.

The invention provides an OLED (Organic Light Emitting Diode) display screen, an OLED display screen assembly and electronic equipment. The OLED display screen comprises an OLED light-emitting panel and a color film layer. The OLED light-emitting panel comprises a plurality of pixel units, and each pixel unit comprises a plurality of sub-pixels which are arranged at intervals. The color film layer covers the light emitting side of the OLED light emitting panel, the color film layer comprises a plurality of light filtering units, each light filtering unit comprises a plurality of light filtering parts arranged at intervals and at least one first shading part located between every two adjacent light filtering parts, each light filtering part correspondingly covers one sub-pixel, and the first shading part is located between every two adjacent light filtering parts. At least one first shading part of each filtering unit is provided with a first light through hole. According to the OLED display screen, the OLED display screen assembly and the electronic equipment provided by the invention, the reflectivity and the light transmission of the full screen are uniform and consistent, and optical devices under the screen can be hidden.

The utility model discloses a polycarbonate plate with air permeability, which relates to the technical field of building boards, and comprises a top substrate and a bottom substrate, the bottom of the top substrate is fixedly connected with the top of the bottom substrate, the top of the top substrate is provided with a top air groove, the inner side wall of the top air groove is provided with a side air groove, and the bottom of the bottom substrate is provided with a side air groove. A bottom air groove is formed in the bottom of the top base plate, the top air groove, the bottom air groove and the side air grooves communicate with one another, and a plurality of drainage grooves and vent grooves are formed in the top of the bottom base plate. The polycarbonate plate with the air permeability is provided with the top air groove, the bottom air groove, the side air groove, the vent groove and the drainage groove, when it rains, rainwater enters from the top air groove and flows into the drainage groove to be discharged, and gas enters from the top air groove, then passes through the side air groove and the bottom air groove and finally flows out from the vent groove; according to the structure, the air permeability of the polycarbonate plate can be improved, air circulation is improved, and stuffiness is reduced.

Embodiments of the present invention provide a power semiconductor device, a related circuit, a chip, an electronic device, and a preparation method. The semiconductor device optimizes a front structure of a diode region, and reduces carrier concentration in the diode region by reducing a thickness of a semiconductor layer used as a positive electrode region or a negative electrode region in the region. In this way, a reverse recovery charge amount is reduced, a reverse recovery loss Err of a diode is reduced, and switching efficiency of an RC-IGBT is finally improved.

The application discloses a kind of liquid bag automatic filling heat sealing machine and its operating method, including rack;Liquid inlet device, including liquid inlet pipe, setting on the filling mechanism and exhaust mechanism of rack, filling mechanism is connected with the liquid inlet end of liquid inlet pipe, exhaust mechanism is connected with the liquid suction end of liquid inlet pipe, liquid inlet pipe is equipped with the clamping stop component of pressing liquid inlet pipe;Heat sealing device, including with the branch pipe of liquid inlet pipe connection, liquid level sensor and for heat sealing branch pipe end heat sealing component, the liquid inlet end of branch pipe is located between two adjacent clamping stop components.This scheme reduces the contact of liquid bag and external air during filling process, reduces the pollution to blood in liquid bag;Exhaust mechanism is used to exhaust liquid in liquid bag, reduce the injection of air in liquid bag, prevent that there is obvious bubble after liquid bag filling, cause bubble damage to save the cell liquid after freezing;Multiple heat sealing devices are in parallel, when one bag is exhausted and heat sealed, the next bag is filled simultaneously.Improve filling heat sealing efficiency, and the degree of automation is higher.

The utility model discloses a liquid medicine concentration regulator, which belongs to the technical field of liquid medicine and comprises a mixing tank, support plates are fixedly connected to two sides of the top of the mixing tank, a bearing plate is fixedly connected to the tops of the support plates, and a quantitative tank is fixedly connected to the top of the bearing plate. Liquid needing to be prepared with liquid medicine is conveyed into the mixing tank through the liquid injection opening in the left side of the mixing tank, then the stirring rod is driven by the motor to rotate, the stirring blades are driven by the stirring rod to rotate, the liquid medicine is stirred through the stirring blades so that the liquid medicine can be evenly mixed, and the mode that manual stirring is replaced with electric stirring is adopted; the stirring time is shortened, the quality of a finished product is greatly improved, after stirring is completed, the concentration of medicine is analyzed through the medicine concentration analyzer, an analysis result is transmitted to the display screen, a user checks through the display screen, and when the concentration of the medicine reaches the standard, the medicine is output for use.

