An n-sic substrate algan-based vertical structure resonant cavity ultraviolet led chip and its preparation method

Abstract

The invention discloses an n-SiC substrate AlGaN group vertical structure resonant cavity ultraviolet LED chip and a production method thereof, and belongs to the semiconductor light-emitting device field. The n-SiC substrate AlGaN group vertical structure resonant cavity ultraviolet LED chip is respectively constituted by a lower electrode layer, an n-SiC substrate, an n-Alx0Gal-x0N conductive buffer layer, an n-AlGaN group DBR lower reflecting layer, an n-Alx1Ga1-x1N current expanding layer, an AlGaN base induced tunnel junction, a p-Alx2Gal-x2N hole injection layer, an AlGaN group quantum well active region, an n-Alx3Gal-x3N electron injection layer, an n-AlGaN group DBR upper reflecting layer, and an upper electrode layer, and in addition, x0, x1,x2,x3 are greater than or equal to 0.1, and smaller than or equal to 0.9. By adopting the SiC substrate, which is matched with the AlGaN lattice in a better way, the AlGaN quality is improved, and internal quantum efficiency is improved; by adopting the resonant cavity structure, TE mode polarized light is enhanced, and light extracting efficiency of a device is improved; structure inversion is realized by the tunnel junction, and influence of polarization electric field is reduced; composite light-emitting efficiency of charge carriers in the quantum well is improved. The application range of the semiconductor ultraviolet light-emitting device is further extended.

Description

technical field [0001] The invention belongs to the field of semiconductor light-emitting devices, and in particular relates to an n-SiC substrate AlGaN-based vertical structure resonant cavity ultraviolet LED chip and a preparation method thereof. Background technique [0002] With the continuous deepening of GaN (InGaN, AlGaN)-based LED research and development, its technological innovation and application fields continue to expand, and the market is becoming wider and wider. Ultraviolet LEDs with AlGaN as the main material have gradually become the research focus of researchers. AlGaN is a direct bandgap semiconductor material. By adjusting the content of Al components, its bandgap can vary between 3.4eV and 6.2eV, and its wavelength coverage range is 365nm to 200nm, covering most of the ultraviolet band. It is the best choice for the preparation of ultraviolet LEDs. Ideal material. Compared with traditional ultraviolet light sources, AlGaN-based ultraviolet LEDs have th...

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Problems solved by technology

[0003] The purpose of the present invention is to solve the problem of low luminous efficiency of the above-mentioned ultraviolet LED, and to develop an AlGaN-based vertical LED with a tunnel junction on a conductive SiC substrate in consideration of improving the crystallization quality of the epitaxial layer, simplifying the device manufacturing process, and improving device performance. Structural Resonator UV LED

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