Efficient perovskite solar cell and preparation method thereof

A solar cell and perovskite technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as limiting the wide application of perovskite cells, being sensitive to components such as water and oxygen, and destroying device stability, and achieving good application prospects. , low cost, the effect of improving important performance parameters

Active Publication Date: 2016-03-23
UNIV OF SCI & TECH BEIJING
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  • Description
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  • Application Information

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Problems solved by technology

However, it has high requirements on the quality of materials, and it is sensitive to components such as water and oxygen, which seriously damages the stability of the device and limits the wide application of perovskite batteries.

Method used

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  • Efficient perovskite solar cell and preparation method thereof
  • Efficient perovskite solar cell and preparation method thereof
  • Efficient perovskite solar cell and preparation method thereof

Examples

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preparation example Construction

[0034] The present invention also provides a method for preparing the above-mentioned high-efficiency perovskite solar cell, the specific preparation steps are as follows:

[0035] Step 1: Wash the conductive substrate through the traditional substrate cleaning process (ethanol, acetone, isopropanol alternate ultrasonic 10-60min), blow dry with nitrogen for later use;

[0036] Step 2: Deposit a semiconductor oxide transport layer on the conductive substrate treated in step 1 to collect and transport electrons or holes. The deposition thickness is 10-200nm, the deposition temperature is 10-300°C, and the annealing temperature is 300-500°C for sealing save;

[0037] Step 3: Prepare a layer of insulating buffer layer by deposition method on the conductive substrate deposited with electron transport layer after step 2; wherein, the material of the insulating buffer layer is Al 2 o 3 , ZrO 2 , SiO 2 , MgO, Ga 2 o 3 , ZrO 2 , Nb 2 o 5 、 Ta 2 o 5 or HfO 2 . The thickness...

example 1

[0048] Example 1: ZnO-based perovskite solar cells (without introducing an insulating buffer layer)

[0049] Clean the conductive glass substrate (FTO / ITO) with high light transmittance, alternately ultrasonicate ethanol, acetone, and isopropanol for 10-60 minutes, and dry it with nitrogen gas for later use. Treat the conductive base by wet etching to obtain the target pattern of the transparent substrate. The n-type semiconductor oxide film (ZnO film) is prepared by magnetron sputtering technology to collect and transmit electrons. The deposition thickness is 10-200nm, the deposition temperature is 10-300°C, and the annealing temperature is 300-500°C for sealed storage.

[0050] TiO 2 The diluted slurry made of particles, the dilution ratio is 1:10, the spin coating speed is 2500rpm-5500rpm, and the high temperature annealing is 300-600℃. After cooling, spin-coat PbX with a concentration of 300-600mg / ml 2 (dissolved in dimethylformamide), dissolved at 70°C for 10-24h until...

example 2

[0051] Example 2: ZnO-based perovskite solar cells (insulating buffer layer introduced)

[0052] Clean the conductive glass substrate (FTO / ITO) with high light transmittance, alternately ultrasonicate ethanol, acetone, and isopropanol for 50 minutes, and dry it with nitrogen gas for later use. Treat the conductive base by wet etching to obtain the target pattern of the transparent substrate. The n-type semiconductor oxide thin film (ZnO thin film) was prepared by magnetron sputtering technology to collect and transmit electrons. The deposition thickness was 50nm, the deposition temperature was 50°C, and the annealing temperature was 300°C for sealed storage.

[0053] TiO 2 The diluted slurry made of particles, the dilution ratio is 1:5, the spin coating speed is 5500rpm, and the high temperature annealing is at 500°C. After cooling, spin-coat PbX with a concentration of 460mg / ml 2 (dissolved in dimethylformamide), dissolved at 70°C for 10h until completely dissolved, and th...

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Abstract

The invention relates to a photovoltaic cell, and provides an efficient perovskite solar cell and a preparation method thereof. Structure of the perovskite solar cell is traditional mesoporous structure which comprises a conductive substrate, a semiconductor oxide transmission layer, a mesoporous layer, an organic and inorganic hybrid perovskite layer, a hole transport layer and a metal counter electrode. An insulation buffer layer is introduced into the traditional mesoporous cell structure, and then construction of the efficient perovskite solar cell is achieved. After the buffer thin layer is added into the cell, inhibition of electron-hole recombination at an interface position is facilitated, but a photocurrent is often reduced due to an introduction of an insulation material. However, through interface regulations and control, a current does not decline but is enhanced after the insulation buffer layer is added, cell performance is improved, and a new preparation approach is provided for the efficient perovskite solar cell. The method is simple in process and low in cost, is in favor of improving optical performance and stability of a perovskite photovoltaic device, and has a good application prospect.

Description

technical field [0001] The invention belongs to the field of photovoltaic solar cells of nanometer functional devices, and relates to the preparation of high-efficiency perovskite solar cells, in particular to a high-efficiency perovskite solar cell and a preparation method thereof. Background technique [0002] Energy is an important basic condition for social and economic development. So far, the development of human society still mainly relies on fossil energy. But the distribution of fossil energy on the earth is extremely uneven, and will eventually be exhausted. In addition, the environmental pollution, smog and greenhouse effect caused by burning fossil energy seriously threaten the sustainable development of human society. Solar cells can directly convert solar energy into electrical energy, and can provide inexhaustible clean energy for the development of human society. It is an important countermeasure for human society to deal with energy crisis, solve environmen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/042H01L31/0352H01L31/18
CPCH01L31/0352H01L31/042H01L31/18Y02E10/50Y02P70/50
Inventor 张跃司浩楠廖庆亮张光杰马明园
Owner UNIV OF SCI & TECH BEIJING
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