The invention discloses a compressor lower cover, a vertical compressor and an air conditioner, the compressor lower cover comprises a lower cover body, the lower cover body is provided with an oil pool for containing refrigeration oil, the oil pool is of a conical structure, and the wider end of the oil pool is located above the narrower end of the oil pool; when the compressor is in a horizontal or inclined working state, the oil level of refrigeration oil in the oil pool is higher than the effective surface of an oil pump of the compressor. According to the compressor, the oil pool is designed to be of the conical structure, compared with the prior art, in order to achieve the same horizontal state oil liquid level height, less refrigerant oil needs to be injected, the injection amount of the refrigerant oil is reduced, and then the overall weight of the compressor is reduced.

The present invention provides a MOSFET structure with a multi-layer gate control region and a preparation method, comprising: a substrate, the substrate comprising a first surface and a second surface arranged oppositely, the first surface covered with a doped drift layer, the surface of the doped drift layer is provided with a gate region and two source regions, the gate region is placed between the source regions; the gate region comprises a gate control region, the gate control region comprises a first gate control layer, a second gate control layer, a third gate control layer, a fourth gate control layer and a fifth gate control layer stacked in sequence and having different concentrations, the first gate control layer covers the doped drift layer. By setting the gate control region, the P-shield layer can be in a floating state when the device is turned on, which helps to improve the injection and distribution of carriers, reduce the lateral JFET resistance to a certain extent, reduce the amount of stored charge, and thereby reduce the on-resistance of the device, improve the reliability of the gate oxide layer, and improve the breakdown resistance of the device.

This invention relates to the field of data monitoring technology, specifically to a business operation monitoring system based on AI data sharing, comprising: a federated learning module for aggregating model parameters of multiple business systems through a dynamic differential privacy mechanism to generate an anomaly detection model; and a knowledge graph module for constructing a dynamic service dependency graph based on logs, performance indicators, and user behavior data of the multiple business systems. In use, this invention combines a dynamic differential privacy mechanism with local training, achieving the goal of making user data available but invisible, meeting legal compliance requirements such as GDPR and data export restrictions. By automatically adjusting noise injection through a combination of information gain and differential privacy budget, the system improves model aggregation accuracy while avoiding privacy leaks. High-contribution nodes receive less noise injection, helping their high-quality local models to play a greater role in the global model. An automatic pause mechanism with an upper limit is set to prevent sensitive systems from exceeding acceptable privacy leakage limits due to excessive participation.

The invention discloses a multi-layer structure polyetherimide energy storage composite dielectric film and application thereof, and belongs to the technical field of energy storage dielectric materials and preparation thereof. The invention aims to solve the problems of large high-temperature dielectric loss and poor energy storage performance of the existing polyetherimide-based energy storage composite medium. The multi-layer structure polyetherimide energy storage composite dielectric film is of a three-layer structure and is composed of a scattering electron layer and a capturing electron layer. According to one structure, two surface layers are scattering electron layers, and a middle layer is a capturing electron layer; in the other structure, two surface layers are capture electron layers, and the middle layer is a scattering electron layer; the scattering electron layer is formed by compounding polyetherimide and 4-N, N-dimethylamino phenylboronic acid; and the electron capture layer is formed by compounding polyetherimide and tetrafluoro (4-cyano) quinoline dimethane. The preparation method belongs to an all-organic system, is suitable for large-scale production, and provides a new research and development thought for large-scale production of high-temperature and high-field energy storage all-organic composite films used for a long time.

The application relates to the technical field of semiconductors, and provides a gradient-doped composite JTE terminal structure. The structure comprises a substrate, an epitaxial layer arranged on the substrate, an active region arranged in the epitaxial layer, and an edge protection region arranged in the epitaxial layer and surrounding the active region. The edge protection region comprises a plurality of JTE regions and a plurality of reverse-doped regions, the plurality of JTE regions are arranged in the epitaxial layer in a direction away from the active region, the plurality of reverse-doped regions are embedded in the JTE regions, the reverse-doped regions and the JTE regions have semiconductor materials of different conduction types, and the doping concentration of the reverse-doped regions is in an increasing distribution in the direction away from the active region. The application splits the electric field peak at the main junction into a plurality of electric field peaks, effectively flattens the surface electric field distribution, and improves the breakdown voltage of the device and the tolerance to process fluctuations.

