Method for forming inverted pyramid-shaped porous surface nano-texture on polysilicon and method for preparing short-wave enhanced solar cell

An inverted pyramid-shaped, porous surface technology, used in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as limiting photoelectric conversion efficiency, and achieve high short-wave spectral response, low surface reflectivity, and low cost.

Inactive Publication Date: 2016-04-27
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, even with optimally configured chemical etching methods and optical antireflection coatings, polycrystalline silicon solar cells still have a rather high surface reflectivity, thus limiting their photoelectric conversion efficiency

Method used

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  • Method for forming inverted pyramid-shaped porous surface nano-texture on polysilicon and method for preparing short-wave enhanced solar cell
  • Method for forming inverted pyramid-shaped porous surface nano-texture on polysilicon and method for preparing short-wave enhanced solar cell
  • Method for forming inverted pyramid-shaped porous surface nano-texture on polysilicon and method for preparing short-wave enhanced solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] In this example, see Figure 1 to Figure 6 , a method for forming an inverted pyramid-shaped porous surface nanotexture on polysilicon, comprising the steps of:

[0037] (1) Use solar-grade polysilicon as the substrate material, which is P Type boron doping, the thickness is 200mm, the minority carrier lifetime is 2ms, and the resistivity is 3Ωcm; 3 h 6 O carry out 5 minutes ultrasonic cleaning to the silicon wafer as solar cell silicon substrate material, remove the organic residue on the surface of silicon wafer; 3 =(1:10), etch under the condition of 5°C, the reaction time is 3.5 minutes, so as to remove the mechanical damage layer on the surface of the silicon wafer, and its cross-sectional structure is shown in figure 1 , surface reflectance see Figure 4 ;

[0038] (2) Then, the silicon wafer is immersed in 0.004mol / LHF and 0.32mol / LAgNO 3 In an aqueous solution, react at room temperature for 15-20 seconds to deposit nano-silver particles on its surface; sil...

Embodiment 2

[0043] This embodiment is basically the same as Embodiment 1, especially in that:

[0044] In this example, see Figure 5 and Figure 6 , the nb-Si material sample was first immersed in dilute HF solution to remove its surface oxide layer, and then immediately immersed in 1% NaOH etching solution, the reaction time was 3 minutes, and the reaction temperature was room temperature. from Figure 5 It can be seen that in the wavelength range of 580-1000 nm, the surface reflectance of the IP-Si battery of this embodiment is lower than that of the nb-Si battery of Comparative Example 2. from Figure 6 It can be seen that the nb-Si of Comparative Example 2 and the IP-Si battery of this embodiment EQE Curves and calculated photogenerated current densities J sc : respectively 24.8mA / cm 2 and 31.6mA / cm 2 , the photogenerated current density of the IP-Si battery of this embodiment is higher than that of the nb-Si battery of Comparative Example 2.

Embodiment 3

[0046] This embodiment is basically the same as Embodiment 1, especially in that:

[0047] In this example, see Figure 5 and Figure 6 , the nb-Si material sample was first immersed in dilute HF solution to remove its surface oxide layer, and then immediately immersed in 1% NaOH etching solution, the reaction time was 9 minutes, and the reaction temperature was room temperature. from Figure 5 It can be seen that in the wavelength range of 580-1000 nm, the surface reflectance of the IP-Si battery of this embodiment is lower than that of the nb-Si battery of Comparative Example 2. from Figure 6 It can be seen that the nb-Si of Comparative Example 2 and the IP-Si battery of this embodiment EQE Curves and calculated photogenerated current densities J sc : respectively 24.8mA / cm 2 and 32.8mA / cm 2 , the photogenerated current density of the IP-Si battery of this embodiment is higher than that of the nb-Si battery of Comparative Example 2.

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Abstract

The invention discloses a method for forming an inverted pyramid-shaped porous surface nano-texture on polysilicon and a method for preparing a short-wave enhanced solar cell, which are suitable for the technical field of solar photovoltaic cells. The present invention utilizes the metal-catalyzed chemical corrosion method to form a nanoporous surface structure on the polycrystalline silicon wafer through solutions such as HF, AgNO3, H2O2 and HNO3; , forming a nano-inverted pyramid silicon structure, its microstructure is more uniform and flat, which greatly improves the effective minority carrier lifetime; finally, on the nano-textured surface structure, by changing the silicon nitride layer in the solar cell preparation process Nano-inverted pyramid silicon solar photovoltaic cells with low surface reflectivity and high short-wave spectral response were prepared. The method of the invention has simple process, convenient operation, low cost and is suitable for industrial production.

Description

technical field [0001] The invention relates to a method for surface treatment of silicon crystals and a subsequent method for preparing solar photovoltaic cells, in particular to a method for preparing nanoporous black silicon to form the surface texture of silicon crystals by using a metal-catalyzed chemical corrosion process and the method for silicon The invention discloses a method for preparing a crystalline solar cell, which is applied in the technical field of solar photovoltaic cells. Background technique [0002] The reflectivity of the untreated pristine polycrystalline silicon surface is very high, so the optical loss of polycrystalline silicon solar cells prepared directly from this material is quite large, which greatly limits the photoelectric conversion efficiency of the cell. In order to increase the absorptivity of incident light, the traditional anisotropic / isotropic chemical etching method is a relatively mature method in the industry, which can prepare m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352H01L31/0236H01L31/18
CPCY02E10/50Y02P70/50
Inventor 马忠权石建伟徐飞
Owner SHANGHAI UNIV
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