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Quantum dot and preparation method thereof

A technology of quantum dots and semiconductors, applied in the field of quantum dots, can solve the problems of low luminous efficiency of cadmium-free quantum dot materials

Pending Publication Date: 2019-06-25
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the above deficiencies in the prior art, the object of the present invention is to provide a quantum dot and its preparation method and application, aiming to solve the problem of low luminous efficiency of existing cadmium-free quantum dot materials

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preparation example Construction

[0083] The present invention also provides a method for preparing quantum dots, comprising the steps of:

[0084] In a reaction system containing a dispersant and a solvent, the non-metallic precursor and the first metal precursor are reacted to form a quantum dot nucleus solution;

[0085] Adding a second metal precursor to the quantum dot core solution to form a metal layer on the surface of the quantum dot core;

[0086] forming a semiconductor shell on the surface of the metal layer;

[0087] Wherein, the second metal precursor is selected from one or more of a precursor of Zn element, a precursor of Hg element, a precursor of Al element, a precursor of Ga element and a precursor of In element.

[0088]The quantum dots prepared by the method of the present invention form a metal layer covering the quantum dot core on the surface of the quantum dot core, and the metal layer can use the ligand on the surface of the quantum dot core as a link to connect with the quantum dot ...

Embodiment I

[0141] The preparation of the InP quantum dot core of this embodiment comprises the following steps:

[0142] Add 0.14 mmol of indium acetate, 0.6 mmol of oleic acid and 20 g of octadecene into a 100 mL three-necked flask, and ventilate at 150 degrees for 30 minutes to remove water and oxygen in the reaction system;

[0143] After the reaction system is filled with argon, the temperature is raised to 250 degrees;

[0144] Quickly inject 0.1 mmol P(TMS) into the reaction system 3 (Tris-trimethylsilylphosphorus) and 2 mL of octadecene were reacted at 250 degrees for 20 minutes to obtain InP quantum dot cores.

Embodiment 2

[0146] The preparation of the InPZnS quantum dot nucleus of this embodiment comprises the following steps:

[0147] Add 0.18 mmol of indium chloride, 1 mL of tetrahydrofuran, 1 mmol of zinc acetate, 0.6 mL of oleic acid and 9 mL of octadecene into a 100 mL three-neck flask, and exhaust the water at 150°C for 30 minutes to remove water in the reaction system and oxygen;

[0148] After the reaction system is filled with argon, the temperature is raised to 280 degrees;

[0149] Quickly inject 0.06 mmol P(TMS) into the reaction system 3 (Tris-trimethylsilylphosphorus), 0.4 mmol sulfur, 0.5 mL trioctylphosphine (TOP) and 0.5 mL octadecene, and reacted at 280 degrees to obtain InPZnS quantum dot cores.

[0150] InPZnS quantum dot cores with different luminous wavelengths and luminous intensities can be obtained according to the reaction time. For example, the luminous wavelength of the InPZnS quantum dot core obtained when reacting for 20 seconds is 504 nm, and the luminous effici...

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Abstract

The invention discloses a quantum dot and a preparation method thereof. The quantum dot comprises a quantum dot core, a first metal layer covering the quantum dot core, a first semiconductor shell layer covering the first metal layer, a second metal layer covering the first semiconductor shell layer, and a second semiconductor shell layer covering the second metal layer, wherein the metal elementsin the first metal layer and the second metal layer are independently one or a plurality of elements selected from Zn, Hg, Al, Ga and In. According to the present invention, the metal layer can be bonded to the quantum dot core by using the ligand on the surface of the quantum dot core as the linker so as to promote the surface activation of the quantum dot core, such that the further growth reaction of the semiconductor shell layer outside the quantum dot can be easily performed; and through the crystal structure formed by bonding the metal atom in the metal layer and the quantum dot core, the surface of the quantum dot core can be effectively passivated, the surface defect can be reduced, and the lattice mismatch between the core and the shell can be reduced, such that the light emitting efficiency and the size uniformity of the quantum dot material can be enhanced.

Description

technical field [0001] The invention relates to the technical field of quantum dots, in particular to a quantum dot and a preparation method thereof. Background technique [0002] Quantum dots are a special material that is confined to the order of nanometers in three dimensions. This remarkable quantum confinement effect makes quantum dots have many unique nanometer properties, such as continuously adjustable emission wavelength, narrow emission wavelength, Broad absorption spectrum, high luminous intensity, long fluorescence lifetime and good biocompatibility, etc. These characteristics make quantum dot materials have broad application prospects in biomarkers, flat panel displays, solid-state lighting, photovoltaic solar energy and other fields. [0003] The size of quantum dots is usually below 20nm, so the specific surface area of ​​quantum dot materials is very large, and the surface characteristics and properties of quantum dots have a significant impact on the perfor...

Claims

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Application Information

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IPC IPC(8): C09K11/88C09K11/02B82Y20/00B82Y30/00B82Y40/00
Inventor 杨一行聂志文
Owner TCL CORPORATION
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