5results about How to "Increase storage window" patented technology

This invention discloses a method for fabricating an indium selenide (InSe) memristor based on In / Au electrodes, belonging to the field of semiconductor devices. The method for fabricating an InSe memristor with Indium gold electrodes according to this invention includes the following steps: first, using mechanical lift-off technology to obtain few-layer InSe and h-BN thin films respectively; then, using dry transfer technology to transfer the h-BN thin film to a clean substrate surface; next, using a transfer platform to transfer the few-layer InSe directly above the h-BN; finally, evaporating the electrode to obtain the InSe memristor. The fabrication method of this invention is simple, and the fabricated photodetector has advantages such as a large storage window, good stability, and long durability.

The invention provides a storage circuit and a control method thereof, a memory and electronic equipment, and relates to the technical field of storage, and a ferroelectric capacitor can be fully overturned. The memory circuit includes a first ferroelectric memory cell, a first current mirror, a first voltage generating circuit, a comparison circuit, and a first voltage terminal. The first current mirror comprises a first branch circuit and a second branch circuit, one end of the first branch circuit and one end of the second branch circuit are electrically connected to a first voltage end, and the first branch circuit and the second branch circuit have the same current. The output end of the first ferroelectric storage unit and the other end of the first branch are electrically connected to a first node, the other end of the second branch is electrically connected to the output end of the first voltage generation circuit, the input end of the comparison circuit is electrically connected to a second node, and the output end of the comparison circuit is electrically connected to the output end of the storage circuit.

This application provides a three-dimensional ferroelectric memory and its fabrication method. A substrate has a source layer and a stacked layer, with a channel hole extending to the source layer formed in the stacked layer. A charge trapping potential structure layer, a ferroelectric layer, and a second dielectric layer are sequentially formed within the channel hole. The charge trapping potential structure layer includes a trapping layer. A channel layer and a third dielectric layer are sequentially formed within the channel hole. The channel layer is in contact with the source layer. A sacrificial layer is removed and filled with a metal gate material to form a metal gate layer. Source holes, gate holes, and drain holes are formed by etching. The source holes extend to the source layer, the gate holes extend to each metal gate layer, and the drain holes extend to the channel layer. The defect energy levels in the trapping layer are sufficiently deep, requiring a large energy level for electrons to escape from the trapping layer (i.e., the energy from the defect energy level to the conduction band). This makes it difficult for electrons to escape, and the electrons in the trapping layer can promote ferroelectric polarization, thereby increasing the storage window and improving the storage characteristics of the three-dimensional ferroelectric memory device.

The invention discloses a digital memristor based on an amorphous hafnium oxide / yttrium oxide double-layer structure and a preparation method and application thereof, and belongs to the technical field of nonvolatile resistive random access memories. A first conductive film is deposited on the high-flatness substrate in a physical vapor deposition mode to serve as a bottom conductive electrode; a target material containing yttrium and hafnium elements is adopted, an amorphous yttrium oxide film and an amorphous hafnium oxide film are sequentially deposited on the bottom conductive electrode, and an amorphous yttrium oxide / hafnium oxide double-layer structure is obtained and serves as a functional layer; and continuously depositing a second conductive film on the functional layer by adopting the mask plate to serve as an upper conductive electrode, thereby obtaining the digital memristor based on the amorphous yttrium oxide / hafnium oxide double-layer structure. The structure construction and preparation process is simple, and the material cost is low; meanwhile, by controlling the cut-off voltage and the limiting current, the multi-level storage capacity is shown, the potential advantage of high storage density is achieved while a high storage window is shown, and the good market application prospect is achieved.

The invention belongs to the technical field of nano electronic devices and nano processing, and particularly relates to a nanocrystalline floating gate memory based on a silicon dioxide coated metal core-shell nanoparticle film and a printing preparation method. The preparation method comprises the following steps: firstly printing a core-shell nanoparticle film, performing chemical vapor deposition on a silane coupling agent modification layer on a single-layer film, and printing a polymer middle layer and an oriented active layer; the printing preparation technology has the advantages of being high in raw material utilization rate, good in controllability, high in repeatability and the like. The prepared core-shell nanoparticle film is low in roughness and high in particle number density, and can be used as a nanocrystalline floating gate / tunneling dielectric composite layer; the prepared organic semiconductor crystal has the advantages of high crystallinity, obvious orientation and low grain boundary density, and can be used as an active layer, and the nanocrystalline floating gate memory formed by the functional layers shows excellent electrical properties.