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37 results about "Organic interface" patented technology

Organic electroluminescent device

An object of the invention is to achieve an organic EL device which is resistant to a deterioration of an inorganic-organic interface, has performance equivalent or superior to that of a prior art device comprising hole and electron injecting and transporting layers using an organic substance, possesses an extended life, weather resistance and high stability, and is inexpensive. This object is accomplished by the provision of an organic EL device which comprises a substrate, a hole injecting electrode and a cathode formed on the substrate, and an organic substance-containing light emitting layer located at least between these electrodes, wherein an inorganic insulating electron injecting and transporting layer is located between the light emitting layer and the cathode, and an inorganic insulating hole injecting and transporting layer is located between the light emitting layer and the hole injecting electrode. The inorganic insulating electron injecting and transporting layer comprises as a main component one or two or more oxides selected from the group consisting of strontium oxide, magnesium oxide, calcium oxide, lithium oxide, rubidium oxide, potassium oxide, sodium oxide and cesium oxide, and the inorganic insulating hole injecting and transporting layer comprises as a main component an oxide of silicon and/or an oxide of germanium. The main component has an average composition represented by (Si1-xGex) Oy where 0</=x</=1, and 1.7</=y</=1.99. The light emitting layer comprises a layer made up of a host substance on a side thereof contiguous to the inorganic insulating electron injecting and transporting layer and/or the inorganic insulating hole injecting and transporting layer. A layer containing a dopant in addition to the host substance is located on the side of the light emitting layer that faces away from the layer made up of the host substance or between them.
Owner:TDK CORPARATION

High-strength aluminum film plating compound adhesive and preparation method thereof

ActiveCN104312522AUnable to meet packaging requirementsLow peel strengthPolyureas/polyurethane adhesivesPolyesterPolyurethane adhesive
The invention discloses a high-strength aluminum film plating compound adhesive and a preparation method of the high-strength aluminum film plating compound adhesive. A main adhesive body is polyester polyol with a dimer acid structure, a curing agent is a NCO prepolymer with a dimer acid structure, and the ratio of the main adhesive body to the curing agent is 5:1 to 5:1.5. Because both the adhesive body and the curing agent have the long-chain structures of dimer acid, mutual permeation between an organic interface and an inorganic interface can be improved through a coupling agent, and combined strength is improved. A colloid obtained after the main adhesive body of the long-chain structure and the curing agent of the long-chain structure are mixed is softer and higher in cohesion, an adhesive layer formed by compositing the colloid and a polyester film is high in bonding strength and good in softness, the bonding force between an aluminum-plated layer and the polyurethane adhesive layer is similar to that between an external plastic base material and the aluminum-plated layer, the factors which can easily cause stripping of the aluminum-plated layer from the external plastic base material are eliminated, the phenomenon that an aluminum-plated layer shifts can be eliminated, bonding strength is improved, and corrosion resistance is better.
Owner:JIANGSU LIHE ADHESIVE

Preparation method of photoinduction nano alternative-current power generator based on zinc oxide/ polyaniline/zinc oxide

The invention discloses a preparation method of an N-P-N-type photoinduction nano alternative-current power generator based on zinc oxide (ZnO)/polyaniline (PANI)/zinc oxide (ZnO). An N-type ZnO nano rod is synthesized in a method that a seed is firstly grown on an Indium Tin Oxide (ITO) substrate and then hydro-thermal reaction is executed, and a P-type PANI nano fiber is synthesized through an inorganic/organic interface method. In the nano alternative-current power generator device, a great amount of electron-hole pairs are produced inside a photosensitive ZnO nano rod after being radiated by ultravoilet ray, the hole is immediately combined with oxygen ions on the surface of the ZnO to generate the oxygen so as to consume a great amount of holes, and the surplus electrons can directionally move along a conducting wire to form current. Therefore, under the situation that no external voltage is applied, the parts containing ZnO at two sides of the device are respectively radiated by the ultravoilet ray, so the alternative-current power in an opposite direction can be generated. A P-N heterojunction plays an important role in controlling the movement direction of the photo-generated electrons in the ZnO/PANI/ZnO device. Due to the adoption of the method, the optical energy can be converted to the electric power.
Owner:NORTHEAST NORMAL UNIVERSITY

Directional grown mesoporous adsorption material with controllable structure and preparation method thereof

The invention relates to a directional grown mesoporous adsorption material with a controllable structure and a preparation method thereof, and belongs to the technical field of porous adsorption materials. The adsorption material has an alumina-silica composite structure and is assembled by an inorganic-organic interface in an alumina hole, and the mesoporous structure is formed in a directional growing mode along the axial direction of an alumina array hole; and the mesoporous structure of a silica phase can be controlled as a regular and ordered two-dimensional or three-dimensional structure, and the pore canal growing direction and the aperture size of the mesoporous structure are modulated by adjusting and controlling a mixture ratio of a self-assembling system and assembling conditions. The adsorption material has the advantages that the adsorption material has an integral composite structure and is convenient to apply; the pore structure is regular and ordered, the size distribution is even, and the capillary condensation is quick; the porosity is high and the adsorbing capacity is large; and the surface property is adjustable, and the adsorption material is applicable to adsorption substances with different polarities. The adsorption material can be widely applied to quick high-capacity storage of liquid gas or gas solution.
Owner:BEIJING UNIV OF CHEM TECH