The utility model relates to the technical field of well mouth water injection devices, and discloses a coal bed gas water injection well mouth device which comprises a main flow pipe and an adjusting assembly, the adjusting assembly is located on the outer side of the main flow pipe and comprises a water outlet, the water outlet is formed in the outer end of the main flow pipe, and the outer end of the water outlet is fixedly communicated with a water inlet pipe. A containing groove is formed in the outer end of the water inlet pipe. According to the coal bed gas water injection wellhead device, by installing the adjusting assembly, when water is injected into a coal bed, the humidity and the water injection range of surrounding coal bodies after water injection can be transmitted to the control panel through the humidity detector, and then through cooperation of a motor, a valve and other components, part of too-humid coal bodies can be reduced to be injected into a water source; the water resource waste caused by waste of a large amount of water resources on the coal body with the humidity exceeding the expected humidity due to the fact that water is injected into the media with the humidity exceeding the expected humidity of the surrounding part of the coal body is avoided, and the practicability of the device is improved.

The utility model provides a hydrogen injection machine for high-concentration hydrogen-rich liquid, which relates to the technical field of hydrogen injection, and comprises a shell and a cover body, a fixing frame capable of fixing a bottle body is arranged in the shell, a detachable placing frame is arranged above the fixing frame, a hydrogen injection pipe is arranged on the cover body, the hydrogen injection pipe is connected with a hydrogen storage tank, and the hydrogen storage tank is connected with the shell. The hydrogen injection pipe comprises a pipe body, one end of the pipe body is provided with a gas inlet nozzle, the gas inlet nozzle is connected with the hydrogen storage tank through a connecting pipe, the pipe body is provided with a diffusion assembly, and the diffusion assembly evenly disperses hydrogen output from the hydrogen storage tank into the bottle body.

The present invention discloses a new energy grid-connected control circuit and an SST control method based on a virtual synchronous machine. The present invention aims at connecting a new energy grid to a three-stage SST composed of an input stage, an isolation stage and an output stage, and arranges a new energy grid-connected control circuit based on a VSG at the output stage. Based on the circuit, current balance, active power and reactive power constant control under unbalanced voltage are performed through an SST control method, and a control strategy for grid stability is calculated through an SST control method based on a virtual synchronous machine under unbalanced voltage, thereby improving the power supply quality of the grid and improving the grid-connected current, voltage and power quality output by the SST output stage.

The present application relates to the technical fields of biomass gasification furnace, and disclose a tower-shaped grate, the present application is arranged with the annular base of receiving ash and slag below the furnace body, so as to ensure that after the discharge of ash and slag, the fresh air outside will be sucked from the output direction of ash and slag, and enter the furnace through ash and slag, the outside air passes through ash and slag again, so that ash and slag are further burned, and the waste heat generated in ash and slag enters the furnace along with air, and the heat can be fully reused, and by means of waterless slagging, the water vapor injection into the furnace is reduced, the temperature in the furnace is prevented from being suddenly reduced, the heat energy is saved, and the purpose of saving heat energy and recycling residual heat energy is achieved.

The invention discloses a water-saving sewage recovery and treatment device for a fabric scouring process, and belongs to the technical field of textile printing and dyeing processing; the invention comprises a scouring box, a feeding rack is arranged on the top of the scouring box, an inclined nozzle is arranged inside the feeding rack, a control panel is arranged on the outer wall of one end of the scouring box, and a discharge port is penetrated on the outer wall of the other end of the scouring box, and a flow guide frame is arranged inside the scouring box; therefore, the invention can not only perform internal and external split reflux treatment on the water required for scouring, constitute flushing filtration of external impurities and internal high-temperature medium scouring slow flow filtration, realize strict control and circulation purification of the scouring water, but also perform slag discharge purification and controlled replacement according to the use status of the internal and external media of the scouring, reduce the injection of new media and the external discharge of waste media, effectively reduce the water resource loss and pollution in the process of grey cloth scouring, and constitute non-stop continuous operation of grey cloth scouring.

The utility model provides an OLED (Organic Light Emitting Diode) display panel and a display device. The OLED display panel comprises a substrate; a first electrode in the substrate; the pixel definition layer and the pixel unit are arranged on the first electrode, a through hole is formed in the pixel definition layer, the through hole is filled with the pixel unit and electrically connected with the first electrode, the second electrode is electrically connected with the pixel unit, and a target area, located on the pixel definition layer, of the second electrode is a laser area. The laser area is obtained by performing laser processing on the target area. And the laser area is black and can absorb external light and reduce reflection light of the external light entering human eyes, so that the reflectivity of the OLED display panel is reduced. Specifically, in the light emitting stage, external light and reflected light of the external light in the display panel are absorbed, and the light is prevented from directly entering eyes to affect visual experience. In the screen turn-off state, external light and reflected light thereof are absorbed, and the integrated black effect of the screen is improved.

