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A kind of preparation method of high-efficiency solar cell

A solar cell, high-efficiency technology, applied in the field of solar cells, can solve the problem of high cost, achieve the effect of reducing cost consumption, saving cost consumption, and reducing process complexity

Active Publication Date: 2018-09-18
TRINA SOLAR CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It simply uses back polishing technology, and the back polishing uses HNO 3 / HF / H 2 SO 4 Mixed solution, higher cost

Method used

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  • A kind of preparation method of high-efficiency solar cell

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Experimental program
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Effect test

Embodiment 1

[0033] After cleaning and texturing the raw silicon wafers, one-sided low-resistance diffusion is carried out in a phosphorus oxychloride atmosphere, and the resistance after diffusion is controlled at 50Ω / ◇; the diffusion side of the silicon wafers is placed in an alkali tank chain back polishing machine. The feeding end of the material passes through an alkali tank containing a KOH aqueous solution with a concentration of 60 °C and a mass percentage of 20% at a rate of 1.5 m / min, and the backside is polished in the KOH aqueous solution for 8.0min. The residual alkali is washed in the pure water tank of water, and the upper and lower surfaces of the silicon wafer are dried in the drying section, and the silicon wafer is smoothly taken out from the blanking end.

[0034] To make a selective emitter:

[0035] a. Put the back-polished silicon wafer into the INK printer to print ink on the electrode grid line area of ​​the silicon wafer as a mask, and dry it.

[0036] b. Put the...

Embodiment 2

[0043] After the raw silicon wafer is cleaned and textured, one-sided low-resistance diffusion is carried out in a phosphorus oxychloride atmosphere, and the resistance after diffusion is controlled at 55Ω / ◇; the diffusion side of the silicon wafer is placed in an alkali tank chain back polishing machine. The feeding end of the silicon wafer passes through an alkali tank containing a KOH aqueous solution with a concentration of 80 ℃ and a mass percentage of 10% at a rate of 2.2m / min, and the backside is polished in the KOH aqueous solution for 5.5min. After the backside polishing is completed, the silicon wafer is filled with pure water. The residual alkali is washed in the pure water tank, and the upper and lower surfaces of the silicon wafer are dried in the drying section, and the silicon wafer is smoothly taken out from the blanking end.

[0044] To make a selective emitter:

[0045] a. Put the back-polished silicon wafer into the INK printer to print ink on the electrode ...

Embodiment 3

[0053] After cleaning and texturing the raw silicon wafers, one-sided low-resistance diffusion is carried out in a phosphorus oxychloride atmosphere, and the resistance after diffusion is controlled at 52Ω / ◇; the diffusion side of the silicon wafers is placed in an alkali tank chain back polishing machine. The feeding end of the silicon wafer passes through an alkali tank containing a NaOH aqueous solution with a concentration of 70°C and a mass percentage of 35% at a rate of 1.8m / min, and the backside is polished in the NaOH aqueous solution for 6.67min. After the backside polishing is completed, the silicon wafer is filled with pure water. The residual alkali is washed in the pure water tank, and the upper and lower surfaces of the silicon wafer are dried in the drying section, and the silicon wafer is smoothly taken out from the blanking end.

[0054] To make a selective emitter:

[0055] a. Put the back-polished silicon wafer into the INK printer to print ink on the electr...

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Abstract

The invention discloses a preparation method for an efficient solar cell. The preparation method comprises the steps of performing texturing, diffusing and polishing on a raw material silicon wafer, and manufacturing a selective emitting electrode, plating an anti-reflection film, performing silk-screen printing, and sintering to obtain the efficient solar cell. According to the preparation method, the step of polishing is performed before the step of manufacturing the selective emitting electrode; a selective emitting electrode preparing technology and a back polishing technology are combined, so that a large amount of cost consumption for HNO3 and HF can be saved; the preparation method is simple and easy to implement; compared with an IBC cell, a heterojunction cell, and other efficient solar cells, the efficient solar cell prepared by the invention can reduce complexity of process, and the large-scale production can be realized; and in addition, the Uoc, Isc and Eff of the solar cell prepared by the preparation method are greatly improved.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a preparation method of a high-efficiency solar cell. Background technique [0002] With the rapid development of the photovoltaic industry, crystalline silicon solar cells have developed rapidly due to their cost-effective advantages. At present, in the field of crystalline silicon solar cells, the selective emitter technology or the back polishing technology is generally used to prepare solar cells. Square resistance diffusion (general temperature is 800℃-850℃, diffusion square resistance is 70Ω / ◇-100Ω / ◇), back silver and aluminum paste are printed on the back, then dried, sintered and coated with anti-reflection film to obtain high-efficiency solar cells. Chinese patent application CN 201410694985.2 discloses a preparation method of a polycrystalline silicon solar cell made of RIE texturing, comprising the following steps: (1) using plasma dry etching to remove the front surface da...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0352H01L21/02
CPCH01L21/02016H01L21/02024H01L31/035272H01L31/1804Y02E10/547Y02P70/50
Inventor 肖斌宋慧娟
Owner TRINA SOLAR CO LTD
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