This application belongs to the field of
photodetector technology, and relates to a method for preparing a
metal-doped A2BX5
crystal, a thin film thereof, and a
photodetector. The method for preparing the
metal-doped A2BX5
crystal includes providing a first
mixed solution comprising AX, BX2, CX2, and a first
solvent; subjecting the first
mixed solution to a first heat treatment to obtain a second
mixed solution; adding a
metal chelating agent to the second mixed solution to obtain a third mixed solution; adding a second
solvent to the third mixed solution and performing a second heat treatment to obtain a metal-doped A2BX5
crystal, wherein C is doped in the A2BX5 crystal. The metal chelating agent can bind with B ions in the third mixed solution to form a dynamic supramolecular coordination structure, thereby limiting the
nucleation rate of B ions and improving the stability of the metal-doped A2BX5 crystal.