This invention discloses a method and system for reducing white pixels generated by F-ion implantation on CIS products. The method includes the following steps: if the current injection gas source of the machine is a predetermined reducing gas source, determine if there is a batch of F-ion implantation. If so, switch the injection gas source to complete the first batch of F-ion implantation. Continue to determine if there is a second batch of F-ion implantation. If so, switch the gas source of the machine to the predetermined reducing gas source and process the corresponding product batch. After completing the corresponding product batch, switch the gas source of the machine again to process the second batch of F-ion implantation. This cycle is repeated until all batches requiring F-ion implantation are completed. This invention can effectively avoid the defect of white pixels and improve product quality.

A memory structure includes active columns of polysilicon formed over a semiconductor substrate, each active column including one or more vertical NOR strings, where each NOR string has thin film memory transistors sharing local source lines and local bit lines, the local bit line is connected by a segment of the segmented global bit line to a sense amplifier provided in the semiconductor substrate.

The double-bottom pot comprises a pot body and a double-bottom piece arranged at the bottom of the pot body, the double-bottom piece comprises an inner double bottom and an outer double bottom, a limiting structure is arranged on the surface of the side, facing the inner double bottom, of the outer double bottom, and a mounting cavity is defined by the limiting structure and the pot body; the inner composite bottom is arranged in the mounting cavity, and the limiting structure abuts against the inner composite bottom so as to limit the inner composite bottom to move relative to the outer composite bottom. The relative position relation between the inner composite bottom and the outer composite bottom is fixed, combination between the inner composite bottom and the outer composite bottom is tighter and fuller, the inner composite bottom is not prone to eccentricity, the position precision of the inner composite bottom and the outer composite bottom installed at the bottom of the pot body can be guaranteed, accordingly, the respective functions are guaranteed, and the yield of the pot is increased.

The invention provides a memory, a memory system and an operation method of the memory, and relates to the technical field of semiconductor chips. The memory comprises a plurality of memory strings, each memory string comprises a source electrode layer, a bottom selection tube layer and a grid electrode layer, the bottom selection tube layer is located between the source electrode layer and the grid electrode layer, and the bottom selection tube layer comprises a plurality of bottom selection tubes; and the bottom selection tube of the first memory string and the bottom selection tube of the second memory string are connected with the same bottom selection grid line. The invention aims to solve the problem that the programming time is longer and longer under the condition that the density of the memory cells is higher and higher.

The VDMOS comprises a first conductive layer, an N + substrate layer, an N-epitaxial layer and a source gate structure which are sequentially stacked from bottom to top, and further comprises two first P-body regions which are symmetrically arranged at the top of the N-epitaxial layer, and first NSD regions are embedded in the top surfaces of the first P-body regions; the groove structure is arranged in the middle of the top of the N-epitaxial layer, and the two first P-body regions are arranged on the two sides of the groove structure; the trench structure includes a second P-body region, a second NSD region, and a LOCOS oxide layer. According to the invention, the channel of a common VDMOS is not changed and is ensured to participate in the forward conduction process, so that the channel density is not reduced, and the current capability and the conduction resistance of the device are not deteriorated; during reverse conduction, the source electrode and the grid electrode of the channel diode are in short circuit, current flows to the drain electrode from the source electrode of the VDMOS through the opened channel diode, minority carrier injection caused by conduction of the body diode is reduced, reverse recovery charge and reverse recovery time are reduced, and the reverse recovery performance of the device is optimized.

The application discloses a processing method for improving process defects of an image sensor, and comprises the following steps: step 1, providing a substrate comprising a substrate, a polysilicon layer arranged above the substrate, a plurality of grooves arranged in the polysilicon layer, and a side wall formed on the side wall of the groove, wherein the side wall is a SiN layer; step 2, introducing an oxygen-containing gas, and the oxygen-containing gas reacts with the surface of the SiN layer to form SiO x N y ; step 3, cleaning the substrate by using a cleaning reagent; and step 4, forming a photoresist pattern above the substrate to expose the groove; and the SiO x N y , wherein x represents the atomic proportion of O, and y represents the atomic proportion of N. The method provided by the application can effectively clean and remove the tiny particles on the side wall of the groove, avoids the negative influence of the tiny particles on the subsequent photoresist exposure and development, ensures the accurate implementation of the subsequent P-type ion implantation process, is beneficial to reducing white pixels, and improves the performance of the image sensor chip.

