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Epitaxial wafer for light-emitting diode, and manufacturing method for epitaxial wafer

A manufacturing method and technology for light-emitting diodes, which are applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of low electron recombination luminescence efficiency, and achieve the effects of improving internal quantum efficiency, increasing recombination luminescence, and increasing the number of holes.

Active Publication Date: 2017-11-07
HC SEMITEK CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem of low efficiency of hole and electron recombination light emission in the prior art, an embodiment of the present invention provides an epitaxial wafer of a light emitting diode and a manufacturing method thereof

Method used

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  • Epitaxial wafer for light-emitting diode, and manufacturing method for epitaxial wafer
  • Epitaxial wafer for light-emitting diode, and manufacturing method for epitaxial wafer
  • Epitaxial wafer for light-emitting diode, and manufacturing method for epitaxial wafer

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Embodiment 1

[0029] An embodiment of the present invention provides an epitaxial wafer of a light-emitting diode, see figure 1 The epitaxial wafer includes a substrate 1 and a buffer layer 2 , an undoped gallium nitride layer 3 , an N-type gallium nitride layer 4 , a light emitting layer 5 and a P-type gallium nitride layer 6 stacked on the substrate 1 in sequence.

[0030] In this example, see figure 2 The light-emitting layer 5 includes multiple quantum well layers 51 and multiple quantum barrier layers 52, the multiple quantum well layers 51 and multiple quantum barrier layers 52 are alternately stacked, and the quantum barrier layers 52 are gallium nitride layers. Among the plurality of quantum well layers 51, at least three quantum well layers 51 closest to the N-type gallium nitride layer 4 are the first quantum well layer 51a, and among the plurality of quantum well layers 51, all but the first quantum well layer 51a The quantum well layer 51 is a second quantum well layer 51b, th...

Embodiment 2

[0054] An embodiment of the present invention provides an epitaxial wafer of a light emitting diode, and the epitaxial wafer provided in this embodiment is a specific implementation manner of the epitaxial wafer provided in Embodiment 1.

[0055] In this embodiment, the number of layers of the first quantum well layer is 3, the number of layers of the second quantum well layer is 6, and the doping concentration of the P-type dopant in each second quantum well layer remains unchanged, and The doping concentrations of the P-type dopants in the multiple second quantum well layers are equal.

Embodiment 3

[0057] An embodiment of the present invention provides an epitaxial wafer of a light emitting diode, and the epitaxial wafer provided in this embodiment is another specific implementation manner of the epitaxial wafer provided in Embodiment 1.

[0058] In this embodiment, the number of layers of the first quantum well layer is 3, the number of layers of the second quantum well layer is 6, and each second quantum well layer includes the first sublayer, the second sublayer and the second sublayer stacked in sequence. Three sublayers, the second sublayer is a P-type doped indium gallium nitride layer, the first sublayer and the third sublayer are undoped indium gallium nitride layers, the thickness of the first sublayer and the thickness of the third sublayer The thicknesses are equal, the thickness of the second sub-layer is 1nm, and the doping concentration of the P-type dopant in the plurality of second quantum well layers is equal.

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Abstract

The invention discloses an epitaxial wafer for a light-emitting diode and a manufacturing method for the epitaxial wafer, and belongs to the technical field of semiconductors. The epitaxial wafer comprises a substrate, a buffering layer, a non-doped gallium nitride layer, an N-type gallium nitride layer, a light-emitting layer and a P-type gallium nitride layer, wherein the buffering layer, the non-doped gallium nitride layer, the N-type gallium nitride layer, the light-emitting layer and the P-type gallium nitride layer are sequentially stacked on the substrate. The light-emitting layer comprises a plurality of quantum well layers and a plurality of quantum barrier layers. The plurality of quantum well layers and the plurality of quantum barrier layers are alternately stacked together. The quantum barrier layers are gallium nitride layers, and at least three quantum well layers, which are the nearest to the N-type gallium nitride layer, of the plurality of quantum well layers are the first quantum well layers. The plurality of quantum well layers, except the first quantum well layers, are the second quantum well layers. The first quantum well layers are non-doped indium gallium nitride layers, and the second quantum well layers comprise P-type doped indium gallium nitride layers. According to the invention, the number of holes in the quantum well layers is increased, and the hole and electron recombination illiumination efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an epitaxial wafer of a light emitting diode and a manufacturing method thereof. Background technique [0002] The semiconductor light-emitting diode (English: Light Emitting Diode, referred to as: LED) represented by gallium nitride has excellent characteristics such as large band gap, high electron saturation drift speed, high temperature resistance, and high power capacity. Its ternary alloy InGaN The band gap is continuously adjustable from 0.7ev to 3.4ev, and the emission wavelength covers the entire region of visible light and ultraviolet light, which has broad prospects in the emerging optoelectronic industry. [0003] Epitaxial wafers are semi-finished products in the manufacturing process of light-emitting diodes. The existing epitaxial wafer includes a sapphire substrate and a buffer layer, an undoped gallium nitride layer, an n-type gallium nitride layer, a lig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/32H01L33/12H01L33/00
CPCH01L33/0075H01L33/06H01L33/12H01L33/32
Inventor 刘华容万林胡加辉
Owner HC SEMITEK CORP
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