The invention discloses an isomorphic
bismuth oxide cluster material as well as a preparation method and application thereof.
Bismuth atoms have a relatively high EUV
absorption cross section, and the
bismuth atom type
photoresist is low in
toxicity, low in environmental
pollution and beneficial to green and environment-friendly production and
processing. According to the method for preparing the
bismuth oxygen cluster, a bismuth source and
carboxylic acid ligands are synthesized into the bismuth
oxygen cluster through an ultrasonic standing method or a heating and stirring method by controlling mixing conditions. According to the synthesis method of the bismuth
oxygen cluster, the bismuth oxygen
metal oxygen cluster containing various carboxylic acids can be synthesized. The bismuth
oxide cluster structure has the size of about 2nm and uniform distribution, and can effectively improve the resolution of the bismuth
oxide cluster
photoresist. Besides, by carrying out structural regulation and control on the bismuth source and the
carboxylic acid ligand, the photoetching performance of the material can be optimized, an electrophilic or
electron donating group can be introduced, and the dissolving property of the patterned material can be regulated, so that the film thickness, the film roughness, the resolution ratio, the film adhesion and the
etching resistance are influenced.