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A double-layer floating gate flexible organic memory device and its preparation method

An organic memory device and floating gate technology, which is applied in the manufacturing of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., can solve problems such as the decline of device storage reliability, and achieve low leakage current, mature technology, and good mechanical toughness. Effect

Inactive Publication Date: 2018-06-19
CHINA JILIANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the requirements for storage density are getting higher and higher. Although the goal can be achieved by increasing the integration level, there are also some challenges. The most obvious is that the current leakage caused by the quantum tunneling effect leads to a decrease in the storage reliability of the device.

Method used

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  • A double-layer floating gate flexible organic memory device and its preparation method

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Embodiment Construction

[0025] step 1

[0026] 1.1 Cut the PET into a 2cm×2.5cm piece, then scrub it with detergent powder, and then use acetone, ethanol, and deionized water to ultrasonically clean it in an ultrasonic cleaner for 10 minutes.

[0027] 1.2 Dry the substrate 1 under nitrogen, then put it into a vacuum drying oven with a vacuum degree of 0.09 Pa, and dry it for 2 hours.

[0028] step 2

[0029] 2.1 Weigh 15mg of purified graphene oxide powder with an electronic scale, weigh 1ml of absolute ethanol with a graduated cylinder, and mix them in a glass bottle.

[0030] 2.2 Seal the bottle and place it on a magnetic stirrer for 1 hour to prepare a 15mg / ml solution.

[0031] step 3

[0032] 3.1 Put the sheet prepared in step 1 on the suction head of the glue homogenizer, and use the liquid picker to drop the solution in step 2 on the substrate.

[0033] 3.2 Set the homogenizer at a low speed of 300 rpm for 3 seconds, and at a high speed of 1000 rpm for 60 seconds, and start to spin coat th...

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Abstract

The present invention involves a double -layer floating grid flexible organic storage device and its preparation methods. The invention is mainly based on substrate, medium layer, control grid, blocking layer, first floating grid layer, isolation layer, second floating grid layer, tunnel, tunnel, tunnel, tunnel, tunnelThe wearing layer, organic semiconductor layer, source electrode and leakage electrode composition, where the source electrode and leakage electrode are located on the tunnel through the tunnel layer.The use of double -layer gold nano crystals as the floating grille layer will help improve the storage window of the storage device and increase the working voltage range; use femtosecond laser restoration technology to reduce repeated sedimentary electrodes in the middle, simplify the production process, reduce production, and reduce production.The doping of pollution in China is conducive to improving product yields; the blocking layers, quarantine layers, and then wearing layers used in the present invention are all graphene with high -agency constants, which can effectively reduce the leakage current and improve the stability of the memory.It can reduce the working voltage; the materials used in the present invention are flexible, can be bent, and can be applied to a flexible circuit.The femtosecond laser restoration technology, vacuum thermal evaporation and rotation technology used in the preparation process of the present invention, mature process, low production costs, can achieve large -scale production.

Description

technical field [0001] The invention relates to the field of semiconductor storage devices, in particular to a double-layer floating gate flexible organic storage device and a preparation method thereof. Background technique [0002] As an important member of non-volatile memory devices, floating gate memory devices have gradually replaced other types of memory due to their high read / write speed, long storage time and service life. Memory cards, U disks, etc. are all based on floating gate storage devices. However, the requirements for storage density are getting higher and higher. Although the goal can be achieved by increasing the integration level, there are also some challenges. The most obvious is that the current leakage caused by the quantum tunneling effect leads to a decrease in the storage reliability of the device. In order to solve the problems encountered, the current main development direction is to replace silicon-based semiconductor materials with organic ma...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/05H01L51/30H01L51/40
CPCH10K85/111H10K10/00H10K10/46
Inventor 唐莹马力超彭应全韦一
Owner CHINA JILIANG UNIV
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