39results about How to "Increase storage window" patented technology

The present invention involves a double -layer floating grid flexible organic storage device and its preparation methods. The invention is mainly based on substrate, medium layer, control grid, blocking layer, first floating grid layer, isolation layer, second floating grid layer, tunnel, tunnel, tunnel, tunnel, tunnelThe wearing layer, organic semiconductor layer, source electrode and leakage electrode composition, where the source electrode and leakage electrode are located on the tunnel through the tunnel layer.The use of double -layer gold nano crystals as the floating grille layer will help improve the storage window of the storage device and increase the working voltage range; use femtosecond laser restoration technology to reduce repeated sedimentary electrodes in the middle, simplify the production process, reduce production, and reduce production.The doping of pollution in China is conducive to improving product yields; the blocking layers, quarantine layers, and then wearing layers used in the present invention are all graphene with high -agency constants, which can effectively reduce the leakage current and improve the stability of the memory.It can reduce the working voltage; the materials used in the present invention are flexible, can be bent, and can be applied to a flexible circuit.The femtosecond laser restoration technology, vacuum thermal evaporation and rotation technology used in the preparation process of the present invention, mature process, low production costs, can achieve large -scale production.

The invention discloses an all-inorganic perovskite resistive variable memory and a preparation method thereof. The memory structure includes a bottom electrode, a resistive layer and a top electrode from bottom to top. ITO as bottom electrode, CsPbBr 3 The thin film is used as the resistive switch layer, and metal Pt, or Au, or W is used as the top electrode. The preparation step is to CsPbBr 3 The powder was dissolved in DMSO solution to prepare the precursor solution, and the precursor solution was spin-coated on the ITO bottom electrode with a spin coater, and then toluene was added dropwise as an anti-solvent to rapidly crystallize the perovskite layer, and annealed at 100-150°C for 10 ~30min, obtain dense CsPbBr 3 polycrystalline film. Then in CsPbBr 3 A top electrode is deposited on the surface of the film. The resistance switch layer of the memory is made of all inorganic materials, the preparation process is simple, and the cost is low. By changing the heating temperature and heating time, the device exhibits excellent resistance change characteristics and air thermal stability.

The invention relates to a multiple-valued non-volatile memory and a preparation method thereof. The memory comprises a semiconductor substrate, wherein both ends of the semiconductor substrate include a source electrode and a drain electrode respectively along the direction of a memory bit line and both ends of the semiconductor substrate include a shallow tunnel isolation structure respectively along the direction of a memory sub-line. A tunneling dielectric layer, a charge storage layer, a charge blocking layer, and a gate electrode are sequentially arranged on the semiconductor substrate, wherein the charge storage layer is a combination of two different storage materials which are alternatively arranged along the direction of the memory sub-line. The multiple-valued non-volatile memory of the invention adopts the storage layer formed by alternatively arranging the two different materials, which increases the storage density, promises a large window while reducing the thickness of a gate dielectric layer greatly,. Therefore, multiple-valued storage and high-density storage are realized the cost is reduced in turn.