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A gallium nitride-based light-emitting diode epitaxial wafer and its preparation method

A light-emitting diode, gallium nitride-based technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problem of low recombination efficiency of electrons and holes, and achieve the effect of increasing recombination luminous efficiency and improving luminous efficiency

Active Publication Date: 2020-08-14
HC SEMITEK ZHEJIANG CO LTD
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  • Abstract
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Problems solved by technology

[0006] Embodiments of the present invention provide a gallium nitride-based light-emitting diode epitaxial wafer and a preparation method thereof, which can solve the problem of low recombination efficiency of electrons and holes in the active layer in the prior art

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  • A gallium nitride-based light-emitting diode epitaxial wafer and its preparation method
  • A gallium nitride-based light-emitting diode epitaxial wafer and its preparation method
  • A gallium nitride-based light-emitting diode epitaxial wafer and its preparation method

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Embodiment Construction

[0030] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0031] An embodiment of the present invention provides a GaN-based light-emitting diode epitaxial wafer. figure 1 A schematic structural diagram of a gallium nitride-based light-emitting diode epitaxial wafer provided by an embodiment of the present invention. see figure 1 , the GaN-based light-emitting diode epitaxial wafer includes a substrate 10, an N-type semiconductor layer 20, an active layer 30, and a P-type semiconductor layer 40, and the N-type semiconductor layer 20, the active layer 30, and the P-type semiconductor layer 40 are sequentially stacked on the substrate 10.

[0032] figure 2 A schematic structural diagram of an active layer provided by an embodiment of the present invention. see figure 2 , the active layer...

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Abstract

The invention discloses a gallium nitride-based light-emitting diode epitaxial wafer and a preparation method thereof, and belongs to the technical field of semiconductors. A gallium nitride-based light-emitting diode comprises a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer; the N-type semiconductor layer, the active layer and the P-type semiconductorlayer are sequentially stacked on the substrate; the active layer comprises a plurality of periodic structures which are stacked in sequence, wherein each periodic structure comprises quantum wells and quantum barriers which are stacked in sequence; and the periodic structure further comprises a plurality of metal nanoparticles laid between the quantum wells and the quantum barriers. The pluralityof metal nanoparticles are laid on the surfaces of the quantum wells, and electrons injected into the active layer, electrons in the quantum wells, and photons generated by hole recombination react with each other on the surfaces of the metal nanoparticles, so that the plurality of metal nanoparticles play a role of surface plasmon polariton, the composite light-emitting efficiency of electrons and holes in the quantum wells can be increased, and the light-emitting efficiency of the whole LED is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride-based light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. Gallium nitride (GaN) has good thermal conductivity, and has excellent characteristics such as high temperature resistance, acid and alkali resistance, and high hardness, so that gallium nitride (GaN)-based LEDs have received more and more attention and research. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing GaN-based LED epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, and the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially stacked on the substra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/00
CPCH01L33/007H01L33/06
Inventor 郭炳磊王群葛永晖吕蒙普胡加辉李鹏
Owner HC SEMITEK ZHEJIANG CO LTD
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