The present invention provides a trench MOSFET device, comprising: a first epitaxial layer of a first doping type located on a substrate; a first conductive layer of a second doping type, the first conductive layer of the second doping type is located in the first epitaxial layer of the first doping type, and the second doping type is opposite to the first doping type; a second epitaxial layer of the first doping type, the second epitaxial layer of the first doping type is located on the surface of the first epitaxial layer of the first doping type and the surface of the first conductive layer of the second doping type; a body region; a second conductive layer located in the second epitaxial layer of the first doping type, the second conductive layer connects the first conductive layer of the second doping type and the body region. Based on the trench MOSFET device of the present invention, the withstand voltage BV of the trench MOSFET device is improved, Crss / Ciss is reduced, and the reliability of the trench MOSFET device is improved.

The invention provides a blue light host material based on benzonaphthofuryl and anthryl and application of the blue light host material in an organic electroluminescent device, a novel compound serving as the blue light host material in a luminescent layer takes a rigid benzonaphthofuryl group and deuterated anthryl as a host structure, and D has lower activity than H, so that the blue light host material can be applied to organic electroluminescent devices. A C-D bond on anthryl is more stable than a C-H bond, the non-radiative transition of the compound is reduced, the structure is more stable, and the service life and efficiency of the material applied to a device are improved. Aryl is further introduced, a conjugated system can be effectively prolonged, the luminous efficiency can be improved, the HOMO energy level of the aryl is generally high, the LUMO energy level of the aryl is generally low, the energy gap (HOMO-LUMO energy range) of the aryl is large, electron transition is not prone to overspeed, and therefore high stability is achieved.

The invention belongs to the technical field of electronic data processing and information retrieval, and particularly relates to a specific target circling method and application in potential customer group screening. According to the circling method and the application, the calculation of intersection, union and difference is realized by utilizing the RoaringBitmap algorithm through accurate bit operation, and the operation between two containers is efficiently realized, so that the storage performance and the calculation performance are excellent. Meanwhile, a self-developed visual editor is used, so that the process of user circle selection is greatly simplified, the burden of non-technical workers on data preprocessing is reduced, and the work of the non-technical workers can be more focused and focused, for example, the work is focused on the formulation of business logic and marketing strategies. Through the application, a worker can carry out configuration on a visual page, and does not need to deeply understand a data structure and an algorithm principle at the back. The user circle selection function becomes simple and quick, and accurate screening of the target user group can be realized only by simple clicking.

The invention discloses a long-wave infrared detector with a complementary barrier CBIRD structure, belongs to the technical field of infrared detectors, and aims to provide a long-wave infrared detector with a complementary barrier CBIRD structure, introduces a newly designed hole barrier structure, the hole barrier reduces the tunneling related to traps, and the single-stage barrier Np junction between the hole barrier and the absorption layer reduces the SRH related dark current, and the electron barrier is combined to form a complementary barrier CBIRD structure, which solves the problems of high dark current and low responsivity / specific detection rate of InAs / InAsSb T2SL detectors in the prior art. It includes a substrate, and a buffer layer, a bottom contact-hole barrier layer, an absorption layer, an electron barrier layer, and a top contact layer are sequentially arranged on the upper surface of the substrate from bottom to top, and a bottom contact electrode is arranged on the upper surface of the bottom contact-hole barrier layer, and a top contact electrode is arranged on the upper surface of the top contact layer. The invention is applicable to a long-wave infrared detector with a complementary barrier CBIRD structure.

The invention discloses a compound containing a pyrimidine structure, an organic electroluminescent device and a display element, and belongs to the technical field of semiconductor materials. The structure of the compound containing the pyrimidine structure is shown as a general formula (A): # imgabs0 #. The compound containing the pyrimidine structure is applied to an organic thin film layer of an organic electroluminescent device, and the organic thin film layer comprises a hole transmission region thin film layer, a light-emitting region thin film layer and an electron transmission region thin film layer, the electron transmission region thin film layer contains the compound containing the pyrimidine structure. The compound containing the pyrimidine structure has good stability and good hole blocking capacity, and when the compound containing the pyrimidine structure is used as a material of an organic electroluminescent device, the efficiency of the device is remarkably improved, and the service life of the device is remarkably prolonged.

The application discloses a method and system for reducing white pixel caused by F ion implantation on CIS products, wherein the method comprises the following steps: if the current machine implantation gas source is a predetermined gas source with reducing property, it is determined whether there is a batch of F ion implantation; if yes, the machine implantation gas is switched, and the first batch of F ion implantation is completed; it is continuously determined whether there is a second batch of F ion implantation; if yes, the machine switches the gas source, and the predetermined gas source with reducing property is implanted, and the corresponding product batch is processed; after the corresponding product batch is completed, the machine switches the gas source, and the second batch of F ion implantation is processed; the cycle is repeated until all batches of F ion implantation are completed. The application can effectively avoid the white pixel defect and improve the product quality.