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A lateral ZnO nanorod array light-emitting diode

A zinc oxide nanorod, light emitting diode technology, applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of reducing light extraction efficiency, reducing effective light emitting area, and low electron injection efficiency, etc. , to achieve the effect of good light transmittance, good electronic confinement and good transmittance

Active Publication Date: 2017-02-01
SOUTHEAST UNIV
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Problems solved by technology

However, for LEDs with this structure, the upper surface is usually used as the light-emitting area, and because the p-region electrode is welded on the upper surface, it covers a large light-emitting area, resulting in a decrease in the effective light-emitting area and reducing the light extraction efficiency.
At present, most LEDs use alloys such as Ni / Au as the n-pole electrode, and its electron injection efficiency is low.

Method used

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  • A lateral ZnO nanorod array light-emitting diode
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[0035] An LED with a lateral ZnO nanorod array structure, its constituent elements include: a sapphire substrate (101), a silicon dioxide insulating layer (102), a gallium nitride buffer layer (103), a p-region electrode (106), a block state n + -ZnO(104), p-region electrodes and bulk n + - ZnO nanorod arrays between -ZnO (107), n + - ITO-ZnO film (105) on ZnO as n-region electrode.

[0036] Among them, ZnO nanorods are obtained by high-temperature thermal evaporation method, and then prepared at equal intervals by p-region electrodes and n + Between the two platforms constructed by -ZnO, the two ends of the nanorods are trimmed into regular shapes by using the focused ion beam method.

[0037] ZnO material has a wide band gap and high exciton binding energy, and has good chemical stability, oxidation resistance, moisture resistance, and high temperature resistance, and is suitable for making ultraviolet and blue LEDs. By adjusting the block n + -The Ga doping amount of Z...

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Abstract

The invention discloses a transverse zinc oxide nanorod array light emitting diode. The transverse zinc oxide nanorod array light emitting diode comprises a sapphire substrate (101), a silicon dioxide insulating layer (102) and a gallium nitride buffer layer (103) which are sequentially arranged from bottom to top. A p-region electrode (106) is arranged on one lateral side of a rectangular etching groove in the gallium nitride buffer layer (103), a piece of blocky n<+>-ZnO (104) is arranged on the other lateral side, opposite to the lateral side, of the rectangular etching groove, and an n-region electrode (105) of an ITO-ZnO film is arranged on the blocky n<+>-ZnO (104). The transverse zinc oxide nanorod array light emitting diode further comprises a ZnO nanorod array (107), an n-type region and a p-type region are arranged at the two ends of the ZnO nanorod array respectively, and meanwhile the ZnO nanorod array is connected with the p-region electrode (106) and the blocky n<+>-ZnO (104) through the p-type region and the n-type region respectively. The transverse zinc oxide nanorod array light emitting diode is high in both light extraction efficiency and electron injection efficiency and meanwhile low in cost.

Description

technical field [0001] The invention relates to an LED chip with a horizontal zinc oxide nanorod array structure as an active light-emitting region structure, and belongs to the field of optoelectronic materials and device manufacturing. Background technique [0002] In recent years, LED, as a new type of solid-state light source, has attracted widespread attention because of its advantages such as energy saving, environmental protection, long life, high efficiency, small size, easy integration with microelectronic devices, easy mass production, and low operating voltage. Rapid development and wide application. [0003] Traditional LEDs usually adopt a vertical structure. Literature: Lu Dacheng, Duan Shukun. Fundamentals and applications of vapor phase epitaxy of metal organic compounds. [M]. Beijing: Science Press, 2009, discloses a LED structure, the LED structure is through the bottom It is obtained by growing multi-layer thin films on top and doping the thin films as re...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/28
CPCB82Y30/00B82Y40/00H01L33/28H01L33/40
Inventor 张雄王翼崔一平
Owner SOUTHEAST UNIV
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