The application discloses a kind of multi-element
oxide doped
indium zinc oxide target material and preparation method and application thereof, and the doped
indium zinc oxide target material of the application includes the following
mass percentage components: the content of
indium oxide is 80.0%~88.6%;The content of
zinc oxide is 10.9%~15.8%, the content of
strontium oxide is 0.2%~1.8%, the content of
bismuth oxide is 0.2%~0.6%, the content of
vanadium oxide is 0.4%~1.2%, and the sum of each component is 100%.The target material is prepared by adding
strontium oxide,
bismuth oxide and
vanadium oxide
powder, mixing ball milling, pressing forming and
sintering, the density of the target material is improved, the resistivity of the target material is reduced, the grain size of the sintered target material is uniform, the strength of the target material is improved, and the performance of the target material is effectively improved.The
electrical stability of the thin film and the thin film mobility are effectively improved by
sputtering the prepared multi-element oxide doped IZO target material.