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Manufacturing method of ultrathin thermal reaction substrate-free film

A production method and substrate-free technology, which is applied in the field of ultra-thin heat-reactive non-substrate film production, can solve the problems of poor corrosion resistance and corrosion resistance of graphene, achieve high barrier interpenetrating ability, improve The effect of corrosion resistance

Pending Publication Date: 2022-07-08
曹上飞
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to enhance the conductivity of the existing film, silver material is added to it to improve the conductivity, but the corrosion resistance is deteriorated. Based on this, the present invention improves it and provides a method for manufacturing an ultra-thin heat-responsive non-substrate film
[0004] Chinese patent document CN114068109A discloses a kind of preparation method of graphene transparent conductive film, and this method comprises the following steps in turn: step 1, film substrate is soaked in the graphene conductive ink; Some graphene spinning fibers are formed on the surface of both sides of the material; step 3, the film substrate is hung and dried, and at least part of the graphene spinning fibers are distributed laterally when hanging; although the conductive film provided in this document has conductive properties, But the corrosion resistance of graphene becomes worse, based on this, the present invention further improves it

Method used

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  • Manufacturing method of ultrathin thermal reaction substrate-free film

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preparation example Construction

[0038] The preparation method of the conductive modifier in this embodiment is:

[0039] S1: Preparation of porous carbon nanotubes: The carbon nanotubes are put into a hydrochloric acid solution with a mass fraction of 5-10% for 10-20 minutes, and the soaking temperature is 55-65 °C. After the soaking, add 1-5% mass fraction of The ferric chloride solution was ultrasonically dispersed for 20-30min, the ultrasonic power was 100-300W, the ultrasonic wave was terminated, washed with water, and dried to obtain porous carbon nanotubes;

[0040] S2: mix sodium alginate and ethanol according to a weight ratio of 1:5, then add polyethylene glycol with a total amount of 5-7% ethanol, and stir until sufficient to obtain a dispersant;

[0041] S3: The conductive silver fibers and the porous carbon nanotubes are mixed according to a weight ratio of 1:5, and then sent to a dispersant for dispersion. After the dispersion is completed, washed with water and dried to obtain a conductive modi...

Embodiment 1

[0052] A method for making an ultra-thin thermal reaction substrate-free film of the present embodiment includes the following steps:

[0053] Step 1, mix the conductive modifier, epoxy resin and acetone according to the weight ratio of 1:5:9, then add 1% of the total epoxy resin chitosan, stir at a speed of 100r / min for 20min, and the stirring is completed, The stirring temperature is 55°C, and the stirring is completed to obtain the base-free main agent;

[0054] Step 2, adding 5% formaldehyde modified body to the base material-free main agent, stirring at a rotational speed of 100r / min for 30min, and finishing the stirring to obtain an improved material;

[0055] Step 3, then add 1% organic modified interface agent to the modified material, rotate speed 200r / min, stir for 1h, stirring temperature is 75 ℃, and then carry out proton irradiation treatment, irradiation power is 100W, irradiation The time is 3min to obtain the coating material;

[0056] In step 4, the coating ...

Embodiment 2

[0071] A method for making an ultra-thin thermal reaction substrate-free film of the present embodiment includes the following steps:

[0072] Step 1: Mix the conductive modifier, epoxy resin and acetone according to the weight ratio of 1:5:9, then add chitosan containing 5% of the total epoxy resin, and stir at a speed of 500r / min for 30min, and the stirring is completed. The stirring temperature was 75°C, and the stirring was completed to obtain a base-free main agent;

[0073] Step 2, adding 10% formaldehyde modified body to the base material-free main agent, stirring for 40 minutes at a rotational speed of 300r / min, and finishing the stirring to obtain an improved material;

[0074] Step 3, then add 5% organic modified interface agent to the modified material, rotate speed 500r / min, stir for 2h, stirring temperature is 85 ℃, then carry out proton irradiation treatment, irradiation power is 500W, irradiation The time is 5min to obtain the coating material;

[0075] In ste...

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Abstract

The invention discloses a manufacturing method of an ultrathin thermal reaction base-material-free film, which comprises the following steps: step 1, mixing a conductive modifier, epoxy resin and acetone according to a weight ratio of 1: 5: 9, then adding chitosan accounting for 1-5% of the total amount of the epoxy resin, stirring for 20-30 minutes at a rotating speed of 100-500r / min, finishing stirring at a stirring temperature of 55-75 DEG C, and finishing stirring to obtain a base-material-free main agent; and adding 5-10% of formaldehyde modifier into the base-material-free main agent, and stirring at the rotating speed of 100-300r / min for 30-40 minutes to obtain the improved material after stirring is finished. The silane coupling agent is used as an organic interface agent, rare earth lanthanum chloride with the mass fraction of 5% is used as a rare earth auxiliary agent, the raw materials are reacted and mixed, the product is organically modified better, and the prepared product has excellent corrosion resistance and conductivity through matching of the raw materials of the product and preparation of the product.

Description

technical field [0001] The invention relates to the technical field of substrate-free films, in particular to a method for making an ultra-thin thermal reaction substrate-free film. Background technique [0002] The conductive film in the substrate-free film is a thin film with a conductive function. The charged carriers of the conductive film are scattered by the surface and the interface during the transport process. When the thickness of the film can be compared with the free path of electrons, the influence on the surface and the interface will become significant. This phenomenon is called thin film. size effect. It is equivalent to the reduction of the free path of the carriers, and thus the conductivity of the film is smaller compared to the bulk of the same material. [0003] In order to enhance the electrical conductivity of the existing film, silver material is added to it to improve electrical conductivity, but the corrosion resistance becomes poor. Based on this...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08J5/18C08L63/00C08L5/08C08K9/02C08K3/04C08K7/06C08K9/04C08K9/06C08K3/16
CPCC08J5/18C08K2201/001C08K2201/011C08J2363/00C08J2405/08C08K9/02C08K3/041C08K7/06C08K3/042C08K9/04C08K9/06C08K9/08
Inventor 不公告发明人
Owner 曹上飞
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