Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of dry process black silicon battery

A black silicon, battery technology, applied in circuits, electrical components, final product manufacturing, etc., can solve problems such as difficult to achieve

Inactive Publication Date: 2019-07-26
JIANGSU GREEN POWER PV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is a contradiction between its excellent anti-reflection performance and serious carrier recombination and collection, and it is difficult to achieve a good balance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] (1), acid corrosion texturing

[0031] The ingredients used are HF: HNO 3 :H 2 A mixed solution of O=2:4:3 (volume ratio) is used for texturing diamond wire polysilicon wafers.

[0032] (2), RIE Texturing

[0033] Use volume ratio as SF 6 :0 2 :Cl 2 =8:10:5 mixed gas, the plasma etches the front surface of the textured silicon wafer to form a nano-textured surface, SF 6 The flow rate is 1600sccm, O 2 The flow rate is 2000sccm, Cl 2 The flow rate is 1000sccm, the pressure is 30 Pa, the speed is 18mm / s, the micro-nano opening width is controlled at 300-400mm, and the depth is at 150-190nm. Reflectivity 4-7%;

[0034] (3), cleaning after RIE

[0035] The ingredients used are BOE: H 2 o 2 :H 2 The mixed solution of O=1:2:3 (volume ratio) was used to optimize the texture of the silicon wafer after RIE, the reaction time was 7min, and the reaction temperature was 40°C. Then perform water washing-HF washing-water washing-HCl washing-water washing in order to remo...

Embodiment 2

[0046] (1), acid corrosion texturing

[0047] The ingredients used are HF: HNO 3 :H 2 A mixed solution of O=2:4:3 (volume ratio) is used for texturing diamond wire polysilicon wafers.

[0048] (2), RIE Texturing

[0049] Use volume ratio as SF 6 :0 2 :Cl 2 =8:10:5 mixed gas, the plasma etches the front surface of the textured silicon wafer to form a nano-textured surface, SF 6 The flow rate is 1120sccm, O 2The flow rate is 1400sccm, Cl 2 The flow rate is 700sccm, the pressure is 25 Pa, the speed is 10mm / s, the micro-nano opening width is controlled at 300-400mm, and the depth is at 150-190nm. Reflectivity 4-7%;

[0050] (3), cleaning after RIE

[0051] The ingredients used are BOE: H 2 o 2 :H 2 The mixed solution of O=1:2:3 (volume ratio) was used to optimize the texture of the silicon wafer after RIE, the reaction time was 6 minutes, and the reaction temperature was 40°C. Then perform water washing-HF washing-water washing-HCl washing-water washing in order to r...

Embodiment 3

[0062] (1), acid corrosion texturing

[0063] The ingredients used are HF: HNO 3 :H 2 A mixed solution of O=2:4:3 (volume ratio) is used for texturing diamond wire polysilicon wafers.

[0064] (2), RIE Texturing

[0065] Use volume ratio as SF 6 :0 2 :Cl 2 =8:10:5 (volume ratio) mixed gas, plasma etches the positive surface of the silicon wafer after texturing to form nano-texture, SF 6 The flow rate is 1600sccm, O 2 The flow rate is 2000sccm, Cl 2 The flow rate is 1000sccm, the pressure is 30 Pa, the speed is 18mm / s, the micro-nano opening width is controlled at 300-400mm, and the depth is at 150-190nm. Reflectivity 4-7%;

[0066] (3), cleaning after RIE

[0067] The ingredients used are BOE: H 2 o 2 :H 2 The mixed solution of O=1:2:3 (volume ratio) was used to optimize the texture of the silicon wafer after RIE, the reaction time was 8min, and the reaction temperature was 40°C. Then perform water washing-HF washing-water washing-HCl washing-water washing in ord...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
reflectanceaaaaaaaaaa
reflectanceaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the technical field of battery piece production, and specifically relates to a preparation method of a dry process black silicon battery. Compared with a traditional preparation method of the dry process black silicon battery, the width and depth of a black silicon nanometer texture are controlled by adjusting the technological parameters of RIE, the surface recombinationof black silicon is reduced, and the short weave spectral response is promoted. Simultaneously, an SiO2 film is prepared by using a thermal oxidation technology, the SiO2 film is supplemented with anSiNx film, an emitting diode is passivated through a synergistic effect, the surface recombination of black silicon is further reduced, the open-circuit voltage is promoted, and finally, the purpose of promoting the conversion efficiency of a battery piece is reached.

Description

technical field [0001] The invention belongs to the technical field of cell sheet production, in particular to a method for preparing a dry-process black silicon cell. Background technique [0002] Among the global crystalline silicon photovoltaic products, polycrystalline products still account for more than 50% of the market demand. Polycrystalline products have the characteristics of low price per watt, mature technology and high module reliability, which effectively reduces the risk of photovoltaic power plants and provides reliable guarantee for the income of photovoltaic power plants. [0003] The polycrystalline black silicon texturing process is mainly dry texturing, and the dry black silicon texturing process is reactive ion etching (Reactive Ion Etching, RIE). Nanostructures are formed on the silicon surface, thereby reducing the reflectivity of polycrystalline black silicon. This process does not improve the efficiency of polycrystalline cells very much. [000...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/18Y02P70/50
Inventor 沈晓
Owner JIANGSU GREEN POWER PV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com