Ferromagnetic random access memory, writing method thereof, reading method thereof and preparation method thereof

Abstract

The invention discloses a ferromagnetic random access memory, a writing method thereof, a reading method thereof and a preparation method thereof. The iron resistance variable memory includes a substrate layer, a bottom electrode, a switch layer and a top electrode which are successively stacked. The switch layer includes a ferroelectric layer and at least one semiconductor layer disposed adjacentto the ferroelectric layer. The ferroelectric layer is polarized under the effect of an electric field and is configured to change the potential barrier of the switch layer. By adding at least one semiconductor layer to the switch layer and disposing the semiconductor layer adjacent to the ferroelectric layer, a variable barrier layer is provided so as to increase the resistance ratio of the highand low resistance states of the switch layer under the effect of the electric field, that is, the storage window of the ferromagnetic random access memory is increased. Thus, the high-density storage of the ferromagnetic random access memory is realized, and the small storage window of the ferromagnetic random access memory is solved.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors and storage devices, and in particular to a ferro-resistive variable memory, a writing method, a reading method, and a manufacturing method thereof. Background technique [0002] Ferroelectric materials have two stable polarization states, and the ferroelectric switching rate is very fast under the action of an external electric field. Especially with the development of modern thin film technology, ferroelectric materials have been widely studied and applied. Ferromagnetic Random Access Memory (FRAM or FeRAM for short) is the earliest commercialized non-volatile memory, which mainly uses the two polarization states of ferroelectric materials to flip under the action of an applied electric field to encode the values ​​in Boolean algebra respectively. 0 and 1, to achieve information storage. [0003] The typical structure of FRAM at this stage is: top electrode-ferroelectric mate...

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Problems solved by technology

[0004] The invention provides a ferro-resistance variable memory and its writing method, reading method and preparation method, which increase the resistance ratio of the high and low resistance states of the switch layer under the action of an electric field, increase the storage window of the ferro-resistance variable memory, and solve the problem of Solve the problem of small storage window and low storage density of ferro-resistive variable memory at the present stage

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