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A SrO-based resistive memory and a preparation method thereof

A technology of resistive variable memory and top electrode, which is applied in the direction of electrical components, etc., can solve the problems of high erasing voltage and slow erasing speed, and achieve the effects of small erasing voltage, improved storage density, and good resistance variable performance

Active Publication Date: 2019-01-25
陕西翱翔辐射探测科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the non-volatile memory on the market is mainly based on flash memory (Flash), but the flash memory itself still faces many defects and problems, such as too slow erasing and writing speed, too high erasing and writing voltage, etc.
The biggest bottleneck of flash memory is the limit of size reduction, which will directly cause the storage density of flash memory to approach its physical limit

Method used

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  • A SrO-based resistive memory and a preparation method thereof
  • A SrO-based resistive memory and a preparation method thereof
  • A SrO-based resistive memory and a preparation method thereof

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Embodiment Construction

[0020] Now in conjunction with embodiment, accompanying drawing, the present invention will be further described:

[0021] The strontium oxide-based RRAM of the present invention has a metal-insulator-metal (MIM) structure, the top electrode and the bottom electrode of the MIM structure are respectively metal electrodes, and the intermediate dielectric layer of the structure is an amorphous strontium oxide thin film. Wherein, the top electrode is a Sn-Cu alloy (Sn / 99.7%, Cu / 0.3%), and the thickness is between 200nm and 500nm. The bottom electrode is commercially available platinum / titanium / silicon dioxide / silicon (Pt / Ti / SiO 2 / Si) composite substrate, the thickness of Pt is between 100nm and 200nm.

[0022] A preparation method of SrO-based resistive variable memory, the steps comprising:

[0023] Step 1: growing a layer of SrO insulating layer on the Pt of the composite substrate;

[0024] Step 2: sputtering a layer of Pt as a protective layer;

[0025] Step 3: Obtain a t...

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Abstract

The invention relates to a resistive memory and a preparation method thereof, belonging to the technical field of information storage devices. The Resistive memory metal-insulator-metal (MIM) structure has a sandwich structure, wherein the top electrode and the bottom electrode of the MIM structure are respectively metal electrodes, and the resistance medium between the metal electrodes is an amorphous strontium oxide film. As that strontium oxide thin film is use as a resistive material, the resistive memory with low power consumption, high storage window and good stability can be prepare, thus having the potential of multi-value storage and high density storage.

Description

technical field [0001] The invention belongs to the technical field of information storage devices, and specifically relates to the development and research of important components of new non-volatile information storage devices, and more specifically to a SrO-based resistive variable memory and a preparation method thereof. Background technique [0002] Memory (Memory) is a memory device used to store various data and programs in modern information technology, and usually uses two stable state storage units to realize the storage function. With the array composed of a large number of memory cells as the core, plus the necessary address decoding, read and write control circuits, it becomes a memory integrated circuit; then add the necessary I / O interface and some auxiliary circuits, it becomes a memory chip. At present, the non-volatile memory on the market is mainly based on flash memory (Flash), but the flash memory itself still faces many defects and problems, such as too...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/24H10N70/883H10N70/011
Inventor 谭婷婷杜怡行曹爱查钢强陈勇
Owner 陕西翱翔辐射探测科技有限公司
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