A gallium nitride-based light-emitting diode epitaxial wafer and its growth method

Abstract

The invention discloses a gallium nitride-based light emitting diode epitaxial wafer and a growth method thereof, belonging to the field of semiconductor technology. The gallium nitride-based light emitting diode epitaxial wafer comprises a substrate, buffer layer, N-type layer, active layer, low temperature P-type layer, an electron barrier layer and a high temperature P-type layer, The buffer layer, the N-type layer, the active layer, the low-temperature P-type layer, the electron blocking layer and the high-temperature P-type layer are laminated on the substrate in turn, the material of thelow-temperature P-type layer adopts P-type doped aluminum gallium nitride, and the material of the electron blocking layer adopts P-type doped aluminum indium gallium nitrogen layer. By changing thematerial of the low-temperature P-type layer to P-type doped aluminum gallium nitride, The barrier height of the low temperature P-type layer is increased by using the higher barrier of the aluminum component, and the material of the electron barrier layer is changed into the P-type doped Al-In-Ga-N layer. The barrier height of the electron barrier layer is decreased by using the lower barrier ofthe indium component, and finally the luminescence efficiency of the LED is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride-based light-emitting diode epitaxial wafer and a growth method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. Gallium nitride (GaN) has good thermal conductivity, high temperature resistance, acid and alkali resistance, high hardness and other excellent characteristics, and is widely used in light-emitting diodes of various wavelengths. The core component of GaN-based light-emitting diodes is a chip, which includes an epitaxial wafer and electrodes arranged on the epitaxial wafer. [0003] The existing gallium nitride-based light-emitting diode epitaxial wafer includes a substrate, a buffer layer, an N-type semiconductor layer, an active layer, and a P-type semiconductor layer, and the buffer layer, N-type semiconductor layer, ...

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Problems solved by technology

[0008] The embodiment of the present invention provides a gallium nitride-based light-emitting diode epitaxial wafer and its growth method, which can solve the problem of electrons easily transitioning to the low-temperature P-type layer and performing non-radiative recombination with holes in the prior art, resulting in low luminous efficiency of LEDs. The problem

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