32results about How to "Achieve High Density Storage" patented technology

The invention discloses a 4U high-density storage server, and belongs to a server. The 4U high-density storage server structurally comprises a case, a power module, a main board, a fan region and a storage device region, wherein the power module, the main board, the fan region and the storage device region are arranged in the case, four storage nodes which can be plugged in a thermal mode serve as the storage device region, the storage nodes are communicated with the main board through an expanded controller and transmission cables, and each storage node is provided with twelve 3.5-inch hard disks which can be plugged in a thermal mode. Compared with the prior art, the 4U high-density storage server can support the forty-eight 3.5-inch hard disks and allow plugging operation to be conducted in the thermal mode, and high-density storage in the 4U server is achieved.

The invention discloses a modularized high-speed optical disc juke-box for an equipment cabinet. The modularized high-speed optical disc juke-box comprises an equipment cabinet, a server module, a mechanical hand component and a pushing-pulling framework, wherein a disc bin array is arranged along one side wall of the equipment cabinet; the disc bin array comprises a plurality of stacked disc bins, and optical disc sheet boxes are arranged in the stacked disc bins; the server module is arranged above the disc bin array in the equipment cabinet, and comprises a server and an optical disc driver set connected with the server through a data line; the mechanical hand component which is arranged towards the side opening of the disc bin array is arranged in the equipment cabinet; the mechanical hand component is used for getting out a target optical disc in the selected disc bin; the pushing-pulling framework is corresponding to the disc bin array and used for pushing and pulling one or more disc bins in the disc bin array. The modularized high-speed optical disc juke-box for the equipment cabinet disclosed by the invention adopts a modularized design and mutually independent components, and is convenient to maintain; the disc bin array, the server module and the opposite mechanical hand component are stacked, so that the optical disc storage density and the integral space utilization rate of the optical disc juke-box can be increased.

The invention relates to a novel nano composite phase-change material and a preparation method thereof. The nano composite phase-change material is characterized in that a phase-change material and a ferroelectric material are compounded, and the ferroelectric material separates the phase-change material into even nano-scale areas with controllable shapes and sizes so as to limit the phase change of the phase-change material within a small area; and simultaneously, because the ferroelectric material has good dielectric and insulating properties, the ferroelectric material enhances the dielectric property and breakdown resisting capability of the composite material, inhibits the growth of phase-change material crystals, promotes the specific resistance of the material, and increases the heat capacity of the material. The novel nano composite phase-change material applied to a memory is favorable for achieving high-density storage, improves heating efficiency during programming of a phase-change memory, reduces the power consumption of the memory, improves the storage speed, and promotes data retention capability, fatigue property, radiation resistance and the like.

This invention belongs to the field of microelectronic technology. It is a kind of method of multi-valued phase transformation memorizer. It uses semiconductor characters of phase transformation membrane material or composite material of other semiconductor material and phase transformation membrane to form semiconductor membrane transistor. It uses characters that phase transformation material can change reversibly under electricity effect to change channeling length of semiconductor membrane transistor so as to achieving storing long number in single memory cell. The membrane transistor can form spatial stereoscopic structure to increase density and do not need to occupy area of silicon substrate. Such, this invention can increase storing density greatly and solve the question of 1T1R structure phase transformation memorizer peripheral circuit occupying too large areas of silicon substrate.

The invention provides a gating tube material, a gating tube unit and a memory device structure. The gating tube material is a compound at least comprising Ge and S, the chemical general formula of the gating tube material is (GexS<1-x>)<1-y>My, M comprises a doped material, x is greater than or equal to 0.1 and less than or equal to 0.9, and y is greater than or equal to 0 and less than or equalto 0.5. The gating tube is made of a GexS<1-x> material, and the material has the advantages of large turn-on current, small leakage current, good thermal stability, simple material, no toxicity and the like when being used for a gating tube unit. According to the gating tube material, the doped material is doped into the GexS<1-x> material, so that the threshold voltage, the turn-on current, thefatigue characteristic and other properties of the gating tube unit made of the gating material can be adjusted and optimized. The thermal stability of the gating tube unit made of the gating materialcan be improved, the leakage current of the gating tube unit made of the gating material is reduced, and the repeatability of the gating tube unit made of the gating tube material is enhanced.

The invention discloses an LED panel pixel correction method and apparatus. The method comprises the following steps: receiving single-frame video data, wherein the single-frame video data is one frame of data in a video to be corrected; storing the single-frame video data to a dynamic memory; reading a correction data set and the single-frame video data from the dynamic memory, wherein the dynamic memory stores the correction data set in advance, and the correction data set comprises multiple correction arrays correcting multiple pixel points on an LED panel; and correcting the single-frame video data according to the correction data set. Through the LED panel pixel correction method and apparatus, the problem of incapability of performing pixel correction on a large-size high-density LED panel in related arts is solved.

The invention provides a memory and a writing method and a reading method thereof. The memory comprises a plurality of memory units, each storage unit comprises an MOS tube, N MTJs connected in series, a bit line, a word line and a source line. The N MTJs are arranged on the surface of the MOS tube and are sequentially arranged in an overlapped mode in the direction away from the MOS tube. In theN MTJs, the MTJ with the smallest distance from the MOS tube is a bottom end MTJ; wherein the MTJ with the largest distance from the MOS tube is the top end MTJ, one end of the bottom end MTJ is electrically connected with one of the source electrode and the drain electrode of the MOS tube, the source line is electrically connected with the other one of the source electrode and the drain electrode, one end of the top end MTJ is electrically connected with the bit line, the grid electrode of the MOS tube is electrically connected with the word line, N >=2 and N is an integer. The storage unit of the memory can store more information under the same area, and high-density storage can be realized.

The invention discloses a qualification trace calculator based on a phase change memory. The qualification trace calculator comprises a phase change memory array and a result converter. The multi-valued characteristic of the phase change memory is utilized, qualification trace data is stored in the memory units in a conductive mode, and compared with a traditional binary storage mode, the number of the memory units can be effectively reduced, and high-density storage is achieved; attenuation operation along with time is spontaneously realized by utilizing the conductance drift effect of the phase change memory, other operational circuits are not needed, and the hardware overhead of operation is effectively reduced; and storage and attenuation operation of qualification trace data are carried out in the phase change memory, so that huge energy consumption caused by frequent data carrying is avoided. In addition, by adjusting parameters in the result converter, the attenuation speed of the qualification trace can be flexibly adjusted, so that the method is suitable for reinforcement learning tasks with different requirements. The limitation of a storage wall in a traditional calculation architecture can be broken through, and further development of reinforcement learning is promoted.

The invention discloses a preparation method of a novel ferroelectric topological domain storage unit. The preparation method comprises the following steps: S1, depositing a layer of BFO (BiFeO3) thinfilm on an STO (SrTiO3) single crystal substrate in a (001) direction by adopting a pulse laser deposition method; s2, deposting a gold plating layer on the surface of the BFO thin film through a thermal evaporation method, and preparing a ferroelectric material; s3, preparing a storage unit: scraping the surface of the gold plating layer in the S2 by adopting a conductive atomic force microscope(PFM) probe, scraping off a local gold plating layer to expose a BFO region, grounding gold at the periphery of the BFO region to serve as a gold electrode, and taking the center of the BFO region asa BFO electrode to prepare the storage unit; and S4, regulation and control of the storage unit: applying a point voltage to the BFO electrode to induce the BFO region to form a central convergence domain or a central divergence domain. Compared with the prior art, the topological domain which is convenient to regulate and control and high in stability is prepared, and high-density storage can beachieved.