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GaN-based LED structure and formation method thereof

A technology of LED structure and structure layer, applied in the field of LED (Light Emitting Diode), can solve the problem of insufficient internal quantum efficiency, and achieve the effect of improving the composite luminous efficiency, reducing the escape of electrons from the quantum well light-emitting layer, and improving the height of the electron potential barrier.

Inactive Publication Date: 2016-02-03
HUIZHOU BYD IND
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Problems solved by technology

[0004] The present invention aims to solve one of the technical problems of insufficient internal quantum efficiency in the related art at least to a certain extent

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  • GaN-based LED structure and formation method thereof
  • GaN-based LED structure and formation method thereof
  • GaN-based LED structure and formation method thereof

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Embodiment Construction

[0019] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0020] The first aspect of the present invention proposes a GaN-based LED structure, which may include: a substrate; a GaN buffer layer on the substrate; a first doping type GaN layer on the GaN buffer layer; Quantum well light-emitting layer on the first doping type GaN layer; second doping type GaN layer on the quantum well light-emitting layer; electron blocking layer; and P electrode and N electrode. It should be noted that the GaN layer of the first doping type may be an N-type GaN layer, and the GaN layer of the second dopi...

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Abstract

The invention discloses a GaN-based LED structure and a formation method thereof. The GaN-based LED structure comprises a substrate; a GaN buffer layer formed on the substrate; a first-doping-type GaN layer arranged on the GaN buffer layer; a quantum well luminous layer arranged on the first-doping-type GaN layer; a second-doping-type GaN layer arranged on the quantum well luminous layer; an electronic barrier layer arranged between the quantum well luminous layer and a P-doping-type GaN layer, wherein the electronic barrier layer comprises a block structure layer and a superlattice structure layer, the forbidden band width of the block structure layer being larger than that of the GaN, and the superlattice structure layer is used for adjusting the energy band inclination degree between the P-doping-type GaN layer and the block structure layer so as to reduce hole barrier height; and a P electrode and an N electrode. The GaN-based LED structure adopts a composite structure of the block structure layer and the superlattice structure layer, so that composite luminescence efficiency of electron holes in the quantum well luminous layer is greatly improved; and the GaN-based LED structure has the advantage of simple structure and the like.

Description

technical field [0001] The invention belongs to the technical field of LED (Light Emitting Diode, light emitting diode), and specifically relates to a GaN-based LED structure and a forming method thereof. Background technique [0002] With the continuous development of the LED industry, LED has become a new generation of lighting source with its advantages of energy saving and environmental protection. At the same time, the performance of LED devices is also constantly developing in the direction of high brightness, low voltage and good reliability. In the existing technology, an electron blocking layer is inserted behind the quantum well light-emitting layer, so as to increase the spatial recombination probability of electron holes, improve internal quantum efficiency, and improve light efficiency. [0003] Common electron blocking layers include AlGaN block structure, AlGaN / GaN superlattice structure and other forms. The forbidden band width of AlGaN material is larger th...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/30
Inventor 吴明驰
Owner HUIZHOU BYD IND
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