Special high-surface-tension PC/ABS material for in-mold transfer printing and preparation method thereof

The invention discloses a special high-surface-tension PC/ABS material for in-mold transfer printing. A coupling agent adopts a phthalic ester coupling agent, the phthalic ester coupling agent is subjected to blending modification with ABS resin and PC resin which are prepared by a bulk process, alkoxy in the phthalic ester coupling agent has reactivity to inorganic matters to form a unique monomolecular film, and long carbon chain alkane in the phthalic ester coupling agent is bent and entangled with an organic polymer; therefore, when the phthalic ester coupling agent is between an inorganic interface and an organic interface, an organic matrix-phthalic ester coupling agent-inorganic matrix bonding layer can be formed, so that the effect of greatly improving the surface tension of the material is achieved; meanwhile, the phthalic ester coupling agent is used as a coordination type phthalic ester coupling agent, so that the situation that the viscosity of a system is increased due to transesterification of PC resin can be effectively prevented; in addition, the phthalic ester coupling agent can also effectively improve the dispersibility of the pigment and improve the color brightness of the product, and is beneficial to industrial production and application.
Owner:NANJING JULONG SCI&TECH CO LTD +1

Organic photoelectric device based on metal-induced organic interface layer and preparation method

The invention discloses an organic photoelectric device based on a metal-induced organic interface layer and a preparation method. According to the metal induced organic interface layer, a metal thin layer is pre-evaporated on the surface of a conductive electrode to serve as an induction layer, an organic material (such as PFN-Br) containing amino groups or other polar groups is spin-coated at room temperature, an induced dipole is generated through interaction between metal and the organic material, and a multifunctional composite interface is prepared. The method is applied to preparation of organic photoelectric devices such as organic solar cells and organic photoelectric detectors by a solution method. As a typical example, Ag / PFN-Br is adopted as a cathode interface modification layer to be applied to the organic photoelectric device, and strong chemical adsorption arrangement is formed on the surface of an electrode by the PFN-Br through the induction effect of Ag, so that a strong interface dipole is formed to regulate and control the surface potential of the electrode, the charge transfer barrier between an active layer and the electrode is reduced, and the performance of the organic photoelectric device is improved. And finally, high-efficiency and stable preparation of the organic photoelectric device is realized.
Owner:SOUTH CHINA UNIV OF TECH

Modified ferrochromium slag for flame-retarding reinforced rubber filler

InactiveCN109233037AProne to reunionHigh value-added recyclingOXALIC ACID DIHYDRATEPolymer science
The invention discloses modified ferrochromium slag for flame-retarding reinforced rubber filler and belongs to the field of cyclic utilization of resources. The modified ferrochromium slag comprisesan oxalic acid dihydrate solution, a silane coupling agent KH560, acetone and ferrochromium slag, wherein the mass percent of the oxalic acid dihydrate solution is 80 to 95 percent; the grain diameterof the ferrochromium slag is 4.2 to 113.8mum; the silane coupling agent KH560 is industrially pure; the acetone is analytically pure. By adopting the modified ferrochromium slag, the problems of an existing rubber industry that the price of main filler including carbon black and white carbon black is relatively high and the performance is single, the main filler only has reinforcing performance,the ferrochromium slag is directly added into rubber and is easy to agglomerate, and the compatibility between a ferrochromium slag inorganic interface and a rubber organic interface is relatively poor are solved; high-additional-value cyclic utilization of industrial waste mateirals is realized, the increasing of benefits of metallurgical enterprises is promoted and the reduction of the cost of arubber product industry are promoted; current industrial development requirements on energy saving and environment protection and cyclic economy are met.
Owner:ANHUI UNIVERSITY OF TECHNOLOGY

Conductive polymer based bionic memristor and preparation method thereof

The invention discloses a conductive polymer-based bionic memristor and a preparation method thereof, a polymer memristor structure composed of an ion-rich semiconductor layer and an ion collection conductive layer is constructed by introducing an organic-inorganic hybrid interface of PEDOT: PSS / AlOx or a PEDOT: PSS / Pentacene organic-organic interface, the switching power consumption and stability of the organic memristor are improved, and the performance of the memristor is improved. The biologic synaptic response is realized. According to the memristor structure, a bottom electrode indium tin oxide (ITO), a PEDOT: PSS organic functional layer subjected to low-temperature annealing, an inorganic resistive layer non-stoichiometric ratio AlOx or an organic resistive layer pentacene Pentacene and a top electrode metal Al are sequentially arranged from bottom to top, and the memristor device with the structure of ITO / PEDOT: PSS / AlOx / Al or the structure of ITO / PEDOT: PSS / Pentacene / Al is formed. The method is used for realizing multi-stage switching characteristics and improving switching power consumption (1.2 mu w), can be applied to synaptic plasticity function simulation, and provides possibility for low-power-consumption application scenes and neuromorphic calculation.
Owner:NANJING UNIV OF POSTS & TELECOMM
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