Improved solar cell front electrode and its production method

A technology of a solar cell and a manufacturing method, which is applied in the field of solar energy, can solve the problems of reduced short-circuit current, large contact area, and reduced photoelectric conversion efficiency of solar cells, and achieves improved photoelectric conversion efficiency, good short-wave spectral response, and less hole recombination. Effect

Inactive Publication Date: 2009-04-08
SUN YAT SEN UNIV
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  • Summary
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  • Description
  • Claims
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Problems solved by technology

The disadvantage of this structure is that the contact area of ​​the metal-semiconductor interface 8 is large, and there are a large number of interface energy states at the metal-semiconductor interface 8, and electrons and holes are easy to recombine through these interface energy states, making the short-circuit current of the solar cell Decrease, lower photoelectric conversion efficiency

Method used

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  • Improved solar cell front electrode and its production method
  • Improved solar cell front electrode and its production method
  • Improved solar cell front electrode and its production method

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Embodiment Construction

[0020] Such as figure 2 As shown, the beam bridge electrode of the present invention is composed of two parts of electrodes: one part is the pier part 6, which penetrates the passivation dielectric film 2, and the bottom forms a point contact with the emission area 4 of the solar cell; the other part is the bridge part 7, This part of the electrode is covered on the pier part 6 and the passivation medium film 2 of the solar cell, and the bottom is not in direct contact with the emission area 4 of the solar cell, and it only plays the role of connecting the pier part 6 and conducting current. In the embodiment of the present invention, the bridge pier parts 6 of the beam bridge electrodes are equidistantly distributed on the front surface of the solar cell, and the bridge part 7 of the beam bridge electrode is connected to each bridge pier part 6 distributed on the front surface of the solar cell. The beam bridge electrode is only in contact with the emitter region 4 of the so...

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Abstract

The invention discloses an improved front electrode of a solar cell, the structure of which is similar to a beam bridge. The front electrode consists of two electrode parts, one of which is a pier part, penetrates a passive dielectric film, and has a bottom in point contact with an emitter region of the solar cell; and the other part of which is a bridge part, covers on the pier part and the passive dielectric film of the solar cell, and has a bottom which does not directly contact the emitter region of the solar cell. The beam bridge electrode only contacts the emitter region of the solar cell at a local position, and compared with the common solar cells, the beam bridge electrode has a smaller metal-semiconductor contact area, therefore, electron-hole recombination caused by metal-semiconductor interfacial energy state is less, the shortwave spectral response of the cell is better, thus being helpful to improving the photoelectric conversion efficiency of the solar cell.

Description

technical field [0001] The invention belongs to the technical field of solar energy, and in particular relates to a solar battery front electrode and a manufacturing method thereof. Background technique [0002] A solar cell is a semiconductor device that directly converts solar energy into electrical energy based on the photovoltaic effect. Such as figure 1 As shown, a general solar cell is mainly composed of a pn junction 1, a passivation dielectric film 2, a front electrode 3, an aluminum back electric field and a back electrode ( figure 1 Aluminum back electric field and back electrode are not shown). When light shines on a solar cell, electron-hole pairs are generated inside the solar cell. Under the action of the built-in electric field of the pn junction, electrons and holes migrate to the n region (emitter region) 4 and the p region (base region) 5, thereby generating a certain potential difference between the emitter region and the base region. The front electro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/18
CPCY02P70/50
Inventor 沈辉张陆成梁宗存杨灼坚
Owner SUN YAT SEN UNIV
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