Conductive polymer based bionic memristor and preparation method thereof

Abstract

The invention discloses a conductive polymer-based bionic memristor and a preparation method thereof, a polymer memristor structure composed of an ion-rich semiconductor layer and an ion collection conductive layer is constructed by introducing an organic-inorganic hybrid interface of PEDOT: PSS / AlOx or a PEDOT: PSS / Pentacene organic-organic interface, the switching power consumption and stability of the organic memristor are improved, and the performance of the memristor is improved. The biologic synaptic response is realized. According to the memristor structure, a bottom electrode indium tin oxide (ITO), a PEDOT: PSS organic functional layer subjected to low-temperature annealing, an inorganic resistive layer non-stoichiometric ratio AlOx or an organic resistive layer pentacene Pentacene and a top electrode metal Al are sequentially arranged from bottom to top, and the memristor device with the structure of ITO / PEDOT: PSS / AlOx / Al or the structure of ITO / PEDOT: PSS / Pentacene / Al is formed. The method is used for realizing multi-stage switching characteristics and improving switching power consumption (1.2 mu w), can be applied to synaptic plasticity function simulation, and provides possibility for low-power-consumption application scenes and neuromorphic calculation.

Description

technical field [0001] The invention belongs to the field of semiconductor technology and neuromorphic hardware, and in particular relates to a conductive polymer-based bionic memristor and a preparation method thereof. Background technique [0002] At present, the research on using memristors to realize synaptic functions and fabricate neuromorphic device systems to realize brain-inspired computing has attracted much attention from academia and industry. The current memristive devices based on metal oxides greatly reduce the uniformity of the devices due to the randomness of the formation of conductive filaments during the resistive switching process. At the same time, the accompanying high turn-on voltage makes it difficult to achieve high efficiency and low power consumption of the human brain. run. Therefore, how to seek a new direction of development has become the focus of people's attention. [0003] In recent years, organic memristors based on organic materials hav...

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Problems solved by technology

However, there are few studies on the resistance gradient characteristics of this material at present. Although there are already implementation methods for PEDOT:PSS gradient characteristics (Materials in Electronics, 2019, 30, 4607-4617), its power consumption level is still relatively low